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国泰海通:NPU+3DDRAM或成端侧AI下一代技术趋势 推荐兆易创新(603986.SH)
智通财经网· 2025-05-27 08:23
Group 1 - The core viewpoint of the report is that the transition from 2D to 3D architecture in DRAM is essential due to the challenges faced in further miniaturization of DRAM processes, with hybrid bonding technology representing the future path for 3D DRAM [1] - The report highlights that the current bottleneck in AI edge inference speed is memory bandwidth rather than computing power, and that 3D DRAM can significantly enhance transmission efficiency [1][3] - The use of NPU as a co-processor combined with 3D DRAM is likely to be the next trend in edge technology, with companies like Zhaoyi Innovation (兆易创新) being recommended for investment [1][2] Group 2 - AI applications are diversifying rather than conforming to a unified model, with new hardware technologies being developed to support this trend, particularly through the use of smaller models that outperform larger ones [2] - The report indicates that the memory bandwidth limitation is significantly greater than the computational limitation, as demonstrated by the Snapdragon 8 GEN3 example, where memory bandwidth constraints are evident [3] - Major players in the industry, including Zhaoyi Innovation and its subsidiaries, as well as Taiwanese storage IDM Winbond and Qualcomm, are focusing on the 3D DRAM and NPU solution, indicating a clear technological trend [3]
未知机构:国泰海通电子高通NPU3DDRAM专家交流takeaways-20250506
未知机构· 2025-05-06 01:40
Summary of Qualcomm NPU + 3D DRAM Expert Exchange Takeaways Industry and Company Involved - The discussion revolves around **Qualcomm** and its collaboration with domestic suppliers in the **semiconductor** industry, specifically focusing on **NPU (Neural Processing Unit)** and **3D DRAM** technologies. Core Points and Arguments 1. **Collaboration Timeline**: Qualcomm officially initiated the project in Q1 of this year, completing validation with domestic suppliers. The expectation is to return the chips by the end of June for packaging, testing, yield, and functionality evaluation. Samples are planned to be sent to smartphone manufacturers between February and March next year, with a market launch anticipated in September to October [1]. 2. **Application Layer Upgrade**: The Qualcomm Snapdragon 8 Elite flagship model is equipped with LPDDR5x, offering a bandwidth of 85GB/s. After upgrading to 3D DRAM, the bandwidth is expected to exceed 1TB. Currently, the products under validation have a bandwidth of 256GB/s, representing a threefold increase in speed. The total cost increase is approximately $60, making it suitable for high-end models that utilize computational photography and AI [2][3]. 3. **WoW Solution Advantages**: Compared to Winbond's CUBE, the WoW solution utilizes hybrid bonding, which eliminates micro bumps, resulting in a thinner stacking height. This provides advantages in memory bandwidth and power consumption. Additionally, the yield rate for stacks exceeding four layers is superior to that of CUBE [4]. Other Important but Possibly Overlooked Content - The discussion highlights the competitive edge of Qualcomm's technology in the semiconductor market, particularly in high-performance applications, which may present significant investment opportunities in the sector as demand for advanced mobile computing continues to grow [5].