随着2025年三季度业绩预告逐渐进入密集披露期，A股市场将迎来新一轮"业绩验证潮"。 在全球景气度持续提升的背景下，部分A股半导体企业的前三季度业绩亮眼。 Wind数据显示，截至记者发稿，已有超过40家上市公司发布三季度业绩预告。从业绩预告类型来看， 今年前三季度业绩预喜（预增、略增、扭亏）公司数量占比在七成以上，显示出强劲的业绩增长势头。 其中，广东明珠、英联股份等公司更是以超10倍的业绩增幅，成为市场关注的焦点。 最高业绩增幅超16倍 从目前已经发布的业绩预告来看，广东明珠、英联股份等公司前三季度业绩增幅居前。 英联股份9月29日晚发布2025年前三季度业绩预告，预计公司前三季度实现归属于上市公司股东的净利 润3450万—3750万元，同比增长1531.13%—1672.97%。 公司表示，报告期内，公司营业收入和利润均实现了增长，主要来自于快消品金属包装易开盖板块的贡 献。报告期内，公司金属包装板块智能化、自动化产线的快速响应供货能力和生产产品质量的稳定性等 核心优势进一步显现，国内外市场占有率提升，公司营业收入实现稳步增长。同时，公司通过产品结构 调整等精益化管理方式提升了经营管理效率，实现降本增效， ...

随着2025年三季度业绩预告逐渐进入密集披露期，A股市场将迎来新一轮"业绩验证潮"。 数据显示，截至记者发稿，已有超过40家上市公司发布三季度业绩预告。从业绩预告类型来看，今年前 三季度业绩预喜（预增、略增、扭亏）公司数量占比在七成以上，显示出强劲的业绩增长势头。其中， 广东明珠、英联股份等公司更是以超10倍的业绩增幅，成为市场关注的焦点。 最高业绩增幅超16倍 从目前已经发布的业绩预告来看，广东明珠、英联股份等公司前三季度业绩增幅居前。 英联股份9月29日晚发布2025年前三季度业绩预告，预计公司前三季度实现归属于上市公司股东的净利 润3450万—3750万元，同比增长1531.13%—1672.97%。 公司表示，报告期内，公司营业收入和利润均实现了增长，主要来自于快消品金属包装易开盖板块的贡 献。报告期内，公司金属包装板块智能化、自动化产线的快速响应供货能力和生产产品质量的稳定性等 核心优势进一步显现，国内外市场占有率提升，公司营业收入实现稳步增长。同时，公司通过产品结构 调整等精益化管理方式提升了经营管理效率，实现降本增效，公司综合毛利率增长。此外，报告期内， 公司确认增值税加计抵减损益对本期利润产生 ...

截至发稿，杨坤累计任职时间5年354天，现任基金资产总规模147.76亿元，任职期间最佳基金回报 81.38%， 任职期间最差基金回报-32.3%。 风险提示：市场有风险，投资需谨慎。本文为AI大模型自动发布，任何在本文出现的信息（包括但不 限于个股、评论、预测、图表、指标、理论、任何形式的表述等）均只作为参考，不构成个人投资建 议。 资料显示，江苏宏微科技股份有限公司位于江苏省常州市新北区新竹路5号，成立日期2006年8月18日， 上市日期2021年9月1日，公司主营业务涉及IGBT、FRED为主的功率半导体芯片、单管、模块和电源模 组的设计、研发、生产和销售。主营业务收入构成为：模块(封装)73.83%，单管(封装)22.67%，芯片 1.72%，受托加工业务1.62%，其他0.15%。 从基金十大重仓股角度 数据显示，万家基金旗下1只基金重仓宏微科技。万家国证2000ETF（159628）二季度持有股数19.01万 股，占基金净值比例为0.41%，位居第十大重仓股。根据测算，今日浮亏损失约28.33万元。 万家国证2000ETF（159628）成立日期2022年6月29日，最新规模8.09亿。今年以来收 ...

