近日，研究机构桑迪亚国家实验室（Sandia National Laboratories）的一则报道引发了行业热议。 英特尔在上世纪70年代一度占据全球DRAM市场90%的份额，成为了无可争议的行业龙头。 报道指出，该实验室与英特尔在内存技术领域取得了重大进展，其共同开展的"先进内存技术"（AMT）项目成功将DRAM相关研发成果转化为新型内存 技术，旨在解决美国国家核安全管理局（NNSA）关键任务中的内存带宽与延迟难题。 这一消息让"英特尔是否会重返DRAM赛道"的猜想浮出水面。 虽然这则新闻并未明确宣告英特尔将大规模重返独立DRAM制造市场，但其中释放的信号却值得玩味。尤其是结合英特尔的历史积淀，且当前DRAM行业 正处于AI超级周期带动的上涨通道之中，这一动向更显微妙。 这个曾经的存储霸主，"重返"的可能性正变得愈发值得探讨。 存储巨头的浮沉 英特尔与DRAM的渊源可以追溯到行业起步之初。 1970年，英特尔推出1103芯片，这是全球首款商业成功的DRAM产品，凭借在价格、密度和逻辑兼容性上对磁芯存储器的全面超越，迅速改写了存储行业 的格局。 当时，1103芯片不仅赢得了HP、DEC、霍尼韦尔等主流计算机 ...

公众号记得加星标⭐️，第一时间看推送不会错过。 近日，研究机构桑迪亚国家实验室（Sandia National Laboratories）的一则报道引发了行业热 议。 报 道 指 出 ， 该 实 验 室 与 英 特 尔 在 内 存 技 术 领 域 取 得 了 重 大 进 展 ， 其 共 同 开 展 的 " 先 进 内 存 技 术"（AMT）项目成功将DRAM相关研发成果转化为新型内存技术，旨在解决美国国家核安全管理局 （NNSA）关键任务中的内存带宽与延迟难题。 这一消息让"英特尔是否会重返DRAM赛道"的猜想浮出水面。 英特尔与DRAM的渊源可以追溯到行业起步之初。 1970年，英特尔推出1103芯片，这是全球首款商业成功的DRAM产品，凭借在价格、密度和逻辑兼 容性上对磁芯存储器的全面超越，迅速改写了存储行业的格局。 英特尔在上世纪70年代一度占据全球DRAM市场90%的份额，成为了无可争议的行业龙头。 当时，1103芯片不仅赢得了HP、DEC、霍尼韦尔等主流计算机厂商的青睐，更确立了DRAM的发展 模式，为后续技术演进奠定了基础。 然而，DRAM行业的周期性与市场竞争的残酷性，让英特尔的霸主地位未能延续 ...

Core Insights - The global DRAM market has experienced a significant shift in Q1 2025, with SK Hynix surpassing Samsung Electronics to become the largest DRAM supplier for the first time since Samsung established its market leadership in 1992 [1] - SK Hynix achieved a market share of 36.9%, while Samsung's market share fell to 34.4%, marking the end of Samsung's 33-year market monopoly [1] - Despite a 9% quarter-over-quarter decline in global DRAM sales to $26.33 billion due to falling contract prices and decreased HBM shipments, SK Hynix's revenue rose to $9.72 billion, while Samsung's revenue dropped 19% year-over-year to $9.1 billion [1] Market Dynamics - High Bandwidth Memory (HBM) has been a core variable in this market shift, with SK Hynix establishing a significant advantage in the HBM3E sector through long-term technological investments [2] - The fifth-generation HBM3E products utilize a 12-layer stacking technology, achieving a bandwidth of 1.2TB/s and a maximum single-chip capacity of 36GB, primarily supplying AI accelerator cards from Nvidia [2] - SK Hynix's HBM products now dominate the global market, holding over 90% of the HBM3 segment, while Samsung's HBM3E technology has struggled to pass Nvidia's testing, leading to a sharp decline in high-priced product shipments [3] Technological Advancements - The exponential growth of generative AI model parameters has created stringent demands for storage bandwidth and capacity, with Nvidia's H100 GPU requiring 640GB of HBM3E and 2TB of DDR5 memory [4] - SK Hynix has secured over 70% of the AI server market through deep partnerships with Nvidia, with its HBM3E products being adopted by major AI projects from Microsoft and Google [4] - SK Hynix's self-developed MR-MUF technology has improved the stacking layers of HBM3E from 8 to 12, while maintaining good yield rates [5] Future Outlook - Both SK Hynix and Samsung have initiated HBM4 development, with SK Hynix planning to release samples in the second half of 2025, featuring 16-layer stacking and a bandwidth of 2.56TB/s [6] - Samsung is focusing on hybrid bonding technology for HBM4E but faces uncertainties in mass production due to compatibility issues with NAND and DRAM processes [6] - The DRAM industry is shifting from scale competition to deep technological competition, with SK Hynix, Samsung, and Micron collectively holding over 95% market share in DRAM [7] Market Trends - The price cycle is showing structural differentiation, with standard DRAM prices dropping over 10%, while HBM3E prices have only slightly decreased by 3% [7] - As demand for AI servers continues to grow, DRAM prices are expected to stabilize and potentially rise, with HBM3E prices projected to increase by 5%-10% [7] - This transition signifies a broader storage revolution driven by AI, with technological innovation and ecosystem restructuring shaping the industry's landscape for the next decade [7]