Core Viewpoint - The article highlights the upcoming "Electric Transportation & Digital Energy SiC Technology Application and Supply Chain Upgrade Conference" in Shanghai, focusing on the advancements and challenges in the silicon carbide (SiC) technology industry [1][2]. Group 1: Conference Details - The conference will take place on May 15 and will feature key industry players such as Mitsubishi Electric, STMicroelectronics, Wolfspeed, and others [1][2]. - The event will include two main themes: "Digital Energy SiC Technology Application Seminar" and "Electric Transportation SiC Technology Application Seminar" [2]. - A dedicated exhibition area for SiC and digital energy solutions will be set up at the conference [2]. Group 2: Participation and Presentations - Zhongdian Guojinan South has confirmed its participation, with its application manager presenting on the current status and research progress of SiC MOSFET technology [1]. - The conference aims to foster discussions on industry development and innovation breakthroughs among leading companies and institutions [2].

Group 1 - The conference "Electric Transportation & Digital Energy SiC Technology Application and Supply Chain Upgrade Conference" will be held in Shanghai, featuring key industry players including TianKe HeDa, Mitsubishi Electric, and STMicroelectronics [2][3][5] - TianKe HeDa's CTO Liu Chunjun will present on the progress of 8-inch SiC substrates and epitaxy technology, highlighting the company's breakthroughs in silicon carbide materials [3][4] - The report will focus on the industrialization progress of 8-inch conductive SiC substrates and key process breakthroughs in 8-inch conductive epitaxy technology, including optimized substrate thickness and defect control [4] Group 2 - TianKe HeDa aims to achieve small-scale production of 8-inch conductive substrates and epitaxy by 2024, with substrate thickness optimized to 350μm, supporting cost reduction for high-voltage devices [4] - The company has made significant advancements in defect control, addressing industry challenges such as polytype defects and dislocation clusters, ensuring reliability for automotive-grade devices [4] - The conference will also feature discussions on core challenges and innovative breakthroughs in the industrialization process of silicon carbide technology, with dedicated sessions on digital energy and electric transportation applications [4][5]

插播： 倒计时6天！ 三菱 电机、 意法半导体、Wolfspeed、三安半导体、天科合达、元山电子、 大族半导体、香港大学、长飞先进、宏微科技、利普思、昕感科技、国扬电子、国基南方、芯长征、合盛新材料、瀚天天成、芯研科、国瓷功能 材料、季华恒一等 邀您参加上海"电动交通&数字能源SiC技术应用及供应链升级大会"，点击文章底部 "阅读原文" 即可报名参会。 5月15日，"行家说三代半"将在上海召开"电动交通&数字能源SiC技术应用及供应链升级大会"，届时 三菱电机、意法半导体、Wolfspeed、三安半导 体 等众多领军企业也将在会议上公布最新成果，欢迎大家扫码参会： 英飞凌 英飞凌此次重点展示了多项碳化硅新 技术， 倍受业界瞩目： 5月6日至8日 ， PCIM Europe 2025在德国顺利举办。"行家说三代半"发现，本次展会上汇聚了众多SiC行业领军企业，其中英飞凌、博世、 Wolfspeed、罗姆半导体等企业展示了多项创新技术，引起了业界的高度关注。 全新CoolSiC™ JFET 该系列产品拥有极低的导通损耗、出色的关断能力和高可靠性，可在各种工业和汽车应用中实现可靠且高效的系统性能，包括固态断路器（ ...

插播： 倒计时7天！ 三菱电机、意法半导体、Wolfspeed、三安半导体、天科合达、元山电子、大 族半导体、香港大学、长飞先进、宏微科技、利普思、昕感科技、国扬电子、国基南方、芯长征、合 盛新材料、瀚天天成、芯研科、国瓷功能材料等邀您参加上海"电动交通&数字能源SiC技术应用及供 应链升级大会"，点击文章底部 "阅读原文" 即可报名参会。 5月15日，" 电动交通&数字能源SiC技术应用及供应链升级大会 "即将在上海召开， 为回馈广大行业同仁的关注与支 持， 助力产业交流，"行家说三代半"特别发起 答题赠票 活动→ 活动规则 欢迎扫码上方二维码答题，抢占最后席位！ 机会难得，不容错过！ 会议临近，"行家说三代半"在此简单地为大家介绍一下 大会亮点 ： 会议同期，行家说还将重点打造"SiC半导体全产业链精品展示区"，将广邀业内知名的企业，全面展示产业链 的最新技术，以期向观众呈现一场集行业交流、渠道联动、资源聚合于一体的行业顶尖盛会。 1. 答对 10 道碳化硅相关题目，即可获得 5 月 15 日上海碳化硅活动门票 1 张（价值 399 元），活动详情可点 击顶部活动海报查看。 2. 本次答题活动共设置 30 ...

