公众号记得加星标⭐️，第一时间看推送不会错过。 来 源： 内容 编译自 eetimes 。 在2025年11月6日举行的2025财年上半年（2025年4月至9月）财务业绩发布会上，ROHM总裁东克 己表示，台积电退出氮化镓（GaN）代工业务的决定"对我们造成了巨大打击"。他提到，ROHM目前 正与台积电旗下同样提供8英寸工艺的子公司Vanguard International Semiconductor（VIS）进行洽 谈，并解释说公司仍在考虑各种方案，包括内部开发和合作开发。 台积电决定于2027年7月前退出氮化镓代工业务。该公司解释称："这一决定是基于市场动态，符合 我们的长期业务战略。"业内人士指出，来自中国氮化镓晶圆厂日益增长的价格压力是促成这一决定 的因素之一 。 继此决定之后，将生产外包给台积电的纳微半导体（Navitas Semiconductor，简称Navitas）于2025 年7月1日（美国时间）宣布与力积电建立战略合作伙伴关系。首批器件认证将于2025年第四季度完 成，100V产品的量产将于2026年上半年开始。650V产品的生产也计划在未来12至24个月内从台积电 过渡到力积电。 英飞 ...

Group 1 - The global competition in chip technology has evolved from a focus on processes to a comprehensive competition, with China reportedly leading in third-generation chip materials, significantly surpassing its Western counterparts [1] - Most existing chips are based on silicon technology, which is approaching its limits, leading major manufacturers like TSMC, Intel, and Samsung to abandon traditional upgrade paths in favor of equivalent processes [3] - The global industry is exploring new chip technologies and materials, such as photonic and quantum chips, as alternatives to silicon [3] Group 2 - China faces significant challenges in advancing silicon chip technology due to difficulties in obtaining EUV lithography machines, which involve a complex supply chain requiring collaboration from thousands of companies across multiple countries [5] - In the realm of advanced chip technology, China is considered to be in the first tier alongside the United States, particularly in photonic and quantum chip technologies, although the exact competitive advantage remains unclear until large-scale commercialization occurs [5] - Chinese companies have reportedly achieved a leading position in the global gallium nitride (GaN) materials market, which is recognized as a third-generation chip material, with widespread applications, especially in mobile phone chargers [5][7] Group 3 - Innoscience, a Chinese company, holds a 30% share of the global GaN materials market, followed by American companies Navitas, Power Integrations, and EPC with shares of 17%, 15.2%, and 13.5% respectively [7] - GaN materials are not only used in mobile phone chargers but also in emerging technology sectors such as electric vehicles and high-speed rail, contributing to rapid advancements in these fields [7] - The application of GaN materials extends to military technology, enhancing the detection range of advanced radar systems and being utilized in various defense applications [7][9] Group 4 - In addition to GaN, China has made significant progress in other advanced chip materials such as gallium arsenide (GaAs), indium phosphide (InP), and silicon carbide (SiC), supporting technological advancements across various sectors [9]

Core Insights - The adoption of Solid State Transformers (SST) is expected to drive demand for wide bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN), with SiC primarily used in input applications and GaN in output applications [1] - The global solid-state transformer market is projected to grow at a compound annual growth rate (CAGR) of 25% to 35% over the next 5-10 years, benefiting both magnetic materials and power semiconductors [1] Group 1: Industry Transformation - The power supply systems for data centers are undergoing significant changes due to the explosion of AI computing power, with power density per rack increasing from under 60 kW to 150 kW or higher [1] - Solid State Transformers (SST) offer over 98% system efficiency and require less than 50% of the space compared to traditional solutions, making them a promising core solution for next-generation data center power systems [1][2] - NVIDIA's recent release of an 800V DC white paper highlights the critical role of SST in its next-generation power architecture, indicating strong industry recognition of SST technology [1] Group 2: Technical Advantages of SST - SST improves efficiency by replacing traditional transformers with high-frequency power electronics, achieving over 98% efficiency compared to 95.1% for traditional HVDC systems [2] - The compact design of SST, utilizing high-frequency magnetic materials and modular architecture, significantly reduces the size of transformers while integrating multiple functions, thus saving space in data centers [2] Group 3: Future Potential of SST - SST acts as a "software-defined" energy router, enhancing the intelligence and resilience of power supply systems through real-time control and fault self-recovery capabilities [3] - SST's compatibility with renewable energy sources allows for direct integration of solar and wind power, improving the acceptance of renewable energy by over 50% compared to traditional systems [3] - The dual active bridge topology of SST supports bidirectional energy flow, enabling energy storage during low demand and feedback to the grid during peak times, which can reduce operational costs for data centers [3] Group 4: Companies to Watch - Companies involved in SST systems include Sifang Co., Ltd. (with SST efficiency reaching 98.5% and applications in national demonstration projects), China West Electric (with a subsidiary's 2.4MW SST operational), and Jinpan Technology (developing a 10kV/2.4MW prototype) [4] - Companies focused on SST materials include Hengdian East Magnetic (largest ferrite material company globally), Placo New Materials (new soft magnetic materials with frequencies over 10 MHz), and Yunlu Co., Ltd. (global leader in amorphous alloys) [4]

