爱建证券指出，HVDC赋能下一代数据中心供电。随着HVDC电源应用于新一代数据中心，电源系统对 于功率半导体的高压大电流要求进一步提升，这也加快了第三代半导体GaN的芯片的应用步伐。该行指 出，英诺赛科作为全球首家实现8英寸硅基GaN晶圆量产的企业，2023年在全球GaN功率半导体企业中 排名第一。公司目前已与欧美传统功率芯片大厂达成战略合作，推动GaN芯片在消费电子、汽车电子等 领域大规模应用。 本文源自：智通财经网 英诺赛科(02577)再涨近6%，截至发稿，涨4.51%，报68.35港元，成交额6.16亿港元。 消息面上，8月1日，NVIDIA官网对800V直流电源架构合作商名录进行了更新，英诺赛科是本次入选英 伟达合作伙伴中唯一的国产芯片企业。双方合作将推动该架构在AI数据中心规模化应用，使单机房算 力密度提升超10倍、单机柜功率密度突破300kW，助力全球Al数据中心迈入兆瓦级供电时代。 ...

Group 1 - The core viewpoint of the news highlights significant advancements in the GaN/SiC integration field, particularly through the establishment of the National Third-Generation Semiconductor Technology Innovation Center in Shenzhen, which has achieved breakthroughs in high-quality GaN/AlGaN heterostructure epitaxy on 8-inch 4° inclined 4H-SiC substrates [1] - The innovation center's achievement is expected to fundamentally address reliability issues in GaN materials by significantly reducing defect density and enhancing thermal performance, thus providing a competitive alternative to existing silicon-based GaN technology [1] - The breakthrough allows for mass production of high-quality GaN epitaxial materials, paving the way for the development and industrialization of GaN/SiC hybrid transistors [1] Group 2 - The demand for high-temperature, high-voltage, high-frequency, and high-power performance in emerging technologies such as 5G, automotive, wireless communication, and aerospace is driving the need for GaN as a representative of third-generation wide bandgap semiconductors [2] - GaN devices exhibit advantages such as low conduction resistance, high electron mobility, and excellent thermal conductivity, which can significantly enhance the performance of new power electronic devices while also achieving energy savings [2] - Major manufacturers are seeking technological breakthroughs in vertical structures and increased integration to obtain superior GaN devices and capture market share, indicating strong growth potential in automotive electrical systems, large-scale integrated circuits, and wireless communication [2]

Group 1 - The Shanghai Stock Exchange Sci-Tech Innovation Board 100 Index (000698) has shown a strong increase of 2.64% as of August 11, 2025, with notable gains in constituent stocks such as Dongxin Co., Ltd. (688110) up 15.19% and Fengcai Technology (688279) up 11.29% [1] - The Sci-Tech 100 ETF Enhanced Index Fund (588680) has achieved a net value increase of 67.43% over the past year, ranking first among comparable funds and placing in the top 5.55% of index equity funds [1] - The Sci-Tech 100 ETF Enhanced Index Fund has a maximum monthly return of 26.13% since its inception, with the longest consecutive monthly gains being three months and a total increase of 38.67% [1] Group 2 - As of July 31, 2025, the top ten weighted stocks in the Sci-Tech Innovation Board 100 Index account for 23.52% of the index, including companies like Borui Pharmaceutical (688166) and BeiGene (688235) [2] - The market is expected to focus on technology growth and cyclical manufacturing as key themes, with a cautious outlook on high-valuation stocks facing performance verification pressure during the earnings report peak in August [2] - The technology sector's valuation is currently around 50% of historical levels, with certain segments like semiconductor materials and 6G showing higher valuation levels compared to their historical averages [2] Group 3 - The Sci-Tech 100 ETF Enhanced Index Fund provides investors with a convenient tool to invest in small and medium-sized companies on the Sci-Tech Board, allowing for easy access to excess returns from these enterprises [3]

智通财经获悉，碳化硅(SiC)领域龙头企业天岳先进(02631)于2025年8月11日-8月14日招股，拟全球发售 4774.57万股H股，其中香港发售占5%，国际发售占95%;发售价将不高于42.80港元;每手100股H股，预 期H股将于2025年8月19日(星期二)上午九时正开始在联交所买卖。 天岳先进成立于2010年，是一家专注于半导体材料碳化硅衬底的高科技领军企业，于2022年1月登陆A 股科创板，成为目前国内该领域唯一一家上市公司。成立至今，公司发展迅猛，以"硬核科技"完成了从 国内领先到全球标杆的跨越，业务亮点可圈可点。 凭借强大的技术实力，天岳先进也被评为国家级制造业"单项冠军示范企业"、国家专精特新"小巨人"重 点企业、国家知识产权示范企业、中国工业碳达峰"领跑者"企业、第二十五届中国专利银奖等荣誉。 据悉，天岳先进本次上市募集资金将用于海外建厂，以应对国际市场对公司产品的需求。 根据法国Yole报告、日本富士经济报告最新统计，天岳先进的碳化硅衬底全球市占率排名前三，其中导 电型碳化硅衬底全球前二;半绝缘碳化硅衬底全球前三;碳化硅领域专利数量，全球第五，国内第一。 天岳先进是第一家荣获半导体国 ...