Core Viewpoint - The article highlights the acceleration of GaN (Gallium Nitride) projects in the semiconductor industry, specifically focusing on APRO Semicon's new factory in South Korea and Polymatech's investment in India, indicating a growing trend in GaN technology development and production capacity [1][4]. Group 1: APRO Semicon - APRO Semicon's new factory in Gumi has commenced mass production of 8-inch GaN epitaxial wafers, with an annual capacity of 20,000 wafers and projected sales of 10 billion KRW (approximately 0.5 million RMB) within six months [2][4]. - The factory was completed in December of the previous year and produces silicon-based GaN epitaxial wafers for 650V power semiconductors [2]. - APRO Semicon has previously developed epitaxial wafers for 1200V GaN devices, capable of withstanding breakdown voltages of 1600V, with a growth thickness and uniformity reaching 99% [2][5]. - The company is enhancing its GaN business by collaborating with DB HiTek for supply plans and establishing a design team for next-generation GaN power semiconductor devices [2][5]. Group 2: Polymatech - Polymatech, an Indian semiconductor manufacturer, is investing 1.3 billion USD (approximately 9.3 million RMB) to build a new GaN chip factory in Chhattisgarh [6]. - The local government is providing policy support, tax incentives, infrastructure development, and special facilities to boost the electronics and semiconductor industry under the "Make in India" and "Digital India" initiatives [6]. - Polymatech aims to enhance India's semiconductor and telecom manufacturing capabilities and is prepared to offer next-generation solutions for the global 5G and 6G ecosystems [6].

插播： 倒计时7天！ 三菱电机、意法半导 体、Wolfspeed、三安半导体、天科合达、元山电子、大族半导体、香港大学、长飞先进、宏微科 技、利普思、昕感科技、国扬电子、国基南方、芯长征、合盛新材料、 瀚天天成、 芯研科、 国瓷功 能材料等邀您参加上海 "电动交通&数字能源SiC技术应用及供应链升级大会"，点击文章底部 "阅读 原文" 即可报名参会。 除三安半导体外，会议还邀请了 三菱电机、意法半导体、Wolfspeed、天科合达、元山电子、大族半导 体、香港大学、长飞先进、宏微科技、利普思、昕感科技、国扬电子、国基南方、芯长征、合盛新材料、 瀚天天 成、 芯研科、 国瓷功能材料等 行业领 军企业&机构参与，将共论产业发展，再 谱产业新章。 大会现已开放报名渠道，因会议 名额有限 ，先到先得，欢迎各位行 家 扫码报名 参会，期待与你在上海相会！ 本文发自【行家说三代半】，专注第三代半导体（碳化硅和氮化镓）行业观察。 其他人都在看： 长城为何联手英诺赛科？解密背后的GaN技术创新 5月15日， "行家说三代半"将在上海召开 "电动交通&数字能源SiC技术应用及供应链升级大会" ，三安半导体 已正式确认 出席本次 ...

Core Viewpoint - The article highlights the rapid advancements in the production of silicon carbide (SiC) substrates by several domestic companies, indicating a significant acceleration in the commercialization process of 8-inch SiC technology. Group 1: Company Developments - Zhongtou Tianke has successfully launched high-quality 6-8 inch SiC substrates and epitaxial layers to the market, achieving production line establishment in just 19 months and developing a complete technology route with independent intellectual property rights [2]. - Hoshine Silicon Industry has begun small-scale production of 8-inch SiC substrates, with a focus on accelerating the mass production process, while their 6-inch substrates have achieved a crystal yield of over 95% [3][5]. - Superchip Star has initiated mass production of 8-inch SiC substrates, overcoming several key technical challenges and establishing itself as a supplier capable of mass production in the domestic market [6]. Group 2: Industry Trends - The article notes that the SiC industry is in a dynamic phase with significant potential, driven by emerging application markets, and emphasizes the importance of technological advancements in substrate production [6]. - The overall trend indicates that multiple companies are enhancing their capabilities in SiC substrate production, which is crucial for applications in sectors such as renewable energy and electric vehicles [2][4].

