Group 1 - Morgan Stanley increased its stake in Tianyue Advanced (02631) by 197,361 shares at a price of HKD 43.6545 per share, totaling approximately HKD 8.6157 million [1] - After the increase, Morgan Stanley's total shareholding in Tianyue Advanced is approximately 2.9219 million shares, representing a holding percentage of 6.11% [1]

香港联交所最新资料显示，8月21日，大摩增持天岳先进(02631)19.7361万股，每股作价43.6545港元， 总金额约为861.57万港元。增持后最新持股数目约为292.19万股，最新持股比例为6.11%。 ...

香港交易及結算所有限公司及香港聯合交易所有限公司對本公佈的內容概不負責，對其準確 性或完整性亦不發表任何聲明，並明確表示概不會對本公告的全部或任何部分內容所產生或 因依賴該等內容而引致的任何損失承擔任何責任。 山東天岳先進科技股份有限公司 SICC CO., LTD. （於中華人民共和國註冊成立的股份有限公司） （股份代號：2631） 海外監管公告 本公告乃根據香港聯合交易所有限公司證券上市規則第13.10B條刊發。 玆載列山東天岳先進科技股份有限公司於上海證券交易所網站( www.sse.com.cn ) 所刊發的公告，僅供參考。 承董事會命 证券代码：688234 证券简称：天岳先进 公告编号：2025-057 山东天岳先进科技股份有限公司 持股 5%以上股东减持股份计划公告 本公司董事会、全体董事及相关股东保证本公告内容不存在任何虚假记载、 误导性陈述或者重大遗漏，并对其内容的真实性、准确性和完整性依法承担法律 责任。 重要内容提示： 大股东持有的基本情况：本次减持计划实施前，山东天岳先进科技股份 有限公司（以下简称"公司"）股东国材股权投资基金（济南）合伙企业（有限 合伙）（以下简称"国材基金"）持有 ...

Core Viewpoint - Tianyue Advanced (02631) has made significant breakthroughs in business expansion, recently announcing a collaboration with Toshiba Electronic Components to enhance the characteristics and quality of silicon carbide power semiconductors, aiming to expand the supply of high-quality substrates [1][3] Group 1: Collaboration and Market Position - The partnership with Toshiba reinforces Tianyue's growing influence in the power semiconductor sector, as evidenced by its recent award from a Japanese semiconductor media outlet, marking the first time a Chinese company has won in this category [3] - Tianyue has established a strong presence in Japan, with sales offices and notable clients including Sumitomo, indicating a strategic focus on this market [3][4] - Chinese substrate manufacturers, represented by Tianyue, are gaining traction in Japan due to their quality and pricing advantages, leading local and European semiconductor firms to switch to Chinese products [3][4] Group 2: Competitive Landscape - The financial struggles of Japanese manufacturer Rohm, which reported an over 80% drop in operating profit, highlight the competitive pressure from Chinese firms like Tianyue, whose silicon carbide substrate technology is now considered top-tier [3][4] - The contrasting operational models between Japanese companies, which often pursue vertical integration, and Chinese firms, which focus on specific production processes, contribute to the competitive dynamics in the semiconductor industry [4] Group 3: International Expansion and Partnerships - Tianyue's collaboration with Infineon, signed in 2023, involves supplying 150mm substrates and assisting in the transition to 200mm silicon carbide wafers, with expected supply volumes representing a significant portion of Infineon's long-term needs [5] - Infineon's recent announcement of a 50 billion investment in Malaysia to build the largest 200mm silicon carbide power semiconductor factory indicates a growing demand for Tianyue's products [5] - The company has established partnerships with major global semiconductor players, including Bosch and ON Semiconductor, with over half of the top ten power semiconductor manufacturers collaborating with Tianyue [6] Group 4: Emerging Applications and Future Opportunities - Silicon carbide's superior performance characteristics position it as a key material in emerging fields such as data centers and AI technologies, with Tianyue poised to capitalize on these trends [9] - The company's strategic partnership with Sunny Optical's subsidiary focuses on micro-nano optics and new materials, further expanding its application scope [9] - As silicon carbide finds broader applications, Tianyue's role as a leading global supplier is expected to grow, providing valuable insights for other Chinese tech firms aiming for international markets [9]

