香港交易及結算所有限公司及香港聯合交易所有限公司對本公告的內容概不負責， 對其準確性或完整性亦不發表任何聲明，並明確表示概不就因本公告全部或任何部 分內容而產生或因依賴該等內容而引致的任何損失承擔任何責任。 Guangdong Tianyu Semiconductor Co., Ltd. 廣東天域半導體股份有限公司 (於中華人民共和國註冊成立的股份有限公司) （股份代號：2658） 有關訂立 戰略合作協議的 自願公告 本公告乃由廣東天域半導體股份有限公司（「本公司」，連同其附屬公司，統稱「本集 團」）自願作出，旨在向本公司股東（「股東」）及本公司潛在投資者提供本集團最新業 務發展情況。 本公司董事（「董事」）會（「董事會」）欣然公佈，於2026年2月6日（交易時段後），本公 司及EYEQ Lab Inc.（「EYEQ Lab」）訂立戰略合作協議（「協議」），據此，協議訂約 方（各自為「訂約一方」，統稱「訂約方」）同意建立戰略合作夥伴關係，以發揮彼等各 自於第三代半導體領域的優勢，重點聚焦碳化硅(SiC)外延片的供應與應用。 協議 協議的主要條款概述如下： 訂約方 (i) 本公司；及 (ii) EYEQ Lab ...

股份發行人及根據《上市規則》第十九B章上市的香港預託證券發行人的證券變動月報表 截至月份: 2026年1月31日 狀態: 新提交 致：香港交易及結算所有限公司 公司名稱: 廣東天域半導體股份有限公司 呈交日期: 2026年2月3日 I. 法定/註冊股本變動 | 1. 股份分類 | 普通股 | 股份類別 | H | | | 於香港聯交所上市 (註1) | | 是 | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | 證券代號 (如上市) | 02658 | 說明 | H股 | | | | | | | | | | 法定/註冊股份數目 | | | 面值 | | | 法定/註冊股本 | | | 上月底結存 | | | 58,990,426 | RMB | | | 1 RMB | | 58,990,426 | | 增加 / 減少 (-) | | | | | | | RMB | | | | 本月底結存 | | | 58,990,426 | RMB | | | 1 RMB | | 58,990,426 | | 2. 股份分類 | 普通股 | ...

Group 1 - The core viewpoint of the article highlights a recovery in Hong Kong's chip stocks, with notable gains in several companies [1] Group 2 - Zhaoyi Innovation (03986.HK) experienced a rise of over 6% [1] - Other companies that saw increases include ASMPT (00522.HK), Huahong Semiconductor (01347.HK), Tianyu Semiconductor (02658.HK), Shanghai Fudan (01385.HK), Innodisk (02577.HK), and Birun Technology (06082.HK) [1]

Group 1 - The Hong Kong chip stocks experienced a collective decline, with notable drops in several companies' stock prices [1] - Hua Hong Semiconductor fell over 12%, while Zhaoyi Innovation dropped 11%, and Wallin Technology decreased by over 7% [1] - Other companies such as Shanghai Fudan and InnoCare also saw declines exceeding 6%, with SMIC, ASMPT, and Tianyu Semiconductor dropping more than 5% [1] Group 2 - Hua Hong Semiconductor's stock price decreased by 12.79%, reaching 101.600, with a total market capitalization of 176.54 billion and a year-to-date increase of 36.74% [2] - Zhaoyi Innovation's stock fell by 11.04% to 298.000, with a market cap of 207.64 billion and a year-to-date increase of 83.95% [2] - Wallin Technology's stock price dropped by 7.47% to 32.200, with a market cap of 78.53 billion and a year-to-date increase of 64.29% [2] - Shanghai Fudan's stock decreased by 6.85% to 48.440, with a market cap of 39.90 billion and a year-to-date increase of 6.88% [2] - InnoCare's stock fell by 6.17% to 54.000, with a market cap of 49.42 billion and a year-to-date decrease of 31.12% [2] - SMIC's stock price declined by 5.31% to 71.400, with a market cap of 571.23 billion and a year-to-date change of -0.07% [2] - ASMPT's stock decreased by 5.20% to 98.500, with a market cap of 411.51 billion and a year-to-date increase of 27.18% [2] - Tianyu Semiconductor's stock fell by 5.03% to 47.580, with a market cap of 18.71 billion and a year-to-date change of -0.88% [2]

