Core Viewpoint - NVIDIA has revised its plans for the low-power DRAM (LPDDR) module SOCAMM, abandoning the SOCAM1 project in favor of SOCAM2, which is currently being tested with three memory manufacturers [1][2]. Group 1: SOCAMM Development - NVIDIA has started sample testing for SOCAMM2 with Samsung, SK Hynix, and Micron, shifting focus from SOCAM1 due to technical issues that prevented large-scale orders [1][2]. - SOCAMM aims to provide high-capacity memory at lower costs and power consumption compared to high bandwidth memory (HBM) [1]. Group 2: Technical Specifications - SOCAMM2 features the same 694 I/O ports as SOCAM1 but offers a data transfer speed of 9,600 MT/s, surpassing SOCAM1's 8,533 MT/s [2]. - The power consumption of SOCAMM is reported to be one-third lower than that of standard DRAM-based RDIMM server memory modules [2]. Group 3: Market Implications - The delay in SOCAMM1's launch has created opportunities for Samsung and SK Hynix, as they are now on equal footing with Micron in the development of SOCAMM2 [3]. - SOCAMM2 is expected to begin mass production in early next year, with increasing adoption anticipated as the demand for memory solutions to address data bottlenecks in AI computing rises [3].

Group 1 - The core viewpoint of the article highlights the stagnation of commercialization plans for CXL memory due to insufficient demand, despite technical readiness for mass production [1] - Major manufacturers like Samsung Electronics and SK Hynix are facing ongoing challenges in bringing next-generation memory technologies to market, particularly CXL and PIM [1][2] - The strong demand for High Bandwidth Memory (HBM), driven by NVIDIA's focus on this technology in its accelerator products, has delayed the application of CXL and PIM technologies [2] Group 2 - NVIDIA dominates the AI data center GPU market with an estimated market share of about 92% last year, making it difficult for competitors like AMD and Broadcom to gain market share [2] - Concerns are rising that Chinese companies may achieve commercialization of CXL and PIM technologies first, potentially altering the global competitive landscape [2] - Industry insiders suggest that proactive measures are needed to build an ecosystem conducive to future commercialization opportunities, as the current situation reflects a waiting game among stakeholders [3]

Core Viewpoint - Samsung Electronics is struggling with the mass production strategy for the next-generation NAND V10, facing delays and uncertainties in demand and technology introduction [2][5]. Group 1: NAND V10 Production Challenges - Samsung's V10 NAND features a stacking layer count of 430, surpassing the current V9's 290 layers by 100 layers [2]. - The company initially planned to start mass production investment in the second half of this year, but this has been postponed to the first half of next year due to supply chain finalization delays [2][5]. - The introduction of new low-temperature etching processes has proven difficult, with evaluations indicating that immediate application for mass production is unlikely [3][4]. Group 2: Equipment and Cost Factors - Samsung is collaborating with major equipment manufacturers like Lam Research and TEL to assess low-temperature etching equipment, but the results have led to a reevaluation of the approach [3][4]. - The investment cost for new equipment is a significant factor in delaying the V10 NAND mass production, as diversifying suppliers may reduce the utilization rate of existing equipment [4]. Group 3: HBM3E Supply Agreement with AMD - Samsung has secured a supply agreement with AMD for the fifth-generation 12-layer HBM3E memory, which will be used in the upcoming MI350 AI accelerator [6]. - This agreement marks a breakthrough for Samsung, especially after previous setbacks against competitors like NVIDIA [6]. - The new HBM3E chip offers over 50% improvements in performance and capacity compared to the previous eight-layer version, supporting a bandwidth of up to 1,280GB/s [7]. Group 4: Future HBM4 Developments - HBM4 is seen as a critical battleground for market dominance among Samsung, SK Hynix, and Micron, with plans for mass production by the end of this year [8]. - Samsung aims to regain its competitive edge in the HBM market by adopting advanced sixth-generation process technology, which could provide significant advantages over competitors using fifth-generation technology [8].