德银认为，内存短缺、AI挤压主流组件、光电子加速渗透、先进封测升级、800V电源架构改革及边缘AI回归增长，将成为2026年欧洲科技硬件行业的六 大核心主题。DRAM与NAND价格暴涨并将持续上涨至2027年，AI需求推高测试与封测投入，数据中心光子技术加速普及，800V架构重塑功率器件格 局，边缘AI轻量化应用开启新一轮增长周期。 德银在12月10日发布的2026年欧洲科技硬件行业报告中认为，2026年科技硬件将由六大主题主导： 内存短缺、AI挤压主流组件、光电子加速渗透、先 进封测升级、800V电源架构改革及边缘AI回归增长。 市场正经历剧烈的价格波动，内存短缺已从单纯的组件风险升级为宏观层面的关切。据追风交易台消息，德银分析师Robert Sanders团队在研报中表 示， 过去三个月，DRAM现货价格暴涨300-400%，NAND闪存同步大涨200%，且涨势正向合约价快速传导。 与此同时，AI 支出持续挤占主流电子组件供应，光电子、先进封测、800V 电源架构等技术赛道加速爆发，边缘 AI 已在多个领域形成落地态势。多重 变量正重构行业竞争格局。 这些趋势将直接影响消费电子、智能手机、数据中心等关键终 ...

2025 年 12 月 5 日 招银国际环球市场 | 市场策略 | 招财日报 每日投资策略 行业及公司点评 全球市场观察 半导体行业 – 宽禁带半导体 – SiC/GaN：驱动新一轮 AI 基础设施升级 我们认为，在碳化硅（SiC）和氮化镓（GaN）的带动下，宽禁带半导体行 业正步入一个全新的、多年持续的增长阶段。汽车电动化依然是核心的长期 驱动力，但更具结构性的新需求前沿正在打开，即 AI 数据中心的电力架构重 构。 行业正从传统 54V 直流供电（DC）加速迈向 800V 高压直流（HVDC）架构， 这一转变对新一代高功率 AI 机架至关重要，而其物理和经济可行性都高度依 赖 SiC 和 GaN 的应用。这一演进正把相关材料的定位，从单纯的"性能增 强器"提升为"关键基础设施组件"，由此形成一个具备高度延续性的投资 主线。我们预计，那些具备规模优势、在 8 英寸晶圆上技术领先、拥有车规 级认证产品管线，并具备系统级解决方案能力的企业，将成为本轮趋势中的 主要受益者。 行业点评 强劲的市场增长。根据 TrendForce 数据，2024 年全球 SiC 功率器件市场规 模约 34 亿美元，同比增长 12%， ...

Core Insights - TSMC's decision to exit the GaN foundry business by July 2027 has significantly impacted ROHM, as stated by ROHM's president, who described it as a "huge blow" [2][3] - ROHM is currently in discussions with Vanguard International Semiconductor (VIS), a subsidiary of TSMC, and is exploring various options for future development, including in-house and collaborative approaches [2][3] Group 1 - TSMC's exit from the GaN foundry business is attributed to market dynamics and long-term business strategy, with increasing price pressure from Chinese GaN wafer manufacturers being a contributing factor [2] - Navitas Semiconductor announced a strategic partnership with Power Integrations following TSMC's decision, with plans for mass production of 100V products starting in the first half of 2026 [2] - ROHM plans to maintain and deepen its collaboration with partners while exploring future production structures post-2027 [3] Group 2 - ROHM's president emphasized the importance of TSMC's technology integration with their own, highlighting the ongoing discussions with VIS for 8-inch model production [3] - The company is considering various possibilities for future operations, including the potential transition of processes back in-house and seeking new partners [3]