Core Insights - The semiconductor materials industry in China is at a crucial development stage, with significant growth potential and strategic importance in the global market [4][5] - The historical contributions of Henan province, particularly the establishment of the Luoyang Monocrystalline Silicon Plant in 1966, have been pivotal in the evolution of China's semiconductor materials sector [3] Industry Development History - The Luoyang Monocrystalline Silicon Plant was the first in China to introduce a complete set of technology and equipment from abroad in 1966, marking the beginning of the country's exploration into semiconductor silicon materials [3] - The plant's initial design capacity was 2.4 tons of polysilicon and 1.4 tons of monocrystalline silicon, which has evolved significantly over the decades [3] - By 2005, the Luoyang Zhongzhil High-tech Company achieved an annual production of 300 tons of polysilicon, breaking foreign technology monopolies [3] Current Industry Landscape - The global semiconductor industry is undergoing profound changes, with materials becoming increasingly strategic [4] - The semiconductor materials market is projected to reach $70 billion by 2025, with China's key electronic materials market expected to exceed 170 billion yuan, reflecting a growth of over 20% [4] - The domestic production rate of semiconductor-grade silicon materials has surpassed 50%, while the rate for polishing liquids has exceeded 30% [4] Future Development Directions - Emphasis on strengthening basic research and advanced layout in semiconductor materials, including enhancing the quality and cost competitiveness of silicon-based materials [5] - Encouragement of collaborative innovation across the industry chain, promoting synergy between materials, equipment, and processes [5] - Adoption of green and intelligent trends in material production, focusing on low-carbon transformation and utilizing AI and big data for accelerated R&D [5] - Development of a resilient talent chain to foster innovation and improve the talent cultivation system across the industry [5]

Core Insights - The electric vehicle (EV) power electronics market is projected to grow to $42 billion by 2036, tripling in size despite a slowdown in EV sales growth [1] - The adoption of SiC MOSFETs in plug-in hybrid electric vehicles (PHEVs) is increasing, offsetting the impact of slowing growth in battery electric vehicles (BEVs) [2] - The competition among SiC wafer suppliers is driving down the total cost of SiC MOSFETs, with several companies expanding their production capacity [3] - GaN technology is gaining traction in the automotive sector, with applications in onboard chargers and traction inverters expected to grow significantly [4][5] - Hybrid inverters and embedded power modules are emerging trends that could enhance power density in power electronics [6][7] Market Trends - Despite a slowdown in BEV sales, the market penetration of electric vehicles continues to rise, indicating a robust demand for SiC MOSFETs [2] - Major OEMs like Toyota and Schaeffler are integrating SiC MOSFETs into their PHEV systems, signaling a shift towards market maturity for this technology [2] - The cost of SiC wafers, which can account for up to 50% of the total cost of SiC MOSFET chips, is decreasing due to increased competition among suppliers [3] Technology Developments - GaN technology is being applied in various automotive components, including LiDAR and onboard chargers, with significant improvements in power density [4] - The first application of GaN in an onboard charger is expected in the Chang'an Qiyuan E07 model, set to launch in 2026, showcasing a power density of 6 kW/L [4] - Companies are also developing GaN-based traction inverters, although commercial deployment is anticipated to lag behind onboard chargers [5] Future Directions - Hybrid inverters are seen as a key development for the application of wide bandgap semiconductors in electric vehicles, optimizing performance while reducing costs [7] - Embedded power modules are expected to enhance power density by integrating power semiconductor chips into printed circuit boards, although large-scale production in road vehicles is not yet realized [7]

