公众号记得加星标⭐️，第一时间看推送不会错过。 超高带宽 DRAM 模块技术 HBM (High Bandwidth Memory，高带宽存储器) 的移动设备版本——移 动 HBM (Mobile HBM)，近期在科技媒体中引起关注。多家来自韩国和美国的媒体在 2025 年 5 月 之后相继报道称，2027 年款的旗舰智能手机将采用这种技术（尚未得到确认）。 那么，移动 HBM 模块与传统的 HBM 模块有什么不同？本文将先对原本的 HBM 模块进行简要说 明，再揭示所谓"移动 HBM"的真相。 HBM 的特点：DRAM 的 3D TSV 堆叠与超宽 I/O 总线 HBM 模块的主要用途是作为 AI/机器学习用 GPU、TPU 等超高性能处理器的外部存储器。处理器与 多个 HBM 模块（通常为 4/6/8/12 个）被紧密集成在同一个硅中介层（Interposer）上，并封装在一 个 BGA 封装内。这样，处理器与 HBM 模块之间的数据传输速度极快，与其他 DRAM 模块相比， 可显著提升机器学习的训练和推理性能。 HBM 采用 3D 堆叠结构：底层为逻辑芯片 Base Die，其上堆叠多个 DRAM Co ...

Core Viewpoint - Samsung Electronics is actively developing next-generation DRAM solutions to replace HBM (High Bandwidth Memory), with technologies like PIM (Processing-In-Memory) currently under standardization discussions in semiconductor organizations [1][2]. Group 1: Next-Generation DRAM Technologies - Key next-generation DRAM technologies include PIM, VCT (Vertical Channel Transistor), CXL (Compute Express Link), and LLW (Low Latency, High Bandwidth) DRAM, which are being developed for various potential customers and applications in the AI era [1][2]. - LPDDR (Low Power Double Data Rate) is currently commercialized up to LPDDR5X, with the standardization of the next generation, LPDDR6, nearing completion [2]. - PIM technology, which allows data processing capabilities within memory chips, is expected to enhance energy efficiency when combined with LPDDR [2]. - CXL is a next-generation interconnect interface designed for high-performance servers, enabling efficient connections between CPUs, GPU accelerators, DRAM, and storage devices, expanding memory bandwidth and capacity [2]. Group 2: Customization in HBM Market - The importance of "Custom HBM" in the next-generation HBM market is emphasized, with the base die of HBM4 being manufactured by foundries, allowing for product customization based on customer needs [3][4]. - This shift marks a significant transformation for Samsung's memory division, indicating a move towards tailored memory products for clients [4].