Core Viewpoint - The silicon carbide (SiC) power device market is experiencing significant growth due to its superior characteristics such as lower conduction resistance, higher operating temperatures, and higher voltage capabilities, leading to increased applications in high-voltage and high-power sectors [1][7]. Market Overview - The global power semiconductor device market is projected to grow to 37.45 billion yuan by 2025, with the SiC power device market expected to reach 2.83 billion yuan, resulting in a market penetration rate of 7.56%. By 2026, the global power semiconductor market is anticipated to reach 40.78 billion yuan, with the SiC market growing to 3.88 billion yuan and a penetration rate of 9.51% [1][5][7]. Industry Definition and Classification - SiC power devices include SiC diodes, SiC switches, and SiC power modules, with various subcategories such as SBD diodes, PiN diodes, and SiC MOSFETs. SiC materials exhibit high thermal conductivity and can operate at high temperatures, making them suitable for extreme conditions [2][4]. Current Industry Status - The power device market is benefiting from the resurgence in consumer electronics demand and the growth of emerging applications such as automotive electronics, IoT, and AI. The SiC power device market has seen substantial growth, with a rise from 450 million yuan in 2020 to 2.83 billion yuan in 2025, and a penetration increase from 1.42% to 7.56% during the same period [4][7]. Industry Chain - The SiC power device industry chain consists of upstream materials like SiC epitaxial wafers and substrates, midstream production involving IDM and wafer foundries, and downstream applications in sectors such as photovoltaic power generation, electric vehicles, and smart grids [7][8]. Competitive Landscape - The global SiC power device market is characterized by a dual oligopoly of international giants and domestic leaders. Key international players include Rohm, Fuji Electric, and Infineon, while domestic companies like BASiC Semiconductor and Stada Semiconductor are gaining market share through vertical integration [8][9]. Future Outlook - The SiC power device sector is expected to continue evolving to meet increasing demands for cost efficiency and quality, with applications expanding in electric vehicles and renewable energy. The industry is focused on enhancing energy conversion efficiency and reliability while reducing costs [10].

Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal, aiming to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment to develop advanced bonding materials and optimize production processes [1]. Group 1: Company Performance - Tianyu Semiconductor's stock price increased by over 6% during trading, with a current price of 53.75 HKD, and a trading volume of 22.71629 million HKD [1]. Group 2: Strategic Cooperation - The agreement focuses on the joint development of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1]. - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions [1]. - The collaboration is expected to improve the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1].

Group 1 - Tianyu Semiconductor (02658.HK) has seen a price increase of over 6%, currently up by 6.43% at HKD 54.65 [1] - The trading volume reached HKD 13.8852 million [1]

Core Viewpoint - Tianyu Semiconductor (02658) has seen a stock price increase of over 6%, currently trading at 54.65 HKD with a transaction volume of 13.8852 million HKD, following the announcement of a strategic cooperation agreement with Qinghe Crystal [1] Group 1: Strategic Cooperation - The agreement between Tianyu Semiconductor and Qinghe Crystal aims to leverage Tianyu's advantages in silicon carbide (SiC) materials and Qinghe's expertise in customized bonding equipment to jointly develop bonding materials [1] - The collaboration will focus on the development and technological iteration of bonding materials, including SiC, silicon on insulator (SOI), piezoelectric substrates on insulator (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions and optimizing production processes [1] Group 2: Market Position and Technical Capability - The cooperation is expected to enhance the group's technical capabilities in large-size composite substrates, ensuring equipment stability and further consolidating the group's market position [1]

Core Viewpoint - Tianyu Semiconductor (02658) has seen a stock increase of over 6%, currently trading at 54.65 HKD, with a transaction volume of 13.8852 million HKD, following the announcement of a strategic cooperation agreement with Qinghe Crystal [1] Group 1: Strategic Cooperation - The agreement between Tianyu Semiconductor and Qinghe Crystal aims to leverage Tianyu's advantages in silicon carbide (SiC) materials and Qinghe's expertise in bonding equipment customization and optimization [1] - The collaboration will focus on the development of bonding materials, including bonding SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] - The board believes that both parties will utilize their competitive advantages to establish a mutually beneficial partnership, enhancing the development of advanced bonding material solutions and optimizing production processes [1] Group 2: Expected Outcomes - The cooperation is expected to improve the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]

Core Viewpoint - Tianyu Semiconductor (02658) has entered into a strategic cooperation agreement with Qinghe Crystal Semiconductor Technology (Group) Co., Ltd. to leverage their respective strengths in silicon carbide (SiC) materials and bonding equipment for the development of advanced bonding materials and technology iterations [1] Group 1: Strategic Cooperation - The agreement aims to establish a mutually beneficial partnership by combining Tianyu's industry strength in SiC epitaxial wafers with Qinghe's expertise in bonding integration technology and equipment [1] - The collaboration will focus on the development of bonding materials, including bonded SiC, silicon-on-insulator (SOI), piezoelectric substrates on insulators (POI), and large-size (12 inches and above) SiC composite heat dissipation substrates [1] Group 2: Expected Outcomes - The partnership is expected to enhance the group's technical capabilities in large-size composite substrates, ensure equipment stability, and further solidify the group's market position [1]