斯达半导体股份有限公司 证券代码：603290 证券简称：斯达半导 公告编号：2025-042 关于取消监事会、变更公司注册资本、修订《公司章程》 并办理工商变更登记及制定、修订部分治理制度的公告 本公司董事会及全体董事保证本公告内容不存在任何虚假记载、误导性陈述 或者重大遗漏，并对其内容的真实性、准确性和完整性承担法律责任。 斯达半导体股份有限公司（以下简称"公司"）于 2025 年 12 月 08 日召开第 五届董事会第十二次会议审议通过了《关于取消监事会、变更公司注册资本、修 订<公司章程>并办理工商变更登记的议案》及《关于制定及修订公司治理相关 制度的议案》；同日，公司召开第五届监事会第十二次会议审议通过了《关于取 消监事会、变更公司注册资本、修订<公司章程>并办理工商变更登记的议案》。 鉴于公司拟根据上市公司治理要求取消监事会，同时公司因 2021 年股票期 权激励计划行权，股份总数由 239,469,014 股变更为 239,473,466 股，注册资本由 人民币 239,469,014 元增加至 239,473,466 元。根据《中华人民共和国公司法》（以 下简称"《公司法》"）、《中华人民共和 ...

证券代码：603290 证券简称：斯达半导 公告编号：2025-043 斯达半导体股份有限公司 关于召开2025年第二次临时股东大会的通知 本公司董事会及全体董事保证本公告内容不存在任何虚假记载、误导性陈述 或者重大遗漏，并对其内容的真实性、准确性和完整性承担法律责任。 重要内容提示： 一、 召开会议的基本情况 (四)现场会议召开的日期、时间和地点 召开的日期时间：2025 年 12 月 24 日 10 点 召开地点：浙江省嘉兴市南湖区科兴路 988 号斯达半导会议室 (五)网络投票的系统、起止日期和投票时间。 股东大会召开日期：2025年12月24日 本次股东大会采用的网络投票系统：上海证券交易所股东大会网络投票 系统 (一)股东大会类型和届次 2025年第二次临时股东大会 (二)股东大会召集人：董事会 (三)投票方式：本次股东大会所采用的表决方式是现场投票和网络投票相结合的 方式 网络投票系统：上海证券交易所股东大会网络投票系统 网络投票起止时间：自2025 年 12 月 24 日 至2025 年 12 月 24 日 采用上海证券交易所网络投票系统，通过交易系统投票平台的投票时间为股 东大会召开当日的交易 ...

第五届监事会第十二次会议决议公告 本公司监事会及全体监事保证本公告内容不存在任何虚假记载、误导性陈述 或者重大遗漏，并对其内容的真实性、准确性和完整性承担法律责任。 斯达半导体股份有限公司（以下简称"公司"）第五届监事会第十二次会议 于 2025 年 11 月 30 日以书面、邮件、电话等方式发出通知，并于 2025 年 12 月 08 日以现场方式召开。本次会议应到监事 3 人，实到监事 3 人，本次会议由监 事会主席刘志红先生主持，本次监事会的召开符合《中华人民共和国公司法》和 《斯达半导体股份有限公司章程》的规定。经与会监事认真审议，以记名投票表 决方式一致通过以下决议： 一、审议并通过了《关于取消监事会、变更公司注册资本、修订<公司章程> 并办理工商变更登记的议案》。 证券代码：603290 证券简称：斯达半导 公告编号：2025-041 斯达半导体股份有限公司 特此公告。 斯达半导体股份有限公司监事会 2025 年 12 月 08 日 1 表决结果：3 票同意、0 票反对、0 票弃权。 ...

