GaNSafe技术
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英诺赛科,跃居全球第一
半导体行业观察· 2025-10-30 01:07
Core Insights - Gallium Nitride (GaN) has emerged as one of the most disruptive semiconductor technologies in the past decade, with a projected market size of $3 billion by 2030 [2] - The consumer and mobile sectors are expected to account for over 50% of the power GaN device market by 2030, driven by rapid charger adoption [2] - The automotive market is anticipated to be the next wave of expansion, with a projected compound annual growth rate (CAGR) of up to 73% from 2024 to 2030 [2] - Data centers are seeking energy-efficient solutions, with NVIDIA collaborating with wide bandgap chip manufacturers to integrate SiC and GaN technologies into their HVDC power systems [3] - The power GaN ecosystem is entering a decisive phase of consolidation and expansion, highlighted by significant acquisitions such as Infineon's $830 million acquisition of GaN Systems [6] Market Trends - The automotive and mobility sectors are expected to see significant growth, with GaN devices being widely used in LiDAR systems and on-board chargers [2] - The telecommunications market is projected to grow at an impressive CAGR of 53% from 2024 to 2030, driven by the adoption of GaN technology [3] - Innoscience is expected to maintain market leadership with a projected market share of 30% in 2024, supported by design orders in various sectors [6] Company Developments - Renesas Electronics, through its subsidiary Transphorm, is expected to achieve GaN revenue exceeding $100 million by 2026 [9] - Infineon is solidifying its position in the GaN space through its CoolGaN™ products and the acquisition of GaN Systems, while also collaborating with NVIDIA on a pilot production line [9] - Navitas is expanding its business from consumer markets to high-power markets, leveraging its GaNSafe technology [9] - EPC is innovating with a broad e-mode product portfolio, reinforcing its position as a key low-voltage GaN supplier [10] Competitive Landscape - Foundries are playing a crucial role in the GaN ecosystem, with companies like Polar Semi and PSMC entering the competition [10] - GlobalFoundries, X-FAB, and Vanguard are expanding their GaN product offerings, while Samsung is preparing to launch GaN products in 2026 [10] - Onsemi is expected to enter the GaN market soon, supported by its strong position in silicon and SiC [10]
台积电终止GaN代工
半导体芯闻· 2025-07-02 10:21
Core Insights - Navitas Semiconductor has announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC) to produce and develop 200mm silicon-based gallium nitride (GaN) technology after TSMC plans to terminate its GaN foundry business by 2027 [1][2] - The collaboration aims to meet the growing demand for GaN products in 48V infrastructure, including large-scale AI data centers and electric vehicles, with initial devices expected to be certified by Q4 2025 [1][2] Group 1 - Navitas will utilize Powerchip's 200mm wafer production capabilities at its 8B fab in Taiwan, which has been operational since 2019, to support various GaN mass production processes [1] - Powerchip's advanced 180nm CMOS technology will enhance performance, power efficiency, integration, and cost-effectiveness of Navitas's GaN product lineup, which will range from 100V to 650V [1][2] - The first 100V series is expected to enter production in H1 2026, while the 650V devices will transition from TSMC to Powerchip within the next 12-24 months [1] Group 2 - Navitas has made several announcements in the AI data center, electric vehicle, and solar markets, including collaborations with NVIDIA and Enphase, showcasing its GaN and SiC technology [2] - The CEO of Navitas expressed excitement about the partnership with Powerchip, emphasizing the commitment to continuous innovation in product performance and cost efficiency [2] - Powerchip's general manager highlighted the long-standing collaboration with Navitas in GaN-on-Si technology and the nearing completion of product certification, paving the way for mass production [2]
台积电终止GaN代工,纳微宣布:与他合作
是说芯语· 2025-07-02 08:52
Core Viewpoint - Navitas Semiconductor has announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC) to produce and develop 200mm silicon-based Gallium Nitride (GaN) technology after TSMC plans to terminate its GaN foundry services by 2027 [1][2]. Group 1: Partnership and Production - Navitas will utilize PSMC's 200mm wafer fabrication facility located in Zhunan Science Park, Taiwan, which has been operational since 2019, to support various GaN mass production processes [2]. - The collaboration aims to produce Navitas' GaN product portfolio with voltage ratings from 100V to 650V, addressing the growing demand for GaN in 48V infrastructure, including large-scale AI data centers and electric vehicles [2]. Group 2: Technological Advancements - PSMC's advanced 180nm CMOS process technology will enhance performance, power efficiency, integration, and cost-effectiveness of the GaN devices [2]. - The first devices are expected to complete certification by Q4 2025, with the 100V series anticipated to enter production in H1 2026, while the 650V devices will transition from TSMC to PSMC within the next 12-24 months [2]. Group 3: Market Applications and Collaborations - Navitas has recently made announcements regarding its GaN and SiC technology support for AI data centers, electric vehicles, and solar markets, including collaborations with NVIDIA and Enphase [3]. - The CEO of Navitas expressed confidence in the partnership with PSMC to advance the mass production of GaN-on-silicon technology, emphasizing ongoing innovation in product performance and cost efficiency [3].