在半导体存储技术日新月异的今天，中国存储企业正以前所未有的速度崛起，不断推动着行业边界的拓 展。近日，存储上市公司江波龙以创新的"Office is Factory"灵活制造商业模式，推出了集成封装mSSD （Micro SSD），以卓越的性能和灵活的设计，重新定义了SSD的标准，为存储定制市场带来了革命性 的变化。 灵活扩展：满足多元需求的利器 mSSD在形态创新上同样不遗余力，其20×30mm的小尺寸设计使拓展安装更加灵活，同时可以兼容M.2 2230规格。产品提供512GB至4TB的多档容量选择，并创新性地配备卡扣式散热拓展卡，无需工具即可 灵活适配M.2 2280、M.2 2242、M.2 2230等主流规格，实现了SKU的多合一。这种设计极大地增强了客 户端的兼容性，降低了维护成本，使得存储定制变得更加简单高效。无论是AI、人形机器人、PC笔 电、游戏掌机扩容，还是无人机、VR设备等高负载应用场景，mSSD都能轻松应对，展现出强大的适应 性和灵活性。 绿色环保：可持续发展的承诺 在追求高性能的同时，mSSD也不忘对环境的责任。其生产流程直接避免了SMT环节中的高能耗工序， 显著降低了能源消耗与碳排放 ...

Core Viewpoint - Jiangbolong (301308) reported strong financial performance in Q3 2023, with significant year-on-year growth in revenue and net profit, indicating a positive trend in the semiconductor storage market [1][2]. Financial Performance - For the first three quarters of 2023, Jiangbolong achieved revenue of 16.734 billion yuan, a year-on-year increase of 26.12%, and a net profit of 713 million yuan, up 27.95% [1]. - In Q3 2023 alone, the company recorded revenue of 6.539 billion yuan, representing a 54.60% year-on-year growth, and a net profit of 698 million yuan, compared to a loss of 36.83 million yuan in the same period last year [1]. Business Development - Jiangbolong's business expansion is progressing steadily, with a focus on enterprise-level storage and a growing customer base, including major clients and strategic partnerships [2]. - The company has successfully deployed over 10 million self-developed main control chips, enhancing its competitive edge in the market [2]. - Jiangbolong has established a strategic partnership with SanDisk to co-develop customized high-quality UFS products for the mobile and IoT markets [2]. Market Outlook - The company is optimistic about storage price trends, citing increased demand from large cloud service providers for high-capacity DDR5 and eSSD, which has exceeded original supply expectations [2][3]. - Rising storage wafer prices are expected to positively impact the company's gross margin, although material price fluctuations are only one factor influencing performance [3]. - Jiangbolong's continuous breakthroughs in enterprise storage, high-end consumer storage, overseas business, and self-developed main control chips are expected to drive sustained profitability growth [3].

Financial Performance - The company reported a revenue of 2,547,589,270.04 yuan for the first half of 2025, representing a year-on-year increase of 27.44% [2][3] - The net profit attributable to shareholders was 15,535,249.59 yuan, a decrease of 46.07% compared to the same period last year [2][3] - The net profit after deducting non-recurring gains and losses was 10,734,361.75 yuan, down 23.42% year-on-year [2][3] - The net cash flow from operating activities was -68,200,050.23 yuan, an improvement of 21.69% from the previous year [3] - Basic and diluted earnings per share were both 0.02 yuan, reflecting a decline of 33.33% [3] - The weighted average return on equity was 0.97%, down 0.90% from the previous year [3] Asset and Equity Position - As of the end of the reporting period, total assets amounted to 4,738,773,738.19 yuan, a decrease of 1.14% year-on-year [2][3] - The net assets attributable to shareholders were 1,552,793,643.09 yuan, showing a growth of 1.01% compared to the end of the previous year [2][3] Business Expansion and Market Development - The company is focused on expanding production, market development, and stabilizing operations to achieve new breakthroughs in overall business scale [2] - In the LED lighting sector, the company has made significant progress in consumer electronics, automotive electronics, and fire safety markets, securing contracts for major projects [4] - The company is actively expanding its international business, successfully establishing partnerships with quality distributors in Thailand and Malaysia [4] Semiconductor Storage Business - The semiconductor storage segment achieved a revenue of 473 million yuan, marking a substantial year-on-year growth of 444.58% [5] - The company is advancing in R&D, focusing on testing technology, hardware development, and automotive-grade product development, while also securing multiple patents [5] - Key projects include the development of enterprise-level PCIe 5.0 SSDs and successful mass production of DDR5 4800 memory modules [5]

