碳化硅材料应用

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英伟达+台积电最新动作,碳化硅材料有望应用于先进封装
Xuan Gu Bao· 2025-09-07 23:16
Group 1 - Nvidia plans to replace silicon with silicon carbide (SiC) in the intermediate substrate material of its next-generation Rubin processors to enhance performance, with SiC expected to be integrated by 2027 [1] - TSMC is also planning to use 12-inch single crystal silicon carbide for heat dissipation substrates, replacing traditional materials like alumina and sapphire [1] - Silicon carbide has a thermal conductivity of 500 W/mK, significantly higher than silicon's thermal conductivity of approximately 150 W/mK, indicating its potential in high-heat environments [1] Group 2 - As Nvidia's GPU chips increase in power, integrating multiple chips into a silicon interlayer will raise thermal performance requirements, making SiC interlayers a promising solution to reduce heat sink size and optimize overall packaging [1] - The application potential of silicon carbide in high-end computing chips is not fully realized, suggesting future growth opportunities in advanced packaging and other segments [1] - Silicon carbide is expected to improve heat dissipation efficiency when used in heat dissipation substrates, as current ceramic materials have lower thermal conductivity than single crystal silicon carbide [1] Group 3 - Companies like 瑞纳智能, 错威特, and 宇环数控 are actively advancing silicon carbide technology and products, indicating a growing interest in this material within the semiconductor industry [3][4][5] - The market for silicon carbide devices is expanding, with various companies like 得润电子 and 甘化科工 achieving significant milestones in production and development of SiC components [4][5][6] - The overall trend in the semiconductor industry is shifting towards third-generation semiconductor materials, particularly silicon carbide, which is being adopted for various applications including automotive and power electronics [4][5][6]
鑫闻界丨港交所迎来“济南前首富”,61岁宗艳民等来二敲钟
Qi Lu Wan Bao· 2025-08-20 10:32
Group 1 - Shandong Tianyue Advanced Technology Co., Ltd. officially listed on the Hong Kong Stock Exchange on August 20, 2025, marking its second listing after debuting on the Shanghai Stock Exchange in 2022 [1] - The company specializes in the research and production of silicon carbide semiconductor materials and is the only listed company in the silicon carbide substrate sector [1][2] - The founder, Zong Yanmin, became the "richest man" in Jinan with a wealth of 13 billion yuan, highlighting the company's significant market presence [1][2] Group 2 - In the first half of 2025, the global IPO market raised $60.9 billion, with Hong Kong leading at 107.1 billion HKD (approximately $13.9 billion), a 22% increase from the previous year [2] - Shandong province had 11 companies apply for IPOs in Hong Kong, accounting for 5% of the total applications from mainland China [2] - Tianyue Advanced has attracted significant investment from major players, including Huawei's Hubble Investment and other industry giants like CATL and SAIC Group [3] Group 3 - The company achieved a major breakthrough in 2024 with the global launch of its 12-inch silicon carbide substrate, which is expected to see extensive application in the global renewable energy market [4] - The demand for silicon carbide in data centers is projected to grow significantly, with the global AI data center capacity expected to increase to 299 GW by 2030, leading to a market size exceeding 80 billion yuan for silicon carbide power devices [4] - Other companies from Shandong, such as Binhua Co. and Shandong Gold Mining Co., are also planning to list on the Hong Kong Stock Exchange, indicating a trend of local enterprises seeking international capital [4][5]