公众号记得加星标⭐️，第一时间看推送不会错过。 2025年8月3日-4日，2025中国国际低温键合3D集成技术研讨会（LTB-3D 2025 Satellite in China）在天津成功举办。本届大会吸引了来自英国、新加坡、日本、奥地利、荷兰、德国等国 家200余名专家学者及企业代表，包括20余所国际顶尖高校、科研机构和10余家行业领军企业 的专业人士，共同探讨低温键合3D集成领域前沿技术发展。 大会由中国科学院微电子研究所、先进微系统集成协会、西安电子科技大学、中国电子学会、中国电 子材料行业协会、青禾晶元半导体科技（集团）有限责任公司共同主办，由IEEE EPS北京分会、天 津国家芯火双创平台、中国科学院微电子研究所-香港科技大学微电子联合实验室共同协办。西安电 子科技大学郝跃教授、武汉大学刘胜教授、日本东京大学/明星大学须贺唯知教授和长江存储科技有 限责任公司董事长陈南翔担任大会名誉主席。中国科学院微电子研究所刘新宇研究员、日本东京大 学/明星大学须贺唯知教授、西安电子科技大学马晓华教授担任大会主席。 作为一个备受半导体行业瞩目的高端系列国际会议，低温键合3D集成技术研讨会自2007年起每三年 举办 ...

Core Viewpoint - Gallium Nitride (GaN) is poised to become a key component in next-generation high-speed communication systems and advanced data centers, but its high cost and integration challenges with traditional electronics have limited its commercial application [2][3]. Group 1: GaN Technology and Integration - Researchers at MIT have developed a new manufacturing method that allows for the integration of high-performance GaN transistors into standard silicon CMOS chips in a cost-effective and scalable manner [2][3]. - The new method involves constructing numerous micro-transistors on the surface of GaN chips, cutting them out, and then bonding them to silicon chips using a low-temperature process, preserving the functionality of both materials [2][3][4]. - This integration approach enables significant performance improvements while keeping costs low, as only a small amount of GaN material is added to the chip [2][3][4]. Group 2: Performance Enhancements - The new GaN-based power amplifiers demonstrate higher signal strength and efficiency compared to devices using silicon transistors, leading to improved call quality, increased wireless bandwidth, enhanced connectivity, and extended battery life in smartphones [2][3][4][8]. - The compact chips, measuring less than half a square millimeter, utilize advanced silicon processes, allowing for the integration of commonly used components like neutral capacitors, which significantly boosts amplifier gain [8]. Group 3: Manufacturing Process - The manufacturing process involves creating tightly packed micro-transistors on GaN wafers, which are then cut into "dielets" measuring 240 x 410 micrometers [5][7]. - A new tool has been developed to precisely integrate these tiny GaN transistors with silicon chips, utilizing vacuum adhesion and advanced microscopy for alignment [7]. - The bonding process uses copper instead of gold, allowing for lower temperature and cost, while also avoiding contamination issues associated with gold [5][7]. Group 4: Future Implications - The integration of GaN with silicon chips could lead to advancements in quantum applications, as GaN performs better than silicon under low-temperature conditions required for many types of quantum computing [3][4]. - This technology has the potential to revolutionize various commercial markets by combining the best characteristics of silicon with the superior properties of GaN electronic components [3][4].

在半导体行业面临"后摩尔时代"发展瓶颈的当下，键合集成技术正以颠覆性创新姿态，推动着 全球半导体产业格局的深刻变革。这项技术不仅打破了传统平面缩放的物理极限，更通过异质 材料融合与三维集成创新，开辟出全新的半导体技术赛道。 美国DARPA微系统技术办公室主任Mark Rosker曾指出，半导体行业将很快进入由不同材料组 合制造器件的时代，而键合技术正是实现这一目标的关键途径。 "首先，技术深度决定产业高度，青禾晶元拥有200余项授权专利，混合键合精度可以优于100nm， 常温键合、热压键合等模块化设计能够满足多元化需求；其次，相较进口设备，青禾晶元产品具备 显著的价格优势，同时交付周期缩短至6-8个月，并提供全天候响应服务；最后，生态共建引领行业 未 来 ， 青 禾 晶 元 携 手 产 业 链 伙 伴 协 同 创 新 ， 与 顶 尖 高 校 共 育 专 业 人 才 ， 为 行 业 持 续 注 入 新 鲜 血 液……" 母凤文博士指出，半导体是一个长周期产业，而青禾晶元始终以短跑冲刺攻克技术难关，以"马拉松 精神"深耕产业生态。"国产替代只是第一步，我们的愿景是成为全球半导体异质集成领域的引领 者。未来青禾晶元 ...