碳化硅功率半导体

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日经BP精选:EV失速打击碳化硅功率半导体,AI服务器用氮化镓是希望之星?
日经中文网· 2025-09-19 02:49
日经中文网"开设了"日经BP精选"栏目。日经BP是日本经济新闻社媒体集团的一员,成立于1969年。作 为日本领先的B2B媒体公司,聚焦经营管理、专业技术及生活时尚三大主要领域。敬请读者关注。 编者荐语: 以下文章来源于日经BP ,作者日经BP 针对碳化硅等功率半导体和LSI(大规模集成电路),罗姆在2024财年(2024年4月~2025年3月)对日 本国内外的工厂实施减损处理,计提303亿日元损失。在同期的财报中,最终损益出现500亿日元的亏 损。 成为高风险、高回报市场 这3家企业的状况说明了业务的严峻性。不仅如此,还意味着功率半导体行业的商业模式发生了巨大变 化。这些都与纯电动汽车(EV)有关。几年前,有观点预测"2025年前后起EV市场将一举崛起",对市 场扩大的期待 很高。与此同时,以新冠疫情为契机,半导体的短缺变得明显。 阅读更多内容请点击下方"阅读原文" 功率半导体行业围绕碳化硅(SiC)正处于动荡之中 (图) 。制造元件不可或缺的碳化硅晶圆的最大厂 商美国Wolfspeed已申请适用《美国破产法》(相当于日本《民事再生法》)第11条。受此影响,日本 瑞萨电子将遭受约2500亿日元损失。 图 碳化 ...
韩国:SiC自给率目标20%
半导体芯闻· 2025-09-10 10:11
Group 1 - The South Korean government aims to increase the self-sufficiency rate of silicon carbide (SiC) power semiconductor technology from 10% to 20% by 2030, focusing on advanced industries such as electric vehicles and data centers [2][3] - The government plans to initiate a domestic demonstration project for liquefied natural gas (LNG) storage tanks, addressing the lack of independent technology and the need to pay licensing fees for technology [4] - The government will actively support the development of graphene technology, which is considered a "dream material," and promote its commercialization through cooperation between supply and demand enterprises [5] Group 2 - The government intends to enhance the competitiveness of K-food exports, which have set annual export records for nine consecutive years, by establishing overseas export hubs and expanding joint logistics centers [6] - The government will support the development of next-generation special carbon steel and cultivate doctoral-level professionals in this field to maintain competitiveness against the EU and Japan [5][6] - The Ministry of Economy and Finance plans to announce the remaining 10 key projects under the super-innovation economy initiative, focusing on management to ensure tangible results [6]
碳化硅功率半导体革命的加速器:国产烧结银崛起
半导体行业观察· 2025-06-13 00:46
公众号记得加星标⭐️,第一时间看推送不会错过。 从电动汽车的高效驱动系统,到光伏发电中的逆变器,再到5G通讯的核心射频模块,以碳化硅 为代表的第三代功率半导体相比传统的硅芯片呈现出更为优越的性能。当新能源汽车续航里程突 破1000公里、800V高压快充成为标配,碳化硅功率半导体的革命正在加速到来。而更高的功率 密度、更优的散热能力、更强的可靠性以及更高的工作温度范围等严苛要求,让传统的焊料封装 与连接技术在新的技术时代,正在被高性能、高可靠性的烧结银封装与连接技术快速取代。烧结 银技术也成为了碳化硅等第三代功率半导体芯片与模组封装的首选材料。 图源:帝科湃泰 1 烧结银技术概述 碳化硅和氮化镓的应用领域 烧结银的概念 烧结银技术,是一种新型无铅化芯片互连技术。该技术主要是对微米级及以下的银颗粒在300℃以下 进行烧结,通过原子间的扩散作用实现良好连接,从而在低温烧结(<250 ℃ )条件下获得耐高温 (>700℃)和高导热(>200W/m.K)的烧结银芯片连接界面。 技术发展历程 烧结银技术原理 原子扩散是烧结银技术实现良好连接的核心机制。在低温烧结过程中,银颗粒表面的原子具有较高的 活性,由于表面自由能的驱 ...