证券代码：603290 证券简称：斯达半导 公告编号：2025-040 斯达半导体股份有限公司 第五届董事会第十二次会议决议公告 本公司董事会及全体董事保证本公告内容不存在任何虚假记载、误导性陈述 或者重大遗漏，并对其内容的真实性、准确性和完整性承担法律责任。 斯达半导体股份有限公司（以下简称"公司"）第五届董事会第十二次会议 于 2025 年 11 月 30 日以书面、邮件、电话等方式发出通知，并于 2025 年 12 月 08 日以现场和通讯结合的方式召开。本次会议应到董事 7 人，实到董事 7 人， 本次会议由董事长沈华先生主持，本次董事会的召开符合《中华人民共和国公司 法》和《斯达半导体股份有限公司章程》的规定。经与会董事认真审议，以记名 投票表决方式一致通过以下决议： 一、审议并通过了《关于取消监事会、变更公司注册资本、修订<公司章程> 并办理工商变更登记的议案》。 2.02《关于修订<董事会议事规则>的议案》 表决结果：赞成 7 票、反对 0 票、弃权 0 票。 2.03《关于修订<独立董事工作制度>的议案》 表决结果：赞成 7 票、反对 0 票、弃权 0 票。 表决结果：同意 7 票，反对 0 ...

Core Viewpoint - The collaboration between global semiconductor giants and Chinese technology leaders signifies a profound industrial transformation, with Chinese companies rapidly advancing in the power semiconductor sector, moving from the periphery to the center of the global stage [1][2][3] Group 1: Collaborations and Partnerships - Onsemi and Innoscience have formed a deep collaboration to develop next-generation efficient power devices based on Innoscience's 8-inch silicon-based GaN technology, targeting markets such as industrial, automotive, telecommunications, consumer electronics, and AI data centers [1][3] - STMicroelectronics and Sanan Optoelectronics are jointly building a silicon carbide (SiC) manufacturing plant in Chongqing, with an expected annual capacity of hundreds of thousands of wafers, marking a significant investment of approximately 230 billion RMB [4][5] - Infineon has established long-term supply agreements with domestic companies for high-quality SiC substrates, ensuring a stable supply of materials for SiC semiconductor production [6][7] Group 2: Market Dynamics and Growth - The global power semiconductor market is projected to see GaN technology capture approximately $2.9 billion (11%) by 2030, with a compound annual growth rate of 42% from 2024 to 2030 [3] - China's power semiconductor industry is expected to reach a market size of 105.775 billion RMB in 2024, maintaining its position as the largest consumer market globally, with a domestic production rate exceeding 80% for low-end power devices [10][11] - Innoscience has achieved a global market share of over 42.4% in 2024, with cumulative shipments exceeding 2 billion chips, highlighting its significant position in the global semiconductor landscape [11] Group 3: Industry Trends and Future Outlook - The shift from passive following to active selection by international giants indicates a recognition of China's capabilities in core technology breakthroughs and market potential [8][9] - The rise of domestic companies in the power semiconductor sector is characterized by a combination of integrated device manufacturing (IDM) and specialized divisions, enhancing self-sufficiency and competitiveness [9][10] - The future landscape will require Chinese companies to focus on technological innovation, global expansion, and collaborative industry chain development to maintain their competitive edge [14][15]

