Core Insights - The article discusses the shift in memory technology for Microcontroller Units (MCUs) as embedded flash memory (eFlash) reaches its limits at 28nm, prompting manufacturers to explore new storage types like MRAM, PCM, RRAM, and FRAM [1][3][6]. Group 1: Industry Trends - The industry is moving towards new types of memory to enhance MCU performance, with MRAM being particularly favored due to its diverse types and broad application prospects [1][6]. - Major companies such as Huawei, TSMC, Samsung, Intel, and NXP are investing in MRAM technology, indicating strong industry interest and potential growth [1][6][19]. Group 2: Technical Advantages of MRAM - MRAM offers a combination of speed, low power consumption, and high durability, making it suitable for various applications, including automotive and AI accelerators [10][15][20]. - The technology allows for word-level erase and program capabilities, providing an energy-efficient non-volatile memory solution [15][16]. Group 3: Product Developments - Infineon has launched the AURIX TC4x series MCU using RRAM technology, while STMicroelectronics has introduced the xMemory Stellar series MCU with PCM [5][6]. - NXP's S32K5 MCU, the first 16nm FinFET+MRAM MCU, features high performance and low power consumption, integrating multiple ECUs into a single system [19][20]. - Renesas has released the RA8P1 series MCU with MRAM, emphasizing high performance and durability compared to traditional flash memory [22][28]. Group 4: Future Outlook - The article suggests that MRAM's integration into MCUs is accelerating, with TSMC making strides in the industrialization of third-generation SOT-MRAM technology [33]. - While MRAM presents significant advantages, it also faces challenges such as material complexity and sensitivity to strong magnetic fields, which may limit its application in certain environments [18][33].

Core Viewpoint - MRAM technology is emerging as a new generation of storage solutions, with Zhejiang Chituo Technology leading the development and manufacturing of MRAM chips in China, showcasing its latest products at the 2025 Shenzhen International Electronics Exhibition [1][9]. Group 1: MRAM Technology Advantages - MRAM utilizes magnetic materials to represent binary data, offering advantages such as high speed, low power consumption, high endurance, radiation resistance, and reliability [1]. - Chituo's MRAM products maintain data integrity for over ten years at 125°C, operate in a temperature range of -40 to +125°C, support over one trillion write cycles, and achieve a yield rate of 95% for large capacity arrays with sub-ppm failure rates [1]. Group 2: Embedded and Standalone MRAM - The embedded eMRAM can replace eFlash in MCU/SoC applications, with industry consensus indicating that 28/22nm will be the last cost-effective nodes for eFlash, while eMRAM can extend to 28nm and beyond [2]. - Chituo's eMRAM combines DRAM-like read/write speeds, non-volatility of flash memory, and SRAM-compatible interface characteristics, making it suitable for high-performance applications in industrial control, automotive electronics, identity authentication, and smart wearables [2]. Group 3: Product Series and Applications - Chituo's standalone MRAM is categorized into multiple series based on capacity, interface, and packaging, and has been adopted by leading users in various industries such as industrial control, power, and metering [5]. - The company is also at the forefront of research on the next generation of MRAM, specifically Spin-Orbit Torque MRAM (SOT-MRAM), and has proposed a groundbreaking device structure suitable for large-scale manufacturing [7]. Group 4: Company Overview - Zhejiang Chituo Technology is the first company in China to achieve mass production of MRAM, with a 12-inch MRAM pilot production line and a comprehensive platform for the research and industrialization of new storage chips [8].