Group 1 - The global competition in chip technology has evolved from a focus on processes to a comprehensive competition, with China reportedly leading in third-generation chip materials, significantly surpassing its Western counterparts [1] - Most existing chips are based on silicon technology, which is approaching its limits, leading major manufacturers like TSMC, Intel, and Samsung to abandon traditional upgrade paths in favor of equivalent processes [3] - The global industry is exploring new chip technologies and materials, such as photonic and quantum chips, as alternatives to silicon [3] Group 2 - China faces significant challenges in advancing silicon chip technology due to difficulties in obtaining EUV lithography machines, which involve a complex supply chain requiring collaboration from thousands of companies across multiple countries [5] - In the realm of advanced chip technology, China is considered to be in the first tier alongside the United States, particularly in photonic and quantum chip technologies, although the exact competitive advantage remains unclear until large-scale commercialization occurs [5] - Chinese companies have reportedly achieved a leading position in the global gallium nitride (GaN) materials market, which is recognized as a third-generation chip material, with widespread applications, especially in mobile phone chargers [5][7] Group 3 - Innoscience, a Chinese company, holds a 30% share of the global GaN materials market, followed by American companies Navitas, Power Integrations, and EPC with shares of 17%, 15.2%, and 13.5% respectively [7] - GaN materials are not only used in mobile phone chargers but also in emerging technology sectors such as electric vehicles and high-speed rail, contributing to rapid advancements in these fields [7] - The application of GaN materials extends to military technology, enhancing the detection range of advanced radar systems and being utilized in various defense applications [7][9] Group 4 - In addition to GaN, China has made significant progress in other advanced chip materials such as gallium arsenide (GaAs), indium phosphide (InP), and silicon carbide (SiC), supporting technological advancements across various sectors [9]

Core Insights - The adoption of Solid State Transformers (SST) is expected to drive demand for wide bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN), with SiC primarily used in input applications and GaN in output applications [1] - The global solid-state transformer market is projected to grow at a compound annual growth rate (CAGR) of 25% to 35% over the next 5-10 years, benefiting both magnetic materials and power semiconductors [1] Group 1: Industry Transformation - The power supply systems for data centers are undergoing significant changes due to the explosion of AI computing power, with power density per rack increasing from under 60 kW to 150 kW or higher [1] - Solid State Transformers (SST) offer over 98% system efficiency and require less than 50% of the space compared to traditional solutions, making them a promising core solution for next-generation data center power systems [1][2] - NVIDIA's recent release of an 800V DC white paper highlights the critical role of SST in its next-generation power architecture, indicating strong industry recognition of SST technology [1] Group 2: Technical Advantages of SST - SST improves efficiency by replacing traditional transformers with high-frequency power electronics, achieving over 98% efficiency compared to 95.1% for traditional HVDC systems [2] - The compact design of SST, utilizing high-frequency magnetic materials and modular architecture, significantly reduces the size of transformers while integrating multiple functions, thus saving space in data centers [2] Group 3: Future Potential of SST - SST acts as a "software-defined" energy router, enhancing the intelligence and resilience of power supply systems through real-time control and fault self-recovery capabilities [3] - SST's compatibility with renewable energy sources allows for direct integration of solar and wind power, improving the acceptance of renewable energy by over 50% compared to traditional systems [3] - The dual active bridge topology of SST supports bidirectional energy flow, enabling energy storage during low demand and feedback to the grid during peak times, which can reduce operational costs for data centers [3] Group 4: Companies to Watch - Companies involved in SST systems include Sifang Co., Ltd. (with SST efficiency reaching 98.5% and applications in national demonstration projects), China West Electric (with a subsidiary's 2.4MW SST operational), and Jinpan Technology (developing a 10kV/2.4MW prototype) [4] - Companies focused on SST materials include Hengdian East Magnetic (largest ferrite material company globally), Placo New Materials (new soft magnetic materials with frequencies over 10 MHz), and Yunlu Co., Ltd. (global leader in amorphous alloys) [4]

Core Insights - The semiconductor materials industry in China is at a crucial development stage, with significant growth potential and strategic importance in the global market [4][5] - The historical contributions of Henan province, particularly the establishment of the Luoyang Monocrystalline Silicon Plant in 1966, have been pivotal in the evolution of China's semiconductor materials sector [3] Industry Development History - The Luoyang Monocrystalline Silicon Plant was the first in China to introduce a complete set of technology and equipment from abroad in 1966, marking the beginning of the country's exploration into semiconductor silicon materials [3] - The plant's initial design capacity was 2.4 tons of polysilicon and 1.4 tons of monocrystalline silicon, which has evolved significantly over the decades [3] - By 2005, the Luoyang Zhongzhil High-tech Company achieved an annual production of 300 tons of polysilicon, breaking foreign technology monopolies [3] Current Industry Landscape - The global semiconductor industry is undergoing profound changes, with materials becoming increasingly strategic [4] - The semiconductor materials market is projected to reach $70 billion by 2025, with China's key electronic materials market expected to exceed 170 billion yuan, reflecting a growth of over 20% [4] - The domestic production rate of semiconductor-grade silicon materials has surpassed 50%, while the rate for polishing liquids has exceeded 30% [4] Future Development Directions - Emphasis on strengthening basic research and advanced layout in semiconductor materials, including enhancing the quality and cost competitiveness of silicon-based materials [5] - Encouragement of collaborative innovation across the industry chain, promoting synergy between materials, equipment, and processes [5] - Adoption of green and intelligent trends in material production, focusing on low-carbon transformation and utilizing AI and big data for accelerated R&D [5] - Development of a resilient talent chain to foster innovation and improve the talent cultivation system across the industry [5]