Core Viewpoint - Tianyue Advanced (02631) has made significant breakthroughs in business expansion, recently announcing a collaboration with Toshiba Electronic Components to enhance the characteristics and quality of silicon carbide power semiconductors, aiming to expand the supply of high-quality substrates [1][3] Group 1: Collaboration and Market Position - The partnership with Toshiba, a well-established semiconductor manufacturer in Japan, underscores Tianyue's growing influence in the power semiconductor sector [3] - Tianyue Advanced won the "Semiconductor Electronic Materials" gold award from the authoritative Japanese media "Electronic Device Industry News" in June, marking the first time a Chinese company has achieved this in 31 years [3] - The company has established a sales presence in Japan and has been supplying silicon carbide substrate materials to the Japanese market, with notable clients including Sumitomo [3][4] Group 2: Competitive Landscape - Chinese substrate manufacturers, represented by Tianyue Advanced, are gaining traction among local and European semiconductor firms due to their quality and price advantages [3][4] - The financial report from Japanese manufacturer Rohm indicated a significant drop of over 80% in operating profit, attributing this to the competitive pressure from Chinese manufacturers whose silicon carbide substrate technology has reached top levels [3][4] Group 3: Strategic Advantages - The collaboration with Toshiba may signify a shift where Tianyue, through local innovation, gradually "replaces" foreign competitors and plays a more significant role in the international power semiconductor supply chain [4] - Tianyue's overseas expansion is not limited to Japan, with ongoing developments in other regions also being noteworthy [4] Group 4: Partnerships and Future Prospects - Tianyue Advanced has a prior agreement with German semiconductor manufacturer Infineon, which includes supplying 150mm substrates and assisting in transitioning to 200mm silicon carbide wafers [5] - Infineon announced a 50 billion yuan investment to build the world's largest 200mm silicon carbide power semiconductor factory in Malaysia, indicating a growing demand for Tianyue's products [5] - The company has established partnerships with major global semiconductor giants, with over half of the top ten power semiconductor manufacturers collaborating with Tianyue Advanced [6] Group 5: Emerging Applications - Silicon carbide is recognized for its superior performance in high-pressure and high-temperature scenarios, making it a key material for emerging fields such as data centers and AI glasses [9] - Tianyue Advanced has signed a strategic cooperation agreement with Sunny Optical Technology Group to collaborate in the fields of micro-nano optics and new materials, positioning itself to capture opportunities in these growing markets [9]

香港交易及結算所有限公司及香港聯合交易所有限公司對本公佈的內容概不負責，對其準確 性或完整性亦不發表任何聲明，並明確表示概不會對本公佈的全部或任何部分內容所產生或 因依賴該等內容而引致的任何損失承擔任何責任。 宗艷民先生 香港，2025年8月22日 董事會召開通告 於本公告日期，董事會成員包括(i)執行董事宗艷民先生、高超先生及王俊國先生；(ii)非執行 董事邱宇峰先生、李婉越女士及方偉先生；及(iii)獨立非執行董事李洪輝先生、劉華女士及 黎國鴻先生。 承董事會命 山東天岳先進科技股份有限公司 SICC CO., LTD. 山東天岳先進科技股份有限公司 （於中華人民共和國註冊成立的股份有限公司） （股份代號：2631） 董事長、執行董事兼總經理 山東天岳先進科技股份有限公司（「本公司」）之董事會（「董事會」）謹此宣佈， 本公司將於2025年8月29日（星期五）舉行董事會會議。董事會將於會上通過議 案，其中包括考慮及批准本公司及其附屬公司截至2025年6月30日止六個月之 未經審核綜合中期業績以及其刊發之事宜，並考慮建議派付中期股息（如有）。 ...