Core Viewpoint - The article highlights the significant transformation in the global semiconductor industry, particularly in the power semiconductor sector, where Chinese companies are rapidly advancing from a position of dependency to becoming key players in the global market [1][2][3]. Group 1: Industry Dynamics - Onsemi and Innoscience have formed a deep collaboration to develop next-generation efficient power devices based on Innoscience's 8-inch silicon-based GaN technology, indicating a shift in global partnerships towards Chinese technology leaders [1][3]. - The global power semiconductor giants are increasingly engaging in comprehensive collaborations with Chinese firms, including joint R&D and supply chain integration, reflecting a recognition of China's industrial strength [2][8]. - The power semiconductor sector is identified as a leading area for China's semiconductor industry to achieve breakthroughs, supported by a growing number of domestic companies emerging in this field [2][9]. Group 2: Market Opportunities - The global market for GaN power semiconductors is projected to reach approximately $2.9 billion by 2030, with a compound annual growth rate of 42% from 2024 to 2030, highlighting the growth potential in this segment [3][12]. - The Chinese power semiconductor market is expected to reach 105.775 billion yuan in 2024, maintaining its position as the largest consumer market globally, with a significant increase in domestic production rates [11][12]. - The domestic market for low-end power devices has surpassed 80% in localization, with expectations for SiC manufacturers' market share to increase by 10-15 percentage points this year [11][12]. Group 3: Technological Advancements - Innoscience has become the first global company to achieve mass production of 8-inch GaN wafers, with a market share exceeding 42.4% in 2024, showcasing its technological and production capabilities [12]. - Chinese companies have made significant advancements in SiC substrate and epitaxial wafer technologies, with Tianyu Semiconductor leading in market share for carbon silicon epitaxial wafers [11][12]. - The collaboration between international firms and Chinese manufacturers is evolving from technology licensing to joint R&D and supply chain binding, indicating a deeper integration of Chinese firms into the global semiconductor ecosystem [8][9]. Group 4: Strategic Collaborations - STMicroelectronics and Sanan Optoelectronics are collaborating to build a SiC manufacturing facility in Chongqing, with an expected investment of approximately 23 billion yuan, marking a significant step in localizing SiC production [5][6]. - Infineon has established long-term supply agreements with domestic SiC substrate manufacturers to secure competitive materials for its semiconductor production, further integrating Chinese suppliers into its supply chain [6][7]. - Other international companies, such as ROHM and Panasonic, are also forming strategic partnerships with Chinese firms to enhance their product offerings and market reach in the power semiconductor sector [7][8]. Group 5: Future Outlook - The article emphasizes that the rise of China's power semiconductor industry is not coincidental but a result of multiple factors, including strong market demand, strategic opportunities in third-generation semiconductors, and supportive policies [12][13][14]. - The industry is transitioning from a focus on domestic market replacement to actively participating in global competition, with Chinese firms expanding their international presence and capabilities [14][15]. - The future competition in the power semiconductor sector will hinge on technological endurance, ecosystem development, and global operational capabilities, as Chinese companies aim to lead in key areas like SiC and GaN [15][16].

Industry Overview - Charging and swapping equipment is essential for providing power to electric vehicles, encompassing core charging devices and auxiliary maintenance facilities, serving as a critical link between new energy vehicles and the power system [2][5] - The industry is entering a phase of "quantity and quality improvement" driven by robust demand for charging infrastructure and supportive national policies [1][5] Market Size and Growth - By October 2025, the total number of charging infrastructure units in China is expected to reach 18.645 million, with 5,036 battery swapping stations [1][6] - The market size of the charging and swapping equipment industry is projected to reach 35.6 billion yuan in 2024, with a year-on-year growth of 12% [11] Policy Support - A series of national policies have been implemented to support the development of charging infrastructure, including guidelines for integrating electric vehicles with the power grid and promoting large-scale applications of vehicle-grid interaction [5][6] Industry Chain - The industry chain consists of upstream core components and raw material suppliers, midstream equipment manufacturers, and downstream charging service operators [6][8] Regional Distribution - The distribution of public charging facilities shows a concentration in key provinces such as Guangdong, Zhejiang, and Jiangsu, which account for 66.1% of the total [8][9] Competitive Landscape - The market is characterized by high concentration, with the top 15 charging operators holding 83.8% of the market share, led by companies like TELD and Star Charge [9][10] Technological Advancements - The industry is experiencing a shift towards high-voltage and liquid-cooled charging technologies, with 800V platforms becoming more common [11][12] - The standardization and automation of battery swapping equipment are accelerating, reducing swapping times to 3-5 minutes [11] Future Trends - The industry is expected to focus on technological innovation, ecological collaboration, and optimized layout, with a shift towards high-quality development [12][14] - The charging network will aim for comprehensive coverage, balancing urban and rural infrastructure to meet diverse energy needs [15][16]