Group 1 - The article highlights the importance of weekly announcements from Sunday to Thursday, which include significant stock market updates such as suspensions, increases or decreases in holdings, investment wins, acquisitions, performance reports, unlocks, and high transfers [1] - Key announcements are marked in red to assist investors in identifying investment hotspots and preventing potential black swan events, providing ample time for analysis and selection of suitable listed companies [1] Group 2 - A company in the semiconductor sector has completed verification of some new products and received trial orders, focusing on storage chips, third-generation semiconductors, photovoltaics, and superconductors [1] - Another company is collaborating with humanoid robot enterprises to conduct material verification, with a focus on rare earth permanent magnets, humanoid robots, military industry, drones, and chips [1] - A company is advancing over ten innovative drug and medical device projects in the fields of innovative drugs, traditional Chinese medicine, medical devices, and ophthalmic medical care [1]

空间受限：以搭载 NVIDIA GB200 NVL72 或 GB300 NVL72 的设备为例，需配备多达 8 个电源架为 MGX 计算及交换机架供电。若沿用 54V 直流配电， 在兆瓦级功率需求下，Kyber 电源架将占用高达 64U 的机架空间，导致计算设备无安装空间。而在 2025 年 GTC 大会上，NVIDIA 展示的 800V 边车方 案，可在单个 Kyber 机架内为 576 个 Rubin Ultra GPU 供电；另一种替代方案则是为每个计算机架配置专用电源架。 随着ChatGPT、Claude以及DeepSeek等人工智能应用席卷全球，全球各大超大规模AI数据中心的电力需求可谓愈发庞大。随着人工智能工作负载的指数级 增长，正将数据中心推向电力需求的临界点。 全球AI数据中心的功耗正在从传统的每机架 20-30 kW快速跳升至500 kW甚至1 MW级别。英伟达单 AI GPU 服务器功率逼近 1kW，满配 NVL AI 服务器机 柜功率轻松突破 100kW，而规划中的 2027 年量产 1MW AI Factory 机架集群，更是对供电系统提出了颠覆性要求。 随着高性能计算算力密度的不断攀 ...

Core Viewpoint - Tianyue Advanced is set to go public in Hong Kong, aiming to raise approximately $250 to $300 million, showcasing strong growth in the silicon carbide (SiC) substrate market with a projected revenue increase of 41% in 2024 [1][2]. Company Summary - Tianyue Advanced has successfully passed the listing hearing on July 30 and is currently conducting an IPO pre-roadshow [1]. - The company is recognized as a leader in the third-generation semiconductor SiC substrate sector, leveraging technological innovation to accelerate growth [1]. - In 2024, Tianyue Advanced's revenue from substrates is expected to grow significantly, contrasting with many international peers experiencing slowdowns [1][2]. Industry Summary - The global power SiC device market is projected to reach $10.3 billion by 2030, with a compound annual growth rate (CAGR) of 20.3% from 2024 to 2030 [2]. - The shipment volume of 6-inch substrates is forecasted to increase from approximately 1.15 million pieces in 2024 to nearly 4.7 million pieces by 2030, reflecting a CAGR of 26% [2]. - Despite short-term fluctuations in the electric vehicle market, the long-term growth trend for SiC substrates remains intact, driven by demand from sectors like renewable energy storage, AI data centers, and electric vehicles [2]. Competitive Position - Yole identifies Tianyue Advanced as a representative enterprise in the upstream wafer materials sector within China's expanding SiC ecosystem [4]. - The company is expected to benefit from China's position as the largest electric vehicle market and the "China for China" strategy, enhancing its market presence [4]. - In 2024, while competitors like Wolfspeed and Coherent faced revenue declines, Tianyue Advanced's revenue in the N-type SiC substrate sector grew by 35% [4]. Strategic Partnerships - Tianyue Advanced has established significant supply agreements with leading international manufacturers such as Infineon, Bosch, and Onsemi, integrating into the global core supply chain [5]. - The company is recognized as a leader capable of delivering large volumes of 8-inch wafers to the open market, aligning with the industry's shift towards larger substrate sizes [5]. Future Outlook - The ongoing trend towards larger SiC substrates is expected to facilitate applications in emerging consumer electronics, such as AI glasses, which are projected to see substantial market growth [6]. - The anticipated explosion in the AI glasses market could provide Tianyue Advanced with a second growth curve, with expected shipments exceeding 65.9 million units by 2030 [6]. - With a solid fundamental outlook and promising growth expectations, Tianyue Advanced is positioned as a compelling investment opportunity in the upcoming Hong Kong IPO market [6].