Core Insights - The electronic circuit and semiconductor industry is at a critical juncture driven by explosive growth in AI large models and global supply chain restructuring, with a 30-fold increase in computing core numbers over the past decade, while memory bandwidth growth is less than 1/5, leading to storage bottlenecks and material iteration challenges [1] Group 1: Storage Technology Breakthrough - Storage is viewed as the "reservoir" of AI computing power, with breakthroughs in technology directly impacting the efficiency of power release [3] - The forum will focus on three major technological directions: traditional storage upgrades, emerging storage implementations, and RV technology integration [3] Group 2: Material Innovation - Material innovation is the underlying logic for upgrading the semiconductor industry, with the forum addressing core material breakthroughs [4] - Key topics include advancements in AMB copper-clad ceramic substrates, third-generation semiconductors like SiC and GaN, and PCB material breakthroughs to meet high-density demands [5] Group 3: Digital Transformation and Intelligent Manufacturing - The forum will explore the application of AI technology across the entire PCB design, production, and testing process, enhancing defect recognition and production efficiency [5] - Discussions will include AI-based dynamic adjustments of key process parameters and the design logic of AI scheduling systems for flexible manufacturing [5] Group 4: Advanced Packaging and EDA Tools - Advanced packaging and EDA tools are becoming critical for breakthroughs in computing power, with a focus on system-level packaging (SiP) and Chiplet technology integration [7] - The forum will analyze the collaborative mechanisms between academia, research institutions, and enterprises to accelerate the industrialization of innovative results [11] Group 5: Forum Details - The "AI-Driven, Smart Chain Future: 2025 Electronic Circuit and Semiconductor Industry Innovation Forum" will take place on October 28, 2025, at the Shenzhen International Convention and Exhibition Center [10] - The forum will cover topics such as AI + PCB intelligent manufacturing, EDA technology breakthroughs, and the localization of AI computing chips [10]

Core Insights - The article discusses the growing importance of Gallium Nitride (GaN) and Silicon Carbide (SiC) as third-generation semiconductor materials, particularly in the context of AI data centers, where they are creating new market opportunities [1][30]. - The rise of AI is significantly increasing power demands in data centers, necessitating upgrades in power supply systems to accommodate higher efficiency and power density [3][30]. Group 1: AI Data Center Power Challenges - The power consumption of AI data centers is projected to reach 7% of global energy consumption by 2030, equivalent to India's current energy usage [3]. - Traditional silicon-based devices have reached their performance limits, making wide bandgap semiconductors like SiC and GaN essential for meeting the demands of higher voltage, faster switching frequencies, and greater power density [3][30]. Group 2: Technical Advantages of SiC and GaN - SiC offers lower conduction resistance and stable temperature characteristics, making it suitable for high-voltage and high-temperature applications, particularly in AC-DC conversion [5]. - GaN achieves low switching losses and high switching frequencies, making it ideal for high-density applications in DC-DC conversion [5][30]. Group 3: Industry Leaders and Competitive Landscape - Infineon is positioned as a leader in power semiconductors, launching products like the CoolSiC™ MOSFET 400V series, which enhances power density and efficiency for AI server power supplies [7][8]. - Navitas Semiconductor combines SiC and GaN technologies to create high-power density solutions, recently introducing a 4.5kW AI data center server power solution with a power density of 137W/in³ and efficiency exceeding 97% [9]. - ON Semiconductor focuses on high output power, conversion efficiency, and power density, offering innovative solutions that balance small packaging with high performance [10]. Group 4: NVIDIA's Role in Driving Change - NVIDIA is seen as a key player in pushing the adoption of third-generation semiconductors, advocating for an 800V high-voltage direct current (HVDC) infrastructure in data centers [14][15]. - The shift to an 800V architecture is expected to create significant demand for new power devices and semiconductors, with NVIDIA's plans for future GPU and CPU deployments driving this transformation [15][16]. Group 5: Market Outlook - The market for GaN is expected to grow faster than SiC in AI data centers, driven by the demand for high-voltage applications and the advantages of GaN in high-frequency, low-loss scenarios [20][30]. - The article anticipates a golden era for third-generation semiconductors in AI data centers, contributing to technological advancements and more efficient infrastructure [30].

