公众号记得加星标⭐️，第一时间看推送不会错过。 2025年8月3日-4日，2025中国国际低温键合3D集成技术研讨会（LTB-3D 2025 Satellite in China）在天津成功举办。本届大会吸引了来自英国、新加坡、日本、奥地利、荷兰、德国等国 家200余名专家学者及企业代表，包括20余所国际顶尖高校、科研机构和10余家行业领军企业 的专业人士，共同探讨低温键合3D集成领域前沿技术发展。 大会由中国科学院微电子研究所、先进微系统集成协会、西安电子科技大学、中国电子学会、中国电 子材料行业协会、青禾晶元半导体科技（集团）有限责任公司共同主办，由IEEE EPS北京分会、天 津国家芯火双创平台、中国科学院微电子研究所-香港科技大学微电子联合实验室共同协办。西安电 子科技大学郝跃教授、武汉大学刘胜教授、日本东京大学/明星大学须贺唯知教授和长江存储科技有 限责任公司董事长陈南翔担任大会名誉主席。中国科学院微电子研究所刘新宇研究员、日本东京大 学/明星大学须贺唯知教授、西安电子科技大学马晓华教授担任大会主席。 作为一个备受半导体行业瞩目的高端系列国际会议，低温键合3D集成技术研讨会自2007年起每三年 举办 ...

Core Viewpoint - Gallium Nitride (GaN) is poised to become a key component in next-generation high-speed communication systems and advanced data centers, but its high cost and integration challenges with traditional electronics have limited its commercial application [2][3]. Group 1: GaN Technology and Integration - Researchers at MIT have developed a new manufacturing method that allows for the integration of high-performance GaN transistors into standard silicon CMOS chips in a cost-effective and scalable manner [2][3]. - The new method involves constructing numerous micro-transistors on the surface of GaN chips, cutting them out, and then bonding them to silicon chips using a low-temperature process, preserving the functionality of both materials [2][3][4]. - This integration approach enables significant performance improvements while keeping costs low, as only a small amount of GaN material is added to the chip [2][3][4]. Group 2: Performance Enhancements - The new GaN-based power amplifiers demonstrate higher signal strength and efficiency compared to devices using silicon transistors, leading to improved call quality, increased wireless bandwidth, enhanced connectivity, and extended battery life in smartphones [2][3][4][8]. - The compact chips, measuring less than half a square millimeter, utilize advanced silicon processes, allowing for the integration of commonly used components like neutral capacitors, which significantly boosts amplifier gain [8]. Group 3: Manufacturing Process - The manufacturing process involves creating tightly packed micro-transistors on GaN wafers, which are then cut into "dielets" measuring 240 x 410 micrometers [5][7]. - A new tool has been developed to precisely integrate these tiny GaN transistors with silicon chips, utilizing vacuum adhesion and advanced microscopy for alignment [7]. - The bonding process uses copper instead of gold, allowing for lower temperature and cost, while also avoiding contamination issues associated with gold [5][7]. Group 4: Future Implications - The integration of GaN with silicon chips could lead to advancements in quantum applications, as GaN performs better than silicon under low-temperature conditions required for many types of quantum computing [3][4]. - This technology has the potential to revolutionize various commercial markets by combining the best characteristics of silicon with the superior properties of GaN electronic components [3][4].

Core Viewpoint - The semiconductor industry is entering a transformative phase driven by bonding integration technology, which breaks traditional scaling limits and opens new avenues for semiconductor technology [1][3]. Group 1: Industry Challenges and Innovations - The high-end bonding equipment market has been dominated by a few overseas companies, creating significant barriers for Chinese semiconductor firms in terms of cost, technology access, and delivery times [3]. - Qinghe Crystal has made significant strides in overcoming these challenges through independent innovation, achieving breakthroughs in critical processes like room-temperature bonding and 3D heterogeneous integration [3][4]. - The company has developed over 200 authorized patents and offers bonding precision better than 100nm, with a delivery cycle reduced to 6-8 months compared to imported equipment [3][4]. Group 2: Product Offerings and Technological Advancements - Qinghe Crystal has created a comprehensive product matrix that includes various advanced bonding equipment, such as the SAB61 series for ultra-high vacuum room-temperature bonding and the SAB62 series for hydrophilic bonding [7][14][18]. - The SAB83 series offers high-precision TCB bonding, while the SAB64 series provides temporary bonding and debonding solutions, showcasing the company's diverse capabilities [16][21]. - The company has established modern bonding production lines in Tianjin and Shanxi, enabling stable mass production of critical bonding substrates [9][11]. Group 3: Future Vision and Market Position - Qinghe Crystal aims to become a global leader in heterogeneous integration within the semiconductor industry, emphasizing the importance of continuous innovation and collaboration with industry partners [3][5]. - The company is committed to exploring the limitless possibilities of bonding integration technology, contributing to the growth of the semiconductor industry and emerging strategic sectors [11][24]. - The rise of Qinghe Crystal signifies a new era in semiconductor bonding technology driven by Chinese innovation, positioning the company as a key player in advancing the industry [24].