绝缘体上硅(SOI)
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港股异动 | 天域半导体(02658)再涨超6% 与青禾晶元达成战略合作 共同推进先进键合材料工艺开发
Zhi Tong Cai Jing· 2026-01-19 03:44
Core Viewpoint - Tianyu Semiconductor (02658) has seen a stock price increase of over 6%, currently trading at 54.65 HKD with a transaction volume of 13.8852 million HKD, following the announcement of a strategic cooperation agreement with Qinghe Crystal [1] Group 1: Strategic Cooperation - The agreement between Tianyu Semiconductor and Qinghe Crystal aims to leverage Tianyu's advantages in silicon carbide (SiC) materials and Qinghe's expertise in customized bonding equipment to jointly develop bonding materials [1] - The collaboration will focus on the development and technological iteration of bonding materials, including SiC, silicon on insulator (SOI), piezoelectric substrates on insulator (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions and optimizing production processes [1] Group 2: Market Position and Technical Capability - The cooperation is expected to enhance the group's technical capabilities in large-size composite substrates, ensuring equipment stability and further consolidating the group's market position [1]
天域半导体再涨超6% 与青禾晶元达成战略合作 共同推进先进键合材料工艺开发
Zhi Tong Cai Jing· 2026-01-19 03:38
Core Viewpoint - Tianyu Semiconductor (02658) has seen a stock increase of over 6%, currently trading at 54.65 HKD, with a transaction volume of 13.8852 million HKD, following the announcement of a strategic cooperation agreement with Qinghe Crystal [1] Group 1: Strategic Cooperation - The agreement between Tianyu Semiconductor and Qinghe Crystal aims to leverage Tianyu's advantages in silicon carbide (SiC) materials and Qinghe's expertise in bonding equipment customization and optimization [1] - The collaboration will focus on the development of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions and optimizing production processes [1] Group 2: Expected Outcomes - The cooperation is expected to improve the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]
天域半导体与青禾晶元订立战略合作协议 共同开展键合材料的工艺开发及技术迭代
Zhi Tong Cai Jing· 2026-01-16 13:24
Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal Semiconductor Technology (Group) Co., Ltd. to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment for the development of advanced bonding materials and technology iterations [1] Group 1: Strategic Cooperation - The agreement aims to establish a mutually beneficial partnership by combining Tianyu's industry strength in SiC epitaxial wafers with Qinghe's expertise in bonding integration technology and equipment [1] - The collaboration will focus on the development of bonding materials, including bonded SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] Group 2: Expected Outcomes - The partnership is expected to enhance the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]
天域半导体(02658)与青禾晶元订立战略合作协议 共同开展键合材料的工艺开发及技术迭代
智通财经网· 2026-01-16 13:23
Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal Semiconductor Technology (Group) Co., Ltd. to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment optimization for the development of advanced bonding materials [1] Group 1: Strategic Cooperation - The agreement aims to establish a mutually beneficial partnership by combining Tianyu's industry strength in SiC epitaxial wafers with Qinghe's expertise in bonding integration technology and equipment [1] - The collaboration will focus on the development and technological iteration of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] Group 2: Expected Outcomes - The partnership is expected to enhance the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]
天域半导体(02658.HK)拟携手青禾晶元共同开展键合材料(包括键合碳化硅(SiC)等工艺开发及技术迭代
Ge Long Hui· 2026-01-16 13:21
Core Viewpoint - The strategic cooperation agreement between Tianyu Semiconductor and Qinghe Crystal Semiconductor Technology aims to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment to develop advanced bonding materials and optimize production processes [1][2][3] Group 1: Cooperation Details - The cooperation will focus on process development for bonding materials including SiC, SOI, POI, and large-size (12-inch and above) SiC composite heat dissipation substrates [1] - Qinghe Crystal will provide equipment customization, optimization, and process support for various bonding substrates, including single-crystal and multi-crystal SiC [2] - The agreement includes provisions for equipment improvement and technical support, with both parties committed to enhancing manufacturing capabilities and addressing technical issues collaboratively [2] Group 2: Intellectual Property and Collaboration - Each party retains independent ownership of any intellectual property developed during the collaboration [3] - During the cooperation period, the company will prioritize collaboration with Qinghe Crystal for complete line projects and equipment procurement, unless Qinghe Crystal's equipment fails to meet specified technical or production requirements [3] - The board believes that this partnership will create a mutually beneficial relationship, enhancing the company's capabilities in large-size composite substrates and solidifying its market position [3]
环球晶圆又一12英寸硅晶圆厂启用 预计月产能10万片
Zheng Quan Shi Bao Wang· 2025-10-18 15:17
Core Insights - GlobalWafers has inaugurated its new 12-inch semiconductor wafer manufacturing plant, FAB300, in Novara, Italy, marking it as one of the most advanced 12-inch wafer facilities in Europe [1][2] - The expansion plan, announced in February 2022, involves an investment of €450 million, with €103 million in R&D subsidies from the EU and Italian government, accounting for approximately 25% of the total investment [1] - The plant aims to achieve a production capacity of 100,000 12-inch wafers per month, equating to an annual capacity of 1.2 million wafers [1] Company Developments - FAB300 will utilize cutting-edge automation and smart manufacturing technologies, focusing on high-value 12-inch polished and epitaxial wafers [2] - The project also plans to develop next-generation semiconductor materials, including Silicon-On-Insulator (SOI), Float Zone (FZ) silicon wafers, Silicon Carbide (SiC), and Gallium Nitride on Silicon (GaN on Si) [2] - GlobalWafers is significantly expanding its 12-inch wafer and compound semiconductor capacity globally, with additional facilities in Asia and the Americas [2] Industry Context - According to TrendForce, 12-inch wafers are the mainstream in the semiconductor manufacturing industry, with a market concentration of over 85% held by five major players: Shin-Etsu Chemical, SUMCO, GlobalWafers, Siltronic, and SK Siltron [3] - The supply of 12-inch wafers is expected to remain tight, prompting leading manufacturers to undertake large-scale capacity expansions, supported by government policies and funding [3] - The demand for high-quality epitaxial wafers is increasing, alongside a growing interest in SOI wafers and compound semiconductor wafers like SiC and GaN for specialized applications [3][4] Regional Insights - China is rapidly expanding its semiconductor capacity, particularly in the 12-inch wafer segment, where self-sufficiency remains low [3][4] - Domestic silicon wafer companies are striving to catch up with international leaders, supported by national funds and local government initiatives, aiming for domestic substitution [4] - The "14th Five-Year Plan" and other policies are driving the autonomy of the semiconductor supply chain in China, providing a window for local companies to accelerate their development [4]