Core Viewpoint - Samsung Electronics' second-quarter performance decline is primarily attributed to poor results in its semiconductor business, which accounts for 50-60% of its overall profit. The company has struggled to benefit from the booming AI sector due to ongoing technical issues with high-bandwidth memory (HBM) products [1][2]. Group 1: Semiconductor Business Performance - The Device Solutions (DS) division is expected to report sales of 27 trillion KRW and an operating profit of around 1 trillion KRW for the second quarter, with some analysts predicting a drop in operating profit to 400 billion KRW [1]. - The inventory valuation loss provision for the DS division is estimated at about 1 trillion KRW, reflecting a decline in product prices and anticipated difficulties in selling certain products [2]. - The wafer foundry and system LSI divisions are projected to incur losses of approximately 2 trillion KRW, continuing a trend of significant losses due to the inability to secure major clients [2]. Group 2: Future Outlook and Recovery - Industry observers believe Samsung may have hit bottom in the second quarter and could rebound starting in the third quarter, driven by rising prices for older and high-end memory products [3]. - The DS division's operating profit is forecasted to reach between 3 trillion and 5 trillion KRW in the third and fourth quarters, respectively, as demand for IT equipment and semiconductors typically increases in the second half of the year [3]. - Recent increases in HBM shipments to major tech companies like AMD and Broadcom, along with the commencement of 2nm chip production, suggest a potential recovery in the foundry business [3]. Group 3: HBM and DRAM Developments - Samsung has completed the development of sixth-generation DRAM based on advanced 10nm technology, moving closer to mass production of HBM4, which is expected to be a key component in the AI era [5][10]. - The company is also working on accelerating the mass production of HBM4 and has begun supplying 12-layer HBM3E products to AMD, while seeking to establish supply agreements with Nvidia [8][9]. - The successful commercialization of HBM4 is seen as crucial for Samsung to regain momentum in the high-end memory market, especially as competition intensifies with rivals like SK Hynix [8][10]. Group 4: Strategic Partnerships and Market Position - Samsung's efforts to secure large-volume GPU orders from Nvidia are critical for improving its financial performance and enhancing its competitiveness in the AI chip market [13]. - The company is currently producing Nvidia's Tegra T239 chip for the next-generation Nintendo Switch 2, which has seen commercial success, potentially boosting Samsung's foundry business profitability [11]. - Samsung's strategy includes developing and mass-producing new market segments such as HBM4 and customized HBM chips, aiming to avoid past mistakes and capitalize on emerging opportunities [11].

Core Viewpoint - Samsung Electronics has reduced the production of its 12-layer HBM3E memory due to uncertainties in demand and delays in negotiations with NVIDIA, leading to a conservative operational strategy to mitigate inventory risks [1][2][3] Group 1: Production Adjustments - Samsung has cut the operating rate of its HBM3E 12-layer production line to half, resulting in a monthly output of 30,000 to 40,000 wafers, down from an expected 70,000 to 80,000 wafers [2] - The uncertainty in supplying HBM3E to NVIDIA has led to a significant reduction in wafer input, with expectations for quality testing to be completed by September instead of June [2][3] Group 2: Future Developments - Samsung has completed the development of its sixth-generation DRAM based on advanced 10nm technology, which is crucial for the upcoming HBM4 production [4][5] - The company aims to achieve mass production of HBM4, which is anticipated to be a key component in the AI era, significantly enhancing data processing speed and efficiency [5][6] Group 3: Market Position and Competition - Samsung's HBM business rebound is expected to be influenced by the expansion of non-NVIDIA ASIC demand, with major tech companies like Google, Meta, and AWS focusing on AI semiconductors for data centers [3] - The successful commercialization of HBM4 is seen as critical for Samsung to regain momentum in the high-end memory market, especially as competitors like SK Hynix are already advancing in HBM4 development [5][6]

如果您希望可以时常见面，欢迎标星收藏哦~ 来源：内容 编译自 sedaily ，谢谢 。 三星电子已确定了三年内量产垂直通道晶体管（VCT）DRAM（即所谓的下一代存储器）的路线 图。竞争对手公司SK海力士这被解读为蕴含着提前一代成功实现量产、挽回"超级差距"地位的意 志。 据业内人士27日透露，三星电子半导体（DS）部门管理层已经敲定了这一路线图，并已开始认真 开展该产品的量产工作。 VCT DRAM是指存储元件中控制电流流动的晶体管垂直排列的产品。它被认为是一个"游戏规则改 变者"，通过放置比现有平放方法更多的晶体管，可以实现高容量。但这种方法比现有工艺要困难 和复杂得多。突破技术壁垒并不容易，因为它不仅需要制造存储器件的前期工艺，还需要现有 DRAM工艺中未曾用到的先进封装工艺。 三星电子目前正在量产10㎚（纳米，十亿分之一米）级第五代DRAM，并计划今年量产第六代。 在确定明年开发第 7 代 DRAM 的计划后，该公司对第 8 代 (1e) DRAM 和全新方法 VCT DRAM 进行了权衡，最终决定采用 VCT DRAM 方法。据悉，SK海力士已制定了第七代→1nm级第一代 （0a）→垂直DRAM（ ...