Core Insights - The International Semiconductor Executive Summit (I.S.E.S. China 2025) held in Shanghai gathered global semiconductor leaders and Chinese industry elites to discuss the future of the semiconductor industry and foster collaboration [1][2]. Group 1: Industry Trends and Challenges - The summit emphasized the importance of building a global communication bridge in the semiconductor industry, especially amidst complex geopolitical challenges [2][4]. - The rise of China's semiconductor equipment industry was highlighted, showcasing local achievements and future goals [6]. - The global semiconductor industry faces fragmentation risks due to geopolitical tensions, which could lead to increased costs and challenges in maintaining a cooperative global supply chain [7]. Group 2: Opportunities in AI and Market Expansion - AI's rapid adoption presents both opportunities and challenges for China, which could become a significant player in the AI field, despite current dependencies on U.S. technology [7]. - The summit discussed the potential for Chinese semiconductor companies to expand into the Middle East markets, which are characterized by ample funding and strong development intentions [4]. Group 3: Automotive Semiconductor Innovations - The summit featured discussions on the transformation of the automotive industry through semiconductor technology, focusing on trends in electric and intelligent vehicles [11][13]. - Bosch's advancements in silicon carbide (SiC) technology were showcased, with over 42 million SiC MOSFETs delivered to leading Chinese automakers, indicating a strong push for green energy solutions in the automotive sector [15]. - The importance of reliability and quality standards for automotive-grade chips was a key topic, with various experts discussing strategies to overcome challenges in this area [19]. Group 4: Future Directions and Innovations - The summit explored the evolution of power semiconductor technologies, including SiC and gallium nitride (GaN), and their implications for electric vehicles and industrial systems [21][22]. - The market outlook for semiconductors was optimistic, with projections indicating that the semiconductor market could reach $1 trillion by 2030, driven by innovations in GaN technology [34]. Group 5: I.S.I.G. and Industry Collaboration - I.S.I.G. aims to create a global collaboration platform for the semiconductor industry, facilitating connections among industry leaders, government agencies, and academic experts to address challenges and seize opportunities [43][44]. - The organization has gathered over 230 member companies, forming a robust ecosystem that spans the semiconductor supply chain [44].

Group 1 - The "Million Talents Gather in South Guangdong" initiative aims to attract 1 million college graduates to Guangdong for employment and entrepreneurship by 2025, with the target achieved ahead of schedule by mid-July 2025 [1] - The N City Linked Autumn Recruitment event will provide over 120,000 quality job positions across more than 100 key universities nationwide, focusing on emerging industries and national strategic needs [1][4] - The Guangdong-Hong Kong-Macao Greater Bay Area is experiencing a strong demand for research talent, particularly in the fields of semiconductor technology and advanced power electronics [2][4] Group 2 - Shenzhen's new research university, Shenzhen University of Technology, is actively recruiting over 140 positions, including research assistants and young professors, with competitive salaries reaching up to 750,000 yuan [2][3] - The recruitment event targets modern industrial needs, focusing on artificial intelligence, new information technology, integrated circuits, and advanced materials [4] - Major companies such as Huawei, Tencent, and BYD participated in the recruitment event, offering numerous positions in AI, 3D printing, and low-altitude economy sectors [5][6] Group 3 - The low-altitude economy in Guangdong is projected to have a talent gap of approximately 5 million, with a significant demand for skilled professionals in drone operations and related fields [6] - The "Assist Enterprises Youth Brigade" initiative provides various support measures, including housing and education benefits, to attract and retain talent in the region [7][8] - The recruitment activities are designed to create immersive experiences for graduates, showcasing the opportunities and living conditions in Guangdong [8]

Core Viewpoint - The article discusses the shift in the semiconductor industry towards advanced materials for thermal management, particularly the adoption of 12-inch silicon carbide (SiC) substrates by TSMC, moving away from gallium nitride (GaN) [2][5]. Group 1: Thermal Management Challenges - The increasing density and power consumption of chips due to AI accelerators and high-performance computing (HPC) applications are creating significant thermal management challenges [2][3]. - Traditional ceramic substrates are becoming inadequate for the thermal flux demands of modern chip designs, necessitating a shift to more efficient materials [2][3]. Group 2: Advantages of Silicon Carbide (SiC) - SiC is recognized for its high thermal conductivity, reaching approximately 500 W/mK, which is significantly higher than common ceramic substrates like alumina or sapphire [2]. - The material's unique properties, including high mechanical strength and thermal shock resistance, make it suitable for both 2.5D and 3D packaging architectures [4][5]. - TSMC's transition to SiC is seen as a strategic move to enhance thermal management capabilities, aligning with the industry's need for efficient heat dissipation solutions [5][6]. Group 3: TSMC's Strategic Shift - TSMC plans to phase out its GaN business by 2027, reallocating resources to SiC, which is viewed as more aligned with long-term market needs for thermal management [5]. - The company aims to leverage its existing 12-inch wafer manufacturing experience to facilitate the integration of SiC, minimizing the need for new manufacturing systems [3][5]. - TSMC's focus on ensuring crystal integrity and surface flatness in SiC substrates is critical for achieving high yield rates in production [3][5]. Group 4: Competitive Landscape - Other leading companies, such as Intel, are also prioritizing thermal management as a core competitive advantage, indicating a broader industry trend [6]. - While alternatives like diamond and graphene offer high thermal conductivity, their cost and scalability issues limit their mainstream adoption, positioning SiC as a practical compromise [6].