RibbonFET
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台积电2nm正式量产!
国芯网· 2025-12-30 12:42
Core Viewpoint - TSMC has quietly commenced mass production of its N2 2nm process, aligning with its previously set timeline for 2025 [2][4]. Group 1: TSMC N2 Process Overview - TSMC's N2 process is the first to utilize GAA (Gate-All-Around) technology, specifically employing nanosheet transistors, marking a significant advancement in semiconductor manufacturing [4]. - The N2 process boasts a 1.15x increase in transistor density compared to the previous N3E process, with power consumption reduced by 24%-35% and performance improved by 15% [4]. - The SRAM density of the N2 process reaches a record 37.9Mb/mm², providing robust hardware support for high-performance computing and AI applications [4]. Group 2: Market Implications - Initial wafer foundry prices for the N2 process are expected to reach $30,000 per wafer, equivalent to over 200,000 RMB, indicating that only financially strong companies can afford this technology [4]. - Major clients such as NVIDIA, AMD, Apple, Qualcomm, and MediaTek are anticipated to utilize the N2 process as its production capacity ramps up [2][4].
大芯片,靠它们了
半导体行业观察· 2025-03-14 00:53
Core Viewpoint - The rapid development of artificial intelligence (AI) is pushing the limits of traditional computing technologies, necessitating sustainable and energy-efficient solutions for exponential scaling of parallel computing systems [1][2][30]. Group 1: Technological Advancements - The article emphasizes the importance of optimizing the entire system from software and system architecture to silicon and packaging to maximize performance, power consumption, and cost [2]. - Key technologies such as RibbonFET and PowerVia are highlighted for their potential to enhance performance and efficiency in semiconductor design [4][5]. - High NA EUV technology is noted for its ability to simplify electronic design automation (EDA) and improve yield and reliability [7][8]. Group 2: 3D Integration and Packaging - 3D Integrated Circuits (3DIC) are crucial for achieving higher computational power in smaller areas while reducing energy consumption [11]. - The need for advanced packaging techniques to enhance interconnect density and energy efficiency is discussed, with a focus on modular design environments [12][15]. - The integration of glass in packaging to scale interconnect geometries and improve power transmission efficiency is identified as a significant technological advancement [14]. Group 3: Power Delivery and Efficiency - The article discusses the increasing power demands for AI workloads and the limitations of traditional motherboard voltage regulators (MBVR) [21][22]. - Fully Integrated Voltage Regulators (FIVR) are proposed as a solution to improve power conversion efficiency by bringing voltage regulation closer to the chip [23][24]. - The potential of pairing high-voltage switch-capacitor voltage regulators with low-voltage integrated voltage regulators for enhanced power density and efficiency is explored [24]. Group 4: Software and Ecosystem Collaboration - Software is deemed a critical component of the innovation matrix, requiring collaboration within the open-source ecosystem to enhance security and streamline processes [25]. - The need for industry-wide collaboration to develop next-generation advanced computing systems is emphasized, ensuring alignment with market demands and sustainability [28]. Group 5: Industry Challenges and Opportunities - The article outlines the challenges faced in achieving exponential performance improvements for AI, including power, connectivity, and cost issues [30]. - It calls for innovative approaches across various domains, including process technology, 3DIC system design, and power delivery, to meet the industry's computational demands [30].