Core Viewpoint - The article discusses the emergence of Mobile HBM (High Bandwidth Memory) technology for mobile devices, highlighting the confusion surrounding its definition and potential applications in flagship smartphones by 2027 [1][4]. Summary by Sections HBM Characteristics - HBM utilizes 3D TSV stacking and ultra-wide I/O buses, making it suitable for high-performance processors like GPUs and TPUs [2][3]. - HBM modules can achieve bandwidths of up to 1024GB/s, with HBM3 and HBM3E offering speeds of 7-8Gbps/Pin and 10Gbps/Pin respectively [3]. Misunderstanding of Mobile HBM - The term "Mobile HBM" originated from a report by ETnews, which speculated on its use in the iPhone 20 anniversary model, leading to widespread misinterpretation [4][6]. - Many media outlets misrepresented "Mobile HBM" as a low-power version of HBM, which is not accurate [6]. LLW DRAM Insights - LLW DRAM, introduced by Samsung, is a low-power DRAM aimed at terminal AI applications, achieving a bandwidth of 128GB/s with a power consumption of only 1.2pJ/bit [6]. - The Vision Pro AR/VR headset utilizes a different packaging method that achieves high bandwidth without employing HBM's TSV stacking [6]. Clarification on Packaging Technologies - VFO and VCS are new packaging technologies that are small and thin but fundamentally different from HBM, lacking the official designation of "Mobile HBM" [7]. - The term "Mobile HBM" appears to be a coined term by ETnews, not recognized by industry standards or manufacturers [7].

Core Viewpoint - Samsung Electronics is actively developing next-generation DRAM solutions to replace HBM (High Bandwidth Memory), with technologies like PIM (Processing-In-Memory) currently under standardization discussions in semiconductor organizations [1][2]. Group 1: Next-Generation DRAM Technologies - Key next-generation DRAM technologies include PIM, VCT (Vertical Channel Transistor), CXL (Compute Express Link), and LLW (Low Latency, High Bandwidth) DRAM, which are being developed for various potential customers and applications in the AI era [1][2]. - LPDDR (Low Power Double Data Rate) is currently commercialized up to LPDDR5X, with the standardization of the next generation, LPDDR6, nearing completion [2]. - PIM technology, which allows data processing capabilities within memory chips, is expected to enhance energy efficiency when combined with LPDDR [2]. - CXL is a next-generation interconnect interface designed for high-performance servers, enabling efficient connections between CPUs, GPU accelerators, DRAM, and storage devices, expanding memory bandwidth and capacity [2]. Group 2: Customization in HBM Market - The importance of "Custom HBM" in the next-generation HBM market is emphasized, with the base die of HBM4 being manufactured by foundries, allowing for product customization based on customer needs [3][4]. - This shift marks a significant transformation for Samsung's memory division, indicating a move towards tailored memory products for clients [4].