Core Viewpoint - Tianyue Advanced (02631) has seen a stock price increase of over 4%, currently trading at 44.6 HKD with a transaction volume of 1.08 billion HKD, following a partnership agreement with Toshiba Electronic Components and Storage Devices Corporation for the development of SiC power semiconductor substrates [1]. Company Summary - Tianyue Advanced has reached a basic agreement with Toshiba for technical collaboration aimed at enhancing the characteristics and quality of SiC power semiconductors [1]. - The collaboration will focus on expanding the commercial supply of high-quality and stable substrates for SiC power semiconductors [1]. Industry Summary - Toshiba is accelerating the development of SiC devices for applications such as server power supplies and automotive uses, leveraging its experience in railway SiC power semiconductors [1]. - The partnership with Tianyue Advanced, a global leader in SiC substrate development and mass production technology, is expected to provide optimal solutions for various application scenarios and accelerate business expansion [1].

Group 1 - Tianyue Advanced (02631) saw its stock rise over 4% in the afternoon, currently trading at 44.6 HKD with a transaction volume of 1.08 million HKD [1] - On August 22, Tianyue Advanced reached a basic agreement with Toshiba Electronic Components and Storage Devices Corporation to collaborate on the development and manufacturing of SiC power semiconductor substrates [1] - The collaboration will focus on technical cooperation to enhance the characteristics and quality of SiC power semiconductors, as well as commercial cooperation to expand the supply of high-quality stable substrates [1] Group 2 - Toshiba is accelerating the development of SiC devices for server power supplies and automotive applications, aiming to reduce losses in SiC power semiconductors and develop high-reliability, high-efficiency products for efficient power conversion [1] - The partnership with Tianyue Advanced, a global leader in SiC substrate development and mass production technology, is expected to provide optimal solutions for various application scenarios and accelerate business expansion [1]

Group 1 - Tianyue Advanced (02631) saw its stock rise over 4% in the afternoon, currently trading at 44.6 HKD with a transaction volume of 108 million HKD [1] - On August 22, Tianyue Advanced reached a basic agreement with Toshiba Electronic Components and Storage Devices Corporation to collaborate on the development and manufacturing of SiC power semiconductor substrates [1] - The collaboration will focus on technical cooperation to enhance the characteristics and quality of SiC power semiconductors, as well as commercial cooperation to expand the supply of high-quality stable substrates [1] Group 2 - Toshiba is accelerating the development of SiC devices for server power supplies and automotive applications, aiming to reduce power loss in SiC power semiconductors and develop high-reliability, high-efficiency products for efficient power conversion [1] - The partnership with Tianyue Advanced, a global leader in SiC substrate development and mass production technology, is expected to provide optimal solutions for various application scenarios and accelerate business expansion [1]

Group 1 - Tianyue Advanced has reached a basic agreement with Toshiba Electronic Components and Storage Devices Corporation to collaborate on the development and manufacturing of SiC power semiconductor substrates, focusing on technical cooperation for enhancing SiC power semiconductor characteristics and quality improvement [1][2] - The demand for power semiconductors, essential for energy efficiency and carbon neutrality in electrical devices, is expected to continue expanding, particularly for SiC substrates used in electric vehicles and renewable energy systems [3] - Toshiba is accelerating the development of SiC devices for server power supplies and automotive applications, aiming to reduce power loss and enhance reliability and efficiency in high-efficiency power conversion applications [3][4] Group 2 - Tianyue Advanced, founded in 2010, specializes in the development and production of single-crystal SiC substrates, holding a top-five position globally in related patents [4] - The company plans to launch the world's first 12-inch SiC substrate in 2024 and aims to achieve a full range of n-type, semi-insulating, and p-type 12-inch substrates by 2025 [4] - The collaboration with Toshiba is expected to enhance substrate quality and reliability, supporting the growth of the SiC power semiconductor market [4]