Core Insights - The report by Jinyuan Securities highlights the significant energy consumption associated with training advanced AI models, particularly GPT-4, which requires approximately 38.2 GWh over a training period of 95 days [1][2]. Group 1: AI Model Training Energy Consumption - The maximum rated power consumption of a single GPU can reach 1000 watts [2]. - GPT-4's training energy demand translates to an average daily consumption of about 0.40 GWh, equivalent to the daily electricity usage of approximately 40,000 households [1][2]. Group 2: Data Center Energy Consumption Trends - Global data center electricity consumption is projected to reach 415 TWh in 2024, accounting for about 1.5% of the world's total electricity consumption, with the US, Europe, and China collectively responsible for 85% of this total [2]. - In the US, data center electricity consumption is expected to grow at an annual rate of approximately 12% from 2015 to 2024, resulting in an increase of about 250 TWh, with 2024 consumption estimated at 180 TWh [2]. Group 3: Future Projections - By 2030, global data center electricity consumption is forecasted to double to approximately 945 TWh, representing nearly 3% of global electricity consumption, with the US market projected to consume about 420 TWh, a 130% increase from 2024 [2]. Group 4: Power Infrastructure Challenges - The mismatch between the manufacturing cycle of power infrastructure and the demand cycle for AI presents significant challenges [3]. - Solar energy and gas turbines are currently the only reliable power sources that can be developed in a short timeframe to meet data center demands, but solar energy's intermittent nature poses challenges for continuous operation [3]. Group 5: Energy Storage Systems - A complete electrochemical energy storage system consists of battery packs, battery management systems (BMS), energy management systems (EMS), and storage inverters, collectively referred to as "3S" [4]. - The global inverter market is projected to reach approximately $129.2 billion in 2024, with the battery energy storage system (BESS) market expected to grow at a compound annual growth rate of 18.5% from 2024 to 2030, reaching $23.3 billion by 2030 [4]. Group 6: Power Device Market Insights - The IGBT and silicon-based MOSFET markets are significant, with the IGBT market projected to grow from approximately $8.887 billion in 2024 to $16.151 billion by 2030, reflecting a compound annual growth rate of 10.47% [5]. - The market for silicon carbide (SiC) devices is also expected to grow significantly, with a combined market size projected to increase from $2.967 billion in 2024 to $9.520 billion by 2030, at a compound annual growth rate of 21.45% [5]. Group 7: Related Companies - Companies involved in this sector include SDIC (603290.SH), Yangjie Technology (300373.SZ), ChipLink Integration-U (688469.SH), Silan Microelectronics (600460.SH), and Dongwei Semiconductor (688261.SH) [6].

Core Viewpoint - The A-share market showed a decline with the Shanghai Composite Index closing at 3878.00 points, down 0.51% and below the five-day moving average, with a total trading volume of 168.36 billion yuan [1]. Group 1: Market Performance - The Shanghai Composite Index closed at 3878.00 points, reflecting a decrease of 0.51% [1]. - The total trading volume in the A-share market reached 168.36 billion yuan [1]. Group 2: Stocks Breaking the Five-Day Moving Average - A total of 233 A-shares broke above the five-day moving average today [1]. - Notable stocks with significant deviation rates include: - Sifangda (300179) with a deviation rate of 12.01% and a daily increase of 15.37% [1]. - *ST Changyao (300391) with a deviation rate of 11.26% and a daily increase of 20.09% [1]. - Jindike (688670) with a deviation rate of 8.49% and a daily increase of 15.93% [1]. Group 3: Stocks with Smaller Deviation Rates - Stocks with smaller deviation rates that just crossed the five-day moving average include: - Jiuli Special Materials (300996) with a deviation rate of 8.38% and a daily increase of 11.38% [1]. - Zhongheng Design (603017) with a deviation rate of 8.14% and a daily increase of 9.98% [1]. - Shuangqiang Technology (001211) with a deviation rate of 7.13% and a daily increase of 9.99% [1].

Group 1 - The Shanghai Composite Index closed at 3878.89 points, below the five-day moving average, with a decline of 0.48% [1] - The total trading volume of A-shares reached 1,352.517 billion yuan [1] - A total of 193 A-shares have surpassed the five-day moving average today, with notable stocks including Sifangda, Puliansoft, and Zhongheng Design showing significant deviation rates of 12.40%, 8.97%, and 8.14% respectively [1] Group 2 - The stocks with the highest deviation rates from the five-day moving average include: - Sifangda (300179) with a price increase of 15.89% and a deviation rate of 12.40% - Puliansoft (300996) with a price increase of 12.16% and a deviation rate of 8.97% - Zhongheng Design (603017) with a price increase of 9.98% and a deviation rate of 8.14% [1] - Other notable stocks with smaller deviation rates include: - Jianmin Group, Klete, and Sanwei Equipment, which have just crossed the five-day moving average [1]