Core Viewpoint - The cooling technology will become a key competitive factor in the high bandwidth memory (HBM) market as HBM5 is expected to commercialize around 2029, shifting the focus from packaging to cooling methods [1][2]. Summary by Sections HBM Technology Roadmap - The roadmap from HBM4 to HBM8 spans from 2025 to 2040, detailing advancements in HBM architecture, cooling methods, TSV density, and interlayer technologies [1]. - HBM4 is projected to have a data rate of 8 Gbps, a bandwidth of 2.0 TB/s, and a capacity of 36/48 GB per HBM, utilizing liquid cooling methods [3]. - HBM5 will maintain the 8 Gbps data rate but will double the bandwidth to 4 TB/s and increase capacity to 80 GB [3]. - HBM6 will introduce a data rate of 16 Gbps and a bandwidth of 8 TB/s, with a capacity of 96/120 GB [3]. - HBM7 is expected to reach 24 TB/s bandwidth and 160/192 GB capacity, while HBM8 will achieve 32 Gbps data rate, 64 TB/s bandwidth, and 200/240 GB capacity [3]. Cooling Technologies - HBM5 will utilize immersion cooling, where the substrate and package are submerged in cooling liquid, addressing limitations of current liquid cooling methods [1]. - HBM7 will require embedded cooling systems to inject cooling liquid between DRAM chips, introducing fluid TSVs [2]. - The professor emphasizes that cooling will be critical as the base chip will take on part of the GPU workload starting from HBM4, leading to increased temperatures [1][2]. Bonding and Performance Factors - Bonding will also play a significant role in determining HBM performance, with mixed glass and silicon interlayers being introduced from HBM6 onwards [2].

Core Viewpoint - The cooling technology will become a key competitive factor in the high bandwidth memory (HBM) market as HBM5 is expected to commercialize around 2029, shifting the focus from packaging to cooling solutions [1][2]. Summary by Sections HBM Technology Roadmap - The roadmap from HBM4 to HBM8 spans from 2025 to 2040, detailing advancements in HBM architecture, cooling methods, TSV density, and interposer layers [1]. - HBM4 is projected to be available in 2026, with a data rate of 8 Gbps, bandwidth of 2.0 TB/s, and a capacity of 36/48 GB per HBM [3]. - HBM5, expected in 2029, will double the bandwidth to 4 TB/s and increase capacity to 80 GB [3]. - HBM6, HBM7, and HBM8 will further enhance data rates and capacities, reaching up to 32 Gbps and 240 GB respectively by 2038 [3]. Cooling Technologies - HBM5 will utilize immersion cooling, where the substrate and package are submerged in cooling liquid, addressing limitations of current liquid cooling methods [2]. - HBM7 will require embedded cooling systems to inject coolant between DRAM chips, introducing fluid TSVs for enhanced thermal management [2]. - The introduction of new types of TSVs, such as thermal TSVs and power TSVs, will support the cooling needs of future HBM generations [2]. Performance Factors - Bonding techniques will also play a crucial role in HBM performance, with HBM6 introducing a hybrid interposer of glass and silicon [2]. - The integration of advanced packaging technologies will allow base chips to take on GPU workloads, necessitating improved cooling solutions due to increased temperatures [2].

Core Viewpoint - The article emphasizes the critical importance of advanced bonding technology in the semiconductor industry, highlighting the need for domestic innovation in bonding equipment to enhance China's competitiveness in the global market [1]. Group 1: Industry Context - The semiconductor industry is facing increasing competition, making the development of domestic advanced bonding equipment a strategic necessity for China [1]. - Historically, high-end bonding equipment has relied on imports, which poses a significant risk to the domestic semiconductor sector [1]. Group 2: Company Innovations - Qinghe Crystal has developed a product matrix with four proprietary technologies: ultra-high vacuum room temperature bonding systems, hybrid bonding equipment, thermal compression bonding equipment, and a full range of bonding process services [1]. - These technologies are applied in cutting-edge fields such as advanced packaging, semiconductor device manufacturing, wafer-level heterogeneous material integration, and MEMS sensors [1]. Group 3: Upcoming Event - Qinghe Crystal will host a sharing session titled "Leading the Future of Bonding, Innovating New Industrial Patterns" at SEMICON China on March 26, 2025, in Shanghai [2][4]. - The event will focus on the latest trends in bonding technology, core advantages of self-innovated equipment, and opportunities for collaboration [4].