Group 1: DRAM Evolution - Samsung Electronics reviewed the evolution of DRAM units, highlighting the transition from planar n-channel MOS FETs in the 1990s to advanced structures in the 21st century due to short-channel effects and leakage currents [1][3] - The layout of DRAM unit arrays improved in the 2010s, reducing unit area from "8F2" to "6F2," achieving a 25% reduction in area while maintaining the same processing dimensions [1][3] - The next generation of DRAM, referred to as "0A" (below 10nm), is expected to shift from the "6F2" layout to a "4F2" layout, indicating a significant change in design [3][4] Group 2: 3D DRAM Development - Samsung is exploring 3D DRAM technology, which involves vertically stacking longer DRAM units to increase memory capacity [6][8] - The prototype of 3D DRAM, known as "VS-CAT," demonstrates the potential for increased density and reduced silicon area by stacking storage unit arrays above peripheral circuits [8][12] Group 3: NAND Flash Memory Evolution - NAND flash memory has reached the limits of density and miniaturization, prompting a shift from planar NAND to 3D NAND technology, which significantly increases charge storage capacity and reduces interference between adjacent units [10][12] - The number of stacked layers in 3D NAND has increased from 32 layers in the early 2010s to over 300 layers by the mid-2020s, enhancing memory density [12][14] - Challenges similar to those faced by planar NAND persist in 3D NAND, including difficulties in etching deeper holes for unit string channels and increased interference due to reduced spacing between storage holes [12][13] Group 4: Ferroelectric Film Applications - The introduction of ferroelectric films in NAND flash memory units aims to reduce programming voltage and suppress threshold voltage fluctuations, which can help mitigate interference between cells [14][16] - The use of ferroelectric films allows for multi-value storage capabilities, increasing the number of threshold voltage levels from two to eight or sixteen [14][16] Group 5: Future Technologies and Innovations - Various companies and experts shared advancements in DRAM and NAND technologies, including imec's pure metal gate technology and NEO Semiconductor's 3D X-DRAM technology [18][19] - Innovations in ferroelectric memory and resistive memory technologies were also discussed, showcasing ongoing efforts to enhance performance and reliability in semiconductor storage solutions [19][20]

来源：内 容 编译自 pcwatch ，谢谢。 如果您希望可以时常见面，欢迎标星收藏哦~ 自旋轨道扭矩结构和磁各向异性的设计技术。 参考链接 https://pc.watch.impress.co.jp/docs/column/semicon/2010780.html 2025年的IEEE国际存储器研讨会（IMW）是半导体存储器技术研发的国际会议即将隆重召开。届 时，将会有很多领先的存储技术发布。 据介绍，Kioxia 将报告具有 CBA（CMOS 直接键合到阵列）结构的 3D NAND 闪存的交叉位线 (CBL) 架构。相信这可以解释为什么通过晶圆键合堆叠外围电路和存储单元阵列的CBA结构在位 线布局方面具有优势。 三星则描述了具有非圆形通道孔形状的多孔 VNAND 闪存架构的阈值电压建模。美光公司模拟了 椭圆度（想象"孔形"）对 3D NAND 读取窗口边缘的影响。在最新的研究中，人们尝试通过将通 道孔的横截面形状制成椭圆形或半圆形而不是圆形来提高密度。这些声明被视为这一努力的一部 分。 旺宏电子国际公司（MXIC）开发了一种用于3D堆叠外围电路的垂直通道高压晶体管，以使1,000 层和超多层3D NAN ...