两大巨头退出碳化硅市场 环球晶、汉磊、嘉晶迎转单
Jing Ji Ri Bao· 2025-06-02 22:28
Core Viewpoint - The exit of major players like Wolfspeed and Renesas from the silicon carbide (SiC) market may create new opportunities for Taiwanese manufacturers such as GlobalWafers, Hanlei, and Jiajing to capture market share and benefit from order transfers [1][2]. Group 1: Market Dynamics - Wolfspeed, a global leader in SiC, is reportedly seeking bankruptcy protection, while Renesas, a key player in automotive semiconductors, plans to abandon SiC production due to market conditions [1]. - The slowdown in the electric vehicle market and increased production from Chinese SiC manufacturers have led to oversupply and price declines, prompting Renesas to dissolve its SiC team and adjust its production plans [1]. - The potential bankruptcy of Wolfspeed and Renesas's exit could accelerate structural adjustments in the SiC industry, leading to a healthier market order [1]. Group 2: Opportunities for Taiwanese Manufacturers - GlobalWafers aims to position itself as a reliable SiC supplier outside of mainland China, with plans to launch 12-inch SiC wafers this year at competitive costs [2]. - Hanlei and Jiajing are also expected to benefit from the order transfer wave, with Hanlei focusing on power semiconductor wafer foundry services and producing SiC and GaN semiconductors [2]. - Hanlei has partnered with World Advanced to enter the 8-inch SiC semiconductor wafer manufacturing market, further expanding its capabilities [3].
瑞萨退出SiC功率半导体赛道,中国厂商崛起
日经中文网· 2025-05-31 08:07
Core Viewpoint - Renesas has dissolved its silicon carbide (SiC) team at the Takasaki factory, indicating a strategic shift in its next-generation power semiconductor strategy due to competitive pressure from rapidly growing Chinese semiconductor companies [1][4]. Group 1: Market Dynamics - The sales of silicon carbide power semiconductors are projected to reach 391 billion yen in 2024, an 18% increase from 2023, but lower than the previously forecasted 491.5 billion yen [3]. - The decline in electric vehicle (EV) sales growth, exacerbated by the end of European subsidies and increased production from Chinese companies, has led to a surplus in supply and falling prices [3][7]. - In 2024, three Chinese companies, including BYD, are expected to occupy three of the top ten positions in the silicon carbide power semiconductor market, collectively holding a market share of 8.8% [4][5]. Group 2: Competitive Landscape - BYD plans to officially launch its power semiconductor factory around 2024, aiming to increase its market share in silicon carbide products and enhance its core technology development [5]. - The Chinese government has been actively promoting domestic semiconductor production through policies and subsidies, particularly in the automotive semiconductor sector, which is not subject to U.S. export controls [7]. - The competitive gap in technology between Chinese and Western semiconductor manufacturers has narrowed, with Chinese companies producing at lower prices [7].
瑞萨放弃SiC计划
半导体行业观察· 2025-05-30 01:55
Core Viewpoint - Renesas Electronics has abandoned its plans to use silicon carbide (SiC) for power semiconductor production, which was initially set to begin in early 2025 at its Takasaki plant in Gunma Prefecture [1][2]. Group 1: Renesas Electronics' Strategy - Renesas Electronics previously announced plans to start producing next-generation power semiconductor products using SiC to reduce losses, but specific investment amounts and production scales were not determined [1]. - The company has signed a $2 billion deposit agreement with Wolfspeed to ensure a 10-year supply of SiC wafers and epitaxial wafers, which is crucial for its transition from silicon to SiC power devices [2]. Group 2: Wolfspeed's Role - The long-term supply agreement requires Wolfspeed to supply 150mm SiC bare wafers and epitaxial wafers starting in 2025, with plans to provide 200mm wafers once its manufacturing center in North Carolina is fully operational [2]. - Wolfspeed's executives emphasized the importance of having Renesas as a customer to lead the global transition from silicon to SiC, especially as demand for SiC in automotive, industrial, and energy sectors rises [2]. Group 3: Market Implications - The $2 billion deposit from Renesas will support Wolfspeed's capacity expansion plans, including the establishment of the largest SiC materials factory in the world [2]. - The shift to 200mm SiC wafers, which are 1.7 times larger than 150mm wafers, will allow for the production of more chips per wafer, thereby reducing device costs [2].