Core Viewpoint - Tianyue Advanced (02631) has seen a significant stock price increase, reaching a new high of 59.90 HKD, reflecting strong market interest and potential growth in the semiconductor materials sector [1] Company Summary - Tianyue Advanced's stock price rose over 12% during trading, with a current price of 59.35 HKD and a trading volume of 225 million HKD [1] - The company specializes in silicon carbide (SiC) substrates, which are widely applicable in power semiconductor devices, RF semiconductor devices, optical waveguides, TF-SAW filters, and heat dissipation components [1] - Tianyue Advanced is recognized as a global leader in SiC substrate materials, positioning itself to benefit from advancements in AI chip technology [1] Industry Summary - The primary application industries for Tianyue Advanced's products include electric vehicles and photovoltaics [1] - Huaxin Securities highlights the company's leadership in SiC substrates, while Dongfang Securities notes that the potential for SiC materials in high-end computing chips has not been fully realized [1] - There is an anticipated future application of silicon carbide materials in computing power chips, indicating a growing market opportunity [1]

Core Viewpoint - Tianyue Advanced (02631) has seen a significant increase in stock price, reaching a new high of 57.9 HKD, driven by its advancements in silicon carbide (SiC) substrate applications in various industries [1] Company Summary - Tianyue Advanced's silicon carbide substrates are widely applicable in power semiconductor devices, RF semiconductor devices, optical waveguides, TF-SAW filters, and heat dissipation components [1] - The main application industries for the company's products include electric vehicles, photovoltaics, energy storage systems, power grids, rail transportation, communications, AI glasses, smartphones, and semiconductor lasers [1] - The company has established itself as a significant supplier to internationally renowned semiconductor companies, with its products gaining broad recognition globally [1] Industry Summary - Recent reports indicate that NVIDIA plans to replace silicon with silicon carbide in the intermediate substrate materials of its next-generation Rubin processors to enhance performance [1] - Huaxin Securities highlights that Tianyue Advanced is a global leader in SiC substrate materials, positioning the company to benefit from the technological iteration of terminal AI chips [1] - Dongfang Securities notes that the potential applications of silicon carbide materials in high-end computing chips have not been fully explored, suggesting future growth opportunities in advanced packaging and other areas [1]

消息面上，天岳先进日前在互动平台表示，公司的碳化硅衬底可被广泛应用于功率半导体器件、射频半 导体器件以及光波导、TF-SAW滤波器、散热部件等下游产品中，主要应用行业包括电动汽车、光伏及 储能系统、电力电网、轨道交通、通信、AI眼镜、智能手机、半导体激光等。公司已跻身为国际知名 半导体公司的重要供应商，公司的产品亦在国际上获得广泛认可。公司的碳化硅衬底经客户制成电力电 子器件，该等器件最终应用于诸如电动汽车、AI数据中心及光伏系统等多领域的终端产品中。 此前科创板日报报道称，为提升性能，英伟达在新一代Rubin处理器的开发蓝图中，计划把CoWoS先进 封装环节的中间基板材料，由硅换成碳化硅(SIC)。华鑫证券指出，公司为SiC衬底材料全球领导者，有 望受益于终端AI芯片技术迭代。东方证券认为，碳化硅材料在高端算力芯片中的应用潜力尚未完全挖 掘。未来，碳化硅材料有望应用于算力芯片的先进封装等环节，打开产业成长空间。 智通财经APP获悉，天岳先进(02631)再涨超7%，高见57.9港元刷新上市新高。截至发稿，涨7.13%，报 57.1港元，成交额1.24亿港元。 ...

Group 1 - Tianyue Advanced (02631) saw a significant stock price increase, rising over 12% to a new high of 54.55 HKD, with a trading volume of 259 million HKD [1] - The company has strategically positioned itself in the silicon carbide (SiC) substrate market, offering a product matrix of 6/8/12 inch SiC substrates, including high-purity semi-insulating, conductive P-type, and conductive N-type substrates [1] - The company has established business partnerships with over half of the top ten global power semiconductor manufacturers and is actively expanding its overseas market presence [1] Group 2 - The company's high-quality conductive SiC substrates are gaining traction in international markets, with collaborations established with renowned companies such as Infineon, Bosch, and ON Semiconductor in the power electronics and automotive electronics sectors [1] - The applications of the company's products span across electric vehicles, AI data centers, and photovoltaic systems, indicating a diverse market reach [1]

Core Viewpoint - Tianyue Advanced (02631) has seen a significant stock price increase, reaching a new high of 54.55 HKD, driven by advancements in silicon carbide (SiC) substrate products and successful overseas market expansion [1] Company Summary - Tianyue Advanced has strategically positioned itself in the silicon carbide substrate market, offering a product matrix that includes 6/8/12-inch substrates, such as high-purity semi-insulating, conductive P-type, and conductive N-type SiC substrates [1] - The company is recognized as a leading player in the silicon carbide substrate sector, with successful collaborations established with over half of the top ten global power semiconductor manufacturers [1] - The company is actively expanding its overseas market presence, with high-quality conductive SiC substrates being adopted by renowned international companies in the power electronics and automotive electronics sectors, including Infineon, Bosch, and ON Semiconductor [1] Industry Summary - The shift in the semiconductor industry towards advanced packaging technologies, such as the transition from silicon to silicon carbide in the CoWoS packaging process, highlights the growing importance of silicon carbide materials [1] - Applications for silicon carbide substrates are expanding into electric vehicles, AI data centers, and photovoltaic systems, indicating a robust demand in various high-tech sectors [1]