10月9日，宏微科技（维权）涨5.82%，成交额4.35亿元。两融数据显示，当日宏微科技获融资买入额 6486.13万元，融资偿还3898.84万元，融资净买入2587.29万元。截至10月9日，宏微科技融资融券余额 合计3.98亿元。 融资方面，宏微科技当日融资买入6486.13万元。当前融资余额3.97亿元，占流通市值的6.66%，融资余 额超过近一年90%分位水平，处于高位。 融券方面，宏微科技10月9日融券偿还242.00股，融券卖出1600.00股，按当日收盘价计算，卖出金额 4.48万元；融券余量2.13万股，融券余额59.60万元，超过近一年70%分位水平，处于较高位。 资料显示，江苏宏微科技股份有限公司位于江苏省常州市新北区新竹路5号，成立日期2006年8月18日， 上市日期2021年9月1日，公司主营业务涉及IGBT、FRED为主的功率半导体芯片、单管、模块和电源模 组的设计、研发、生产和销售。主营业务收入构成为：模块(封装)73.83%，单管(封装)22.67%，芯片 1.72%，受托加工业务1.62%，其他0.15%。 截至6月30日，宏微科技股东户数1.09万，较上期增加6.16%；人 ...

宏微科技在2025年PCIM Asia展会上展示了其在GaN、SiC等领域的布局，致力于为AI数据中心提供高效 供电解决方案。公司发布多款产品，包括适用于不同功率等级的数据中心的IGBT+SiC混合模块，以及 响应AI服务器需求的650V GaN新品。宏微科技计划继续推出SiC和GaN新品，适用英伟达800V HVDC 架构，迎合全球功率半导体市场的快速增长。公司承诺通过技术创新推动AIDC行业的能效提升与发 展。(证券时报) ...

招股书显示，尚鼎芯是一家无晶圆厂功率半导体供货商，专门从事定制化功率器件产品的开发及供应。公司为客户量身定制技术应用解决方案，提供定制的 功率器件，用于安装在终端用户最终使用的电气设备及电气产品的电路板上，旨在实现特定性能或优化该等产品的功能。尚鼎芯于往绩记录期间提供的产品 主要是MOSFET，其次是IGBT、GaN MOSFET及SiC MOSFET，该等产品主要由公司的技术专家设计、定制及╱或开发，专门按照客户要求量身定制，用 于其下游产品。 尚鼎芯提供的产品用途广泛，包括电源转换器和电池管理系统。应用范围涵盖消费电子、工业控制、汽车电子、新能源及储能、医疗设备等应用场景，广泛 用于扫地机器人、手持电动工具、无人机、各种消费电子适配器、LED照明、户外储能等应用产品。 智通财经APP获悉，深圳市尚鼎芯科技股份有限公司(简称：尚鼎芯)于4月3日所递交的港股招股书满6个月，于10月3日失效。 ...