Core Viewpoint - The article discusses the significant advancements in GaN (Gallium Nitride) technology for server power supplies, highlighting its efficiency and potential to address the energy consumption challenges faced by global data centers [4][10]. Group 1: Industry Context - The global data center sector is experiencing a surge in power consumption, projected to reach 3000 TWh by 2030, which will account for 10% of the world's total electricity consumption [4]. - Traditional silicon-based power supplies are becoming less efficient, particularly in the 20%-50% load range, where their conversion efficiency is only 90%-94% [4][5]. Group 2: Technological Advancements - InnoGaN technology from InnoSpectra has enabled power supplies to achieve over 96% conversion efficiency, surpassing the highest 80PLUS Titanium standard [4][5]. - The GaN-based power supplies can reduce energy losses by over 30% compared to traditional power supplies, particularly in the critical load range [5][7]. Group 3: Economic Impact - Implementing GaN power solutions can save over 2 million yuan annually in electricity costs for every 10,000 servers, while also reducing heat generation by 50% and cooling energy consumption by 18% [7]. - A 1% increase in efficiency in a 10MW intelligent computing center can lead to significant savings in electricity costs [4]. Group 4: Product Innovations - The ISG612XTD SolidGaN IC, a high-power GaN product, is a key component in achieving these efficiency gains, featuring a TO-247-4 package and a voltage rating of 700V [9]. - The INN100EA035A GaN power transistor, with a dual-side cooling design, enhances thermal performance and efficiency, making it suitable for AI server power and GPU applications [15][17]. Group 5: Future Directions - InnoSpectra is expanding its GaN technology offerings, including a 2kW-8kW power solution matrix for AI server 48V power architectures, which supports high-density layouts and meets stringent cooling requirements [10][12]. - The development of a 100V half-bridge driver, INS2002FQ, further complements the GaN solutions, enabling high efficiency and compact designs for various applications [18].

Core Viewpoint - The article highlights the advancements in 12-inch silicon carbide (SiC) technology, showcasing the progress made by various companies in the semiconductor industry and the potential applications in emerging markets such as AR glasses and laser devices [2][3][12]. Group 1: Equipment and Technology Developments - Seven SiC companies have reported advancements in 12-inch technology, focusing on laser cutting and resistance methods [3]. - Major companies like Dazhu Semiconductor and Xihu Instruments have made significant progress in overcoming challenges related to 12-inch crystal growth and processing [4]. - China Electronics Technology Group has developed a comprehensive solution for 8 to 12-inch SiC material processing, significantly reducing processing time and costs [9]. Group 2: Substrate Developments - Six SiC companies have showcased 12-inch SiC ingots and substrates, all based in China, indicating a strong domestic focus on this technology [12]. - Companies such as Tianyue Advanced and ShuoKe Crystal have achieved breakthroughs in 12-inch semi-insulating and optical-grade substrates, targeting markets like AR glasses [16]. - The development of non-conductive substrates is expected to create new opportunities in various applications, including advanced packaging and thermal management [17]. Group 3: Market Potential and Future Outlook - The potential market for SiC substrates in applications like TF-SAW filters and laser cooling substrates is projected to reach thousands of units, contingent on market demand [17]. - The report emphasizes the need for corresponding market growth to realize the full potential of SiC substrates, highlighting the importance of cost-effectiveness and performance [17]. - The "Third Generation Semiconductor Industry 2025 Q1 Quarterly Report" provides in-depth insights into the latest technological advancements and market trends, aiding companies in strategic planning [17].

插播： 英诺赛科、能华半导体、致能半导体、京东方华灿 光电、镓奥科技、鸿成半导体、中科无线半导体等已确认参编《2024-2025氮化镓（GaN）产业调 研白皮书》，参编咨询请联系许若冰（hangjiashuo999）。 5月15日， "行家说三代半"将在上海召开"电动交通&数字能源SiC技术应用及供应链升级大会"， 元山电子 已正式确认出席本次大会。 届时，元山电子应用工程总监李祥龙将出席，并带来 《碳化硅模块的技术进展与挑战》 的主题 报告， 深度解析碳化硅技术在电动交通与数字能源领域的前沿突破与产业化实践，分享元山电子在技术研发 与规模化量产中的核心经验。 李祥龙总监的演讲将围绕元山电子在碳化硅功率模块领域的技术优势展开，该公司具备独特的 研发优势 ✦自主搭建"力-热-电-磁"协同设计平台： 多物理场协同设计、DOE快速工艺验证、测试数据库 积累、快速原型快速优化、应用验证指导设计优化； ✦工 艺优化： 超低杂感设计、优异的电性能设计结合高效强化散热与均温设计； ✦测试验证： 建有测试中心，可自主完成车规级碳化硅功率模组测试验证； 目 前 ， 元 山 电 子 位 于 济 南 的 一 期 碳 化 硅 模 块 ...