Core Insights - The electric vehicle (EV) power electronics market is projected to grow to $42 billion by 2036, tripling in size despite a slowdown in EV sales growth [1] - The adoption of SiC MOSFETs in plug-in hybrid electric vehicles (PHEVs) is increasing, offsetting the impact of slowing growth in battery electric vehicles (BEVs) [2] - The competition among SiC wafer suppliers is driving down the total cost of SiC MOSFETs, with several companies expanding their production capacity [3] - GaN technology is gaining traction in the automotive sector, with applications in onboard chargers and traction inverters expected to grow significantly [4][5] - Hybrid inverters and embedded power modules are emerging trends that could enhance power density in power electronics [6][7] Market Trends - Despite a slowdown in BEV sales, the market penetration of electric vehicles continues to rise, indicating a robust demand for SiC MOSFETs [2] - Major OEMs like Toyota and Schaeffler are integrating SiC MOSFETs into their PHEV systems, signaling a shift towards market maturity for this technology [2] - The cost of SiC wafers, which can account for up to 50% of the total cost of SiC MOSFET chips, is decreasing due to increased competition among suppliers [3] Technology Developments - GaN technology is being applied in various automotive components, including LiDAR and onboard chargers, with significant improvements in power density [4] - The first application of GaN in an onboard charger is expected in the Chang'an Qiyuan E07 model, set to launch in 2026, showcasing a power density of 6 kW/L [4] - Companies are also developing GaN-based traction inverters, although commercial deployment is anticipated to lag behind onboard chargers [5] Future Directions - Hybrid inverters are seen as a key development for the application of wide bandgap semiconductors in electric vehicles, optimizing performance while reducing costs [7] - Embedded power modules are expected to enhance power density by integrating power semiconductor chips into printed circuit boards, although large-scale production in road vehicles is not yet realized [7]

Core Insights - The electronic circuit and semiconductor industry is at a critical juncture driven by explosive growth in AI large models and global supply chain restructuring, with a 30-fold increase in computing core numbers over the past decade, while memory bandwidth growth is less than 1/5, leading to storage bottlenecks and material iteration challenges [1] Group 1: Storage Technology Breakthrough - Storage is viewed as the "reservoir" of AI computing power, with breakthroughs in technology directly impacting the efficiency of power release [3] - The forum will focus on three major technological directions: traditional storage upgrades, emerging storage implementations, and RV technology integration [3] Group 2: Material Innovation - Material innovation is the underlying logic for upgrading the semiconductor industry, with the forum addressing core material breakthroughs [4] - Key topics include advancements in AMB copper-clad ceramic substrates, third-generation semiconductors like SiC and GaN, and PCB material breakthroughs to meet high-density demands [5] Group 3: Digital Transformation and Intelligent Manufacturing - The forum will explore the application of AI technology across the entire PCB design, production, and testing process, enhancing defect recognition and production efficiency [5] - Discussions will include AI-based dynamic adjustments of key process parameters and the design logic of AI scheduling systems for flexible manufacturing [5] Group 4: Advanced Packaging and EDA Tools - Advanced packaging and EDA tools are becoming critical for breakthroughs in computing power, with a focus on system-level packaging (SiP) and Chiplet technology integration [7] - The forum will analyze the collaborative mechanisms between academia, research institutions, and enterprises to accelerate the industrialization of innovative results [11] Group 5: Forum Details - The "AI-Driven, Smart Chain Future: 2025 Electronic Circuit and Semiconductor Industry Innovation Forum" will take place on October 28, 2025, at the Shenzhen International Convention and Exhibition Center [10] - The forum will cover topics such as AI + PCB intelligent manufacturing, EDA technology breakthroughs, and the localization of AI computing chips [10]