Company Overview - InnoSilicon is a leading global manufacturer of Gallium Nitride (GaN) power semiconductors, operating under an Integrated Device Manufacturer (IDM) model. The company is the first in the world to achieve mass production of 8-inch silicon-based GaN wafers and is one of the few companies offering a full voltage range of GaN semiconductor products from 15V to 1200V. According to Frost & Sullivan, InnoSilicon ranked first in global GaN power semiconductor companies by revenue in 2023, with a market share of 33.7% [1][2][3]. Business, Products, and Technology Analysis Main Products - InnoSilicon's product line includes GaN wafers, GaN discrete devices, integrated chips, and modules. The GaN wafers are produced on an 8-inch GaN-on-Si production line, supporting high, medium, and low voltage requirements. The GaN discrete devices cover a voltage range of 15V-1200V, including GaN HEMT, catering to various application scenarios. The integrated chips, such as the ISG612XTD SolidGaN IC series, combine GaN devices, gate drivers, and multiple protection circuits, achieving low on-resistance and high switching frequency [1][2]. Technical Features - InnoSilicon has significant technical advantages, being the first to achieve large-scale production of 8-inch silicon-based GaN wafers, which offers notable efficiency and cost control compared to 4-inch and 6-inch lines. The company holds over 800 patents, and its products exhibit high reliability, low on-resistance, low gate charge, and compact packaging. The third-generation 700V enhanced GaN power device series is set to launch in 2025, featuring a 30% reduction in chip area and a 20-30% improvement in switching performance [2][3]. Production Capacity - InnoSilicon currently has a monthly production capacity of 13,000 8-inch GaN wafers, making it the largest production base for 8-inch GaN wafers globally. The company plans to increase this capacity to 20,000 wafers per month by the end of 2025, with a long-term goal of reaching 70,000 wafers per month [3]. Downstream Applications - InnoSilicon has established close partnerships with major smartphone manufacturers like OPPO, vivo, and Xiaomi, with its products used in mobile OVP and fast charging applications. In 2022, the company successfully integrated its 40V bidirectional VGaN™ chip into OPPO smartphones, marking a significant milestone. In the electric vehicle sector, CATL became InnoSilicon's largest customer in 2022, with sales reaching 190 million yuan in 2023. The company also collaborates with other EV manufacturers for automotive-grade products [3][4]. Industry Outlook - The global GaN power semiconductor market has rapidly grown from 139.4 million yuan in 2019 to 1,759.5 million yuan in 2023, with a compound annual growth rate (CAGR) of 88.5%. The market is expected to experience exponential growth, projected to reach 3,227.7 million yuan in 2024 and 50,141.9 million yuan by 2028, with a CAGR of 98.5%. Consumer electronics and electric vehicles are anticipated to be the two major application scenarios during this period [5]. Competitive Landscape - The global power semiconductor industry is highly concentrated, with the top ten companies holding a combined market share of 66.9%. InnoSilicon's revenue from GaN power semiconductor business reached 592.7 million yuan in 2023, ranking first globally with a market share of 33.7%. The top five companies collectively account for 92.8% of the market share, with InnoSilicon being a key player alongside competitors like Infineon, EPC, Navitas, and Power Integrations [8][10].

消息面上，核聚变赛道迎来新消息。10月1日，位于安徽合肥的紧凑型聚变能实验装置BEST(紧凑型聚 变能实验装置)项目建设取得关键突破。BEST装置主机关键部件——杜瓦底座研制成功并顺利完成交 付，成功精准落位安装在BEST装置主机大厅内，标志着项目主体工程建设步入新阶段。民生证券指 出，建议关注IGBT开关赛晶科技等。公开资料显示，赛晶科技在脉冲功率领域展现出独特的技术优 势。凭借25年的专业积累，公司已成为可控核聚变等领域的重要技术供应商，为全球80多个项目提供了 定制化解决方案，包括多个国际知名的核聚变研究项目。 中泰国际指出，"十五五"期间的特高压项目以柔性输电技术为主，赛晶为国产输配电元器件龙头供应 商，在手订单充足，相关收入稳步增长；输配电元器件国产化率提升有利于支撑毛利率；同时受益于国 产功率半导体渗透提升。自研IGBT芯片业务收入爆发式增长。此前9月8日，公司瑞士子公司 AstrolElectronic AG(Astrol)宣布与核聚变领域的一家创新企业展开合作，该企业将采用Astrol的功率开关 解决方案，用于控制尖端核聚变系统中的电流。 赛晶科技(00580)涨超8%，截至发稿，涨8.47% ...