Investment Rating - The report maintains a "Positive" investment rating for the electronic industry in China [4] Core Viewpoints - The demand for AI computing facilities is expected to drive the growth of SiC/GaN power devices, opening up new growth opportunities in the industry [2][24] - The report emphasizes that the application potential of SiC/GaN in AI computing facility power supply systems has not been fully explored, and future demand is likely to continue increasing [7][24] Summary by Sections Investment Recommendations and Targets - AI server and data center demand is anticipated to create growth opportunities for SiC/GaN power devices. Key companies to watch include: - GaN industry leader Innoscience - Major power device manufacturers such as Wingtech Technology, China Resources Microelectronics, New Clean Energy, Star Semiconductor, and Tianyue Advanced - Wafer foundry company Chipone Integrated Circuits focusing on SiC power devices - Passive component companies like Farah Electronics and Jianghai Co., Ltd. - Companies in the third-generation semiconductor equipment market like Zhongwei Company [2][29] Industry Dynamics - The report highlights that AI computing facilities will increase the demand for SiC/GaN devices, particularly in high-voltage direct current (HVDC) and power module applications [7][8] - The transition from traditional power supply architectures to higher voltage systems (800V DC) is expected to enhance power transmission efficiency, thus driving the adoption of SiC/GaN devices [10][14] - The report notes that the penetration rate of SiC in global power semiconductors is projected to reach 4.9% by 2024, while GaN's penetration is at 0.5% in 2023, indicating room for growth [21][22] Company Insights - Innoscience is recognized as the global leader in the GaN industry, with a revenue of 830 million yuan in 2024, reflecting a year-on-year growth of 39.8% [30][34] - Wingtech Technology is focusing on semiconductor business growth, with a revenue of 58.4 billion yuan in 2024, and is strategically transforming to enhance its position in the power semiconductor industry [40][44] - China Resources Microelectronics is experiencing steady revenue growth, achieving 10.12 billion yuan in 2024, with a focus on enhancing its SiC/GaN product capabilities [50][51]

氮化镓激光二极管是基于第三代半导体材料氮化镓（ GaN ）的光电器件，具有高效率、高功率、宽波长范围等优点，通过电子空穴复合产 生激光，主要发射紫光、蓝光、绿光等短波长激光。 市场前景广阔 ： GaN 激光二极管是高价值、高利润的产品。其增长受到高科技设备日益普及的推动，这些设备涵盖光学显示器、光存储、 工业以及医疗设备等领域，为 GaN 激光二极管提供了广阔的应用空间。 行业竞争格局复杂 ： 随着市场需求的不断变化，消费者对产品性能、质量和价格的要求也日益提高。从单模和双模激光二极管到具有不同 波长和功率水平的产品，企业需要不断创新并扩展其产品组合，才能在市场中保持竞争力 。 政策和法规环境 推动 ： GaN 激光二极管的核心挑战集中在材料缺陷控制和工艺复杂性上， GaN 激光二极管必须在外延生长、热管理、成 本控制等方面不断取得突破 。 根据 QYResearch 最新调研报告显示， 预计到 2031 年全球规模将达到 1758.43 百万美元 ， 2025 至 2031 期间年复合增长率为 7.71% 。 就产品类型而言，目前 多模 是最主要的细分产品，占据大约 72.1% 的收入份额。 全球范围内，氮 ...

Group 1 - The stock price of Hongwei Technology on July 31 was 26.58 yuan, down 1.02 yuan or 3.70% from the previous trading day [1] - The trading volume on that day was 5.12 billion yuan, with a turnover rate of 8.91% [1] - Hongwei Technology's main business includes the research, production, and sales of semiconductor power devices, which are widely used in industrial control, new energy, and consumer electronics [1] Group 2 - Hongwei Technology announced that its shareholder, Hongzhong Consulting, reduced its holdings by 820,000 shares, accounting for 0.39% of the company's total share capital, and the reduction plan has been completed [1] - The company's board of directors nominated Deng Erping as a candidate for a non-independent director to fill the vacancy left by the resignation of the previous director [1] Group 3 - On July 31, the net outflow of main funds was 34.0571 million yuan, representing 0.6% of the circulating market value [1]