Core Insights - The article discusses the growing importance of Gallium Nitride (GaN) and Silicon Carbide (SiC) as third-generation semiconductor materials, particularly in the context of AI data centers, where they are creating new market opportunities [1][30]. - The rise of AI is significantly increasing power demands in data centers, necessitating upgrades in power supply systems to accommodate higher efficiency and power density [3][30]. Group 1: AI Data Center Power Challenges - The power consumption of AI data centers is projected to reach 7% of global energy consumption by 2030, equivalent to India's current energy usage [3]. - Traditional silicon-based devices have reached their performance limits, making wide bandgap semiconductors like SiC and GaN essential for meeting the demands of higher voltage, faster switching frequencies, and greater power density [3][30]. Group 2: Technical Advantages of SiC and GaN - SiC offers lower conduction resistance and stable temperature characteristics, making it suitable for high-voltage and high-temperature applications, particularly in AC-DC conversion [5]. - GaN achieves low switching losses and high switching frequencies, making it ideal for high-density applications in DC-DC conversion [5][30]. Group 3: Industry Leaders and Competitive Landscape - Infineon is positioned as a leader in power semiconductors, launching products like the CoolSiC™ MOSFET 400V series, which enhances power density and efficiency for AI server power supplies [7][8]. - Navitas Semiconductor combines SiC and GaN technologies to create high-power density solutions, recently introducing a 4.5kW AI data center server power solution with a power density of 137W/in³ and efficiency exceeding 97% [9]. - ON Semiconductor focuses on high output power, conversion efficiency, and power density, offering innovative solutions that balance small packaging with high performance [10]. Group 4: NVIDIA's Role in Driving Change - NVIDIA is seen as a key player in pushing the adoption of third-generation semiconductors, advocating for an 800V high-voltage direct current (HVDC) infrastructure in data centers [14][15]. - The shift to an 800V architecture is expected to create significant demand for new power devices and semiconductors, with NVIDIA's plans for future GPU and CPU deployments driving this transformation [15][16]. Group 5: Market Outlook - The market for GaN is expected to grow faster than SiC in AI data centers, driven by the demand for high-voltage applications and the advantages of GaN in high-frequency, low-loss scenarios [20][30]. - The article anticipates a golden era for third-generation semiconductors in AI data centers, contributing to technological advancements and more efficient infrastructure [30].

Core Insights - The International Semiconductor Executive Summit (I.S.E.S. China 2025) held in Shanghai gathered global semiconductor leaders and Chinese industry elites to discuss the future of the semiconductor industry and foster collaboration [1][2]. Group 1: Industry Trends and Challenges - The summit emphasized the importance of building a global communication bridge in the semiconductor industry, especially amidst complex geopolitical challenges [2][4]. - The rise of China's semiconductor equipment industry was highlighted, showcasing local achievements and future goals [6]. - The global semiconductor industry faces fragmentation risks due to geopolitical tensions, which could lead to increased costs and challenges in maintaining a cooperative global supply chain [7]. Group 2: Opportunities in AI and Market Expansion - AI's rapid adoption presents both opportunities and challenges for China, which could become a significant player in the AI field, despite current dependencies on U.S. technology [7]. - The summit discussed the potential for Chinese semiconductor companies to expand into the Middle East markets, which are characterized by ample funding and strong development intentions [4]. Group 3: Automotive Semiconductor Innovations - The summit featured discussions on the transformation of the automotive industry through semiconductor technology, focusing on trends in electric and intelligent vehicles [11][13]. - Bosch's advancements in silicon carbide (SiC) technology were showcased, with over 42 million SiC MOSFETs delivered to leading Chinese automakers, indicating a strong push for green energy solutions in the automotive sector [15]. - The importance of reliability and quality standards for automotive-grade chips was a key topic, with various experts discussing strategies to overcome challenges in this area [19]. Group 4: Future Directions and Innovations - The summit explored the evolution of power semiconductor technologies, including SiC and gallium nitride (GaN), and their implications for electric vehicles and industrial systems [21][22]. - The market outlook for semiconductors was optimistic, with projections indicating that the semiconductor market could reach $1 trillion by 2030, driven by innovations in GaN technology [34]. Group 5: I.S.I.G. and Industry Collaboration - I.S.I.G. aims to create a global collaboration platform for the semiconductor industry, facilitating connections among industry leaders, government agencies, and academic experts to address challenges and seize opportunities [43][44]. - The organization has gathered over 230 member companies, forming a robust ecosystem that spans the semiconductor supply chain [44].