Core Viewpoint - The article highlights Toshiba's advancements in power semiconductor technology, particularly in silicon carbide (SiC) devices, showcased at the 2025 PCIM Asia exhibition, emphasizing their collaboration with Basic Semiconductor to enhance innovation in the industry [1][3][9]. Group 1: Toshiba's SiC Technology - Toshiba's SiC product line includes voltage ratings of 1200V, 1700V, 2200V, and 3300V, all of which are in mass production and applied in sectors such as rail transportation, renewable energy, and industrial inverters [3][4]. - The unique feature of Toshiba's SiC technology is the embedded Schottky Barrier Diode (SBD) design, which reduces the forward voltage drop (VF) to approximately 1.35V, significantly lowering power loss and enhancing device reliability [3][4]. - Toshiba's SiC devices also offer a wide gate control range (-10V to 25V) and a high threshold voltage (3-5V), providing flexibility and reducing the risk of false triggering [3]. Group 2: IEGT Technology - Toshiba pioneered the injection-enhanced gate transistor (IEGT) technology in the late 1990s, addressing high voltage IGBT challenges and establishing a leading position in high voltage power devices [5][6]. - The IEGT product line covers voltage ratings from 3300V to 6500V, with current ratings from 750A to 3000A, and is being developed for 5000A products, primarily used in flexible DC transmission systems [6][7]. Group 3: Lithium Titanate Battery Technology - Toshiba's lithium titanate battery technology, although less common, offers unique advantages such as excellent safety performance and the ability to operate in extreme temperatures, making it suitable for critical applications like UPS systems in semiconductor manufacturing [8]. - The lithium titanate batteries are compact and have a lifespan of over ten years, contrasting with traditional lead-acid batteries [8]. Group 4: Strategic Collaboration - Toshiba's strategy focuses on leveraging its core strengths in semiconductor chip design and manufacturing while collaborating with partners like Basic Semiconductor for module packaging and customer resources [9][12]. - The partnership has led to the development of advanced power modules that utilize both companies' technologies, enhancing performance in various applications [9]. Group 5: Future Outlook - Toshiba plans to launch its fifth-generation T5G SiC products by 2026, which will be based on 8-inch wafers, promising improvements in performance and cost [11][12]. - The company emphasizes a balanced approach between technological innovation and market demand, ensuring long-term reliability across its MOS, IGBT, and SiC product lines [12].

Core Viewpoint - Silicon Carbide (SiC) is gaining attention as the next-generation power semiconductor material due to its superior properties compared to silicon (Si), particularly in high-temperature and high-pressure applications [1][3]. Group 1: Historical Progress and Development - Significant advancements in SiC power devices have been made since the 2000s, overcoming early challenges related to defects in the crystal structure [3][4]. - The defect density in SiC wafers has been reduced by an order of magnitude, thanks to improved simulation technologies and experimental efforts [3][4]. - The price of SiC wafers has dramatically decreased over the past 20 years, with 8-inch wafers now costing around 4,800 RMB, a reduction of nearly an order of magnitude [4]. Group 2: Market Expansion and Key Players - The year 2001 marked a turning point for SiC with Infineon Technologies leading the small-scale production of SiC diodes, although the market was limited at that time [6]. - The introduction of SiC transistors by Cree (now Wolfspeed) and ROHM in 2010 was a significant milestone, but the market size remained minimal [6]. - Tesla's adoption of SiC power devices in its electric vehicles in 2018 catalyzed market expansion, leading to increased awareness and adoption of SiC technology in the automotive sector [6][7]. Group 3: Current Market Trends and Future Outlook - The SiC market is expected to reach approximately 30 billion RMB by 2024, driven by the growing demand for electric vehicles and advancements in railway vehicle applications [7]. - China has emerged as a leader in SiC wafer production, surpassing Japan, the US, and Germany in wafer size, quality, and cost reduction [9]. - Despite China's rapid development in SiC, Japanese companies still lead in advanced device development, maintaining a competitive edge in the power device ecosystem [9][10]. Group 4: Challenges and Technical Issues - A persistent issue for SiC is the high defect density at the SiC and SiO2 interface, which hinders its full potential [15][16]. - The resistance of SiC is currently two to three times higher than ideal values, indicating a need for breakthroughs in research to improve performance and reduce costs [15][16]. - Reliability concerns are becoming increasingly important as SiC power devices gain popularity, necessitating the design of protective circuits to prevent damage during overload conditions [15][16].