公众号记得加星标⭐️，第一时间看推送不会错过。 来源：内容 编译自 etnews 。 SK海力士正在改变其晶圆切割工艺，以适应下一代存储器制造。随着第六代高带宽存储器（HBM4）和400层及以上 NAND闪存晶圆的薄化，现有工艺已达到极限。 据业内人士9日透露，SK海力士计划在HBM4晶圆切割中引入飞秒开槽和全切割工艺。为此，已确认正在与激光设备合作 伙伴共同探索新的晶圆切割设备联合评估项目（JEP）。目前，该公司已与部分合作伙伴开展技术测试。一位知情人士表 示："SK海力士计划对现有的晶圆切割方法进行重大改变"，并且"正在与合作伙伴讨论多项技术解决方案"。SK海 力士一直以来都使用机械切割（刀片）或隐形切割技术来切割晶圆。机械切割是指用金刚石砂轮切割晶圆，而隐形切割是 指在晶圆内部制造裂缝以将其分离。 隐形切割是将半导体电路切割成单个芯片（die）的主流技术，但随着高端半导体晶圆厚度的不断减小，该技术也变得越来 越难。晶圆厚度在100微米（㎛）左右时，主要采用机械切割；晶圆厚度在50微米左右时，则采用隐形切割。然而，SK海 力士正在准备的HBM4晶圆厚度更薄，约为20~30微米。 一位业内人士表示："如果采 ...

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