Core Insights - The electric vehicle (EV) power electronics market is projected to grow to $42 billion by 2036, tripling in size despite a slowdown in EV sales growth [1] - The adoption of SiC MOSFETs in plug-in hybrid electric vehicles (PHEVs) is increasing, offsetting the impact of slowing growth in battery electric vehicles (BEVs) [2] - The competition among SiC wafer suppliers is driving down the total cost of SiC MOSFETs, with several companies expanding their production capacity [3] - GaN technology is gaining traction in the automotive sector, with applications in onboard chargers and traction inverters expected to grow significantly [4][5] - Hybrid inverters and embedded power modules are emerging trends that could enhance power density in power electronics [6][7] Market Trends - Despite a slowdown in BEV sales, the market penetration of electric vehicles continues to rise, indicating a robust demand for SiC MOSFETs [2] - Major OEMs like Toyota and Schaeffler are integrating SiC MOSFETs into their PHEV systems, signaling a shift towards market maturity for this technology [2] - The cost of SiC wafers, which can account for up to 50% of the total cost of SiC MOSFET chips, is decreasing due to increased competition among suppliers [3] Technology Developments - GaN technology is being applied in various automotive components, including LiDAR and onboard chargers, with significant improvements in power density [4] - The first application of GaN in an onboard charger is expected in the Chang'an Qiyuan E07 model, set to launch in 2026, showcasing a power density of 6 kW/L [4] - Companies are also developing GaN-based traction inverters, although commercial deployment is anticipated to lag behind onboard chargers [5] Future Directions - Hybrid inverters are seen as a key development for the application of wide bandgap semiconductors in electric vehicles, optimizing performance while reducing costs [7] - Embedded power modules are expected to enhance power density by integrating power semiconductor chips into printed circuit boards, although large-scale production in road vehicles is not yet realized [7]

"阅读原文" 插播： 5月15日，"电动交通&数字能源SiC技术应用及供应链升级大会"活动将在上海举办， 三菱电机、Wolfspeed、三安半导体、天科合达、元山电子、大族半导体、香港大学、 长飞先进、宏微科技、利普思、国基南方、芯长征、合盛新材料等将出席本次会议，点击文章底 部 即可报名参会。 2024年10月，特斯拉技术专家接受了国外咨询机构的调研，其深度解析了氮化镓技术在汽车领域的 应用前景与挑战，同时还对D-mode / E-mode/直驱/单片集成等技术路线以及氮化镓主流玩家进行了点 评。 "行家说三代半"对该访谈进行了全文翻译，由于整个采访多达7000字，为此这篇访谈将分拆成2篇 发布。 今天发布的是第一篇，特斯拉技术专家核心观点如下： ● GaN车载应用已成趋势： DC-DC转换器、车载充电器（OBC）将率先采用GaN方案，功率等级逐步从消费级（几十瓦）向 汽车级（几十千瓦）跃升。 高频开关是核心优势 GaN高频特性（开关频率可达100kHz以上）在OBC、DC-DC中价值显著，但在主驱逆变器 （10kHz低频场景）难敌SiC。 ● 成本潜力巨 大 ● ： 硅基GaN供应链成熟，长期成本目标接近 ...