Core Viewpoint - Tianyue Advanced (02631) saw a nearly 5% increase in stock price, attributed to significant advancements in silicon carbide wafer processing technology by Beijing Jingfei Semiconductor Technology, a spin-off from the Chinese Academy of Sciences [1] Company Summary - Tianyue Advanced's stock rose by 4.75% to HKD 50.7, with a trading volume of HKD 112 million [1] - The company has focused on the research and industrialization of high-quality silicon carbide substrates since its inception [1] - It is one of the few companies globally capable of mass-producing 8-inch silicon carbide substrates and was the first to commercialize the transition from 2-inch to 8-inch substrates [1] - Tianyue Advanced is also a pioneer in launching 12-inch silicon carbide substrates [1] Industry Summary - Recent breakthroughs in silicon carbide wafer processing technology are expected to lower costs and improve efficiency in the global silicon carbide industry [1] - The potential applications of silicon carbide materials in high-end computing chips have not been fully explored, indicating future growth opportunities in advanced packaging and other areas [1] - NVIDIA's plans to use silicon carbide substrates in the advanced packaging of next-generation GPU chips highlight the increasing relevance of silicon carbide in the semiconductor industry [1]

天岳先进半年报显示，公司自成立以来即专注于高品质碳化硅衬底的研发与产业化。公司是全球少数能 够实现8英寸碳化硅衬底量产、率先实现2英寸到8英寸碳化硅衬底的商业化的公司之一，也是率先推出 12英寸碳化硅衬底的公司。东方证券认为，碳化硅材料在高端算力芯片中的应用潜力尚未完全挖掘。未 来，碳化硅材料有望应用于算力芯片的先进封装等环节，打开产业成长空间。 智通财经APP获悉，天岳先进(02631)涨近5%，截至发稿，涨4.75%，报50.7港元，成交额1.12亿港元。 消息面上，据报道，近期，中国科学院半导体研究所科技成果转化企业北京晶飞半导体科技在碳化硅晶 圆加工技术领域取得重大突破，成功利用自主研发的激光剥离设备实现了12英寸碳化硅晶圆的剥离。该 突破标志着中国在第三代半导体关键制造装备领域迈出重要一步，为全球碳化硅产业的降本增效提供了 全新解决方案。此前，有报道称，英伟达计划在新一代GPU芯片的先进封装环节中采用碳化硅衬底。 ...

股份發行人及根據《上市規則》第十九B章上市的香港預託證券發行人的證券變動月報表 截至月份: 2025年8月31日 狀態: 新提交 致：香港交易及結算所有限公司 公司名稱: 山東天岳先進科技股份有限公司 呈交日期: 2025年9月5日 I. 法定/註冊股本變動 | 1. 股份分類 | 普通股 | 股份類別 | H | | | 於香港聯交所上市 (註1) | | 是 | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | 證券代號 (如上市) | 02631 | 說明 | H 股 | | | | | | | | | | 法定/註冊股份數目 | | | 面值 | | | 法定/註冊股本 | | | 上月底結存 | | | 47,745,700 | RMB | | | 1 RMB | | 47,745,700 | | 增加 / 減少 (-) | | | | | | | RMB | | | | 本月底結存 | | | 47,745,700 | RMB | | | 1 RMB | | 47,745,700 | | 2. 股份分類 | 普通股 ...

Core Viewpoint - Tianyue Advanced (02631) has seen its stock price increase by over 15%, reaching a new high of 48.96 HKD, driven by advancements in silicon carbide (SiC) substrate technology in the semiconductor industry [1] Group 1: Company Developments - Tianyue Advanced is a leading player in the production of 8-inch conductive silicon carbide substrates, being one of the few companies capable of mass production [1] - The company has established a product matrix for silicon carbide substrates, including 6/8/12-inch variants, which positions it favorably in the market [1] - The group is actively promoting the transition of major clients to 8-inch silicon carbide substrates, indicating strong demand and market positioning [1] Group 2: Industry Trends - NVIDIA plans to replace silicon with silicon carbide in the intermediate substrate of its next-generation Rubin processors to enhance performance, with a target implementation by 2027 [1] - TSMC is collaborating with various manufacturers to develop the manufacturing technology for silicon carbide intermediate substrates, highlighting the industry's shift towards advanced materials [1] - The first generation of NVIDIA's Rubin GPU will still use silicon substrates, but the transition to silicon carbide is driven by the need to manage heat in high-performance chips [1]

Core Viewpoint - Tianyue Advanced (02631) has seen its stock price increase by over 15%, reaching a new high of 48.96 HKD, driven by advancements in silicon carbide (SiC) substrate technology in the semiconductor industry [1] Company Summary - Tianyue Advanced is positioned as a leading player in the production of 8-inch conductive silicon carbide substrates, being one of the few companies capable of mass production in this area [1] - The company has developed a comprehensive product matrix for silicon carbide substrates, including 6/8/12-inch variants, which consist of 12-inch high-purity semi-insulating, 12-inch conductive P-type, and 12-inch conductive N-type silicon carbide substrates [1] Industry Summary - NVIDIA plans to transition from silicon to silicon carbide for the intermediate substrate material in its next-generation Rubin processors to enhance performance, with a target implementation by 2027 [1] - TSMC is collaborating with various manufacturers to develop the manufacturing technology for silicon carbide intermediate substrates, indicating a significant industry shift towards this material [1]