公众号记得加星标⭐️，第一时间看推送不会错过。 在这些追赶者中，英特尔的转型动作最为激进，也最具系统性。作为曾经的半导体霸主，英特尔在制 程技术上的落后一度让外界质疑其代工业务的前景。但从2024年底到2025年，英特尔展现出的战略 调整清晰而坚决：不是放弃先进制程竞争，而是通过技术突破、客户争取和生态整合，试图在特定领 域重新建立竞争力。 先进制程：14A与High-NA EUV的技术豪赌 英特尔晶圆代工的核心筹码是其14A制程节点。这一节点被定位为对外部客户极具竞争力的选择，预 计在功耗效率和芯片密度方面实现显著提升。更关键的是，14A将成为全球首个在关键层采用高数值 孔径（High-NA）EUV光刻技术的制造节点。 英 特 尔 已 安 装 ASML 的 Twinscan EXE:5200B ， 这 是 业 界 首 款 采 用 0.55 数 值 孔 径 投 影 光 学 系 统 的 High-NA光刻设备。该设备能够以8nm的分辨率打印芯片，在50 mJ/cm²的剂量下每小时可处理175 片晶圆，并实现0.7纳米的套刻精度。相比之下，台积电和三星虽然也在测试High-NA设备的研发版 本，但尚未将其用于商业 ...

Core Insights - Samsung Electronics' wafer foundry business is recovering due to strong growth in the automotive semiconductor market, having secured orders from Tesla and Hyundai [1][2] - The company is supplying eMRAM, a non-volatile memory technology, to Hyundai, which is produced using a 14nm FinFET process [1] - eMRAM offers significant advantages over NAND flash memory, including a speed approximately 1000 times faster and low power consumption, driving demand in the automotive sector [1] Group 1 - Samsung has completed the development of its 14nm eMRAM process and plans to expand its product lineup to 8nm by 2026 and 5nm by 2027, with expected density and speed improvements of 30% and 33% respectively [2] - The company is rapidly expanding its automotive foundry business, having been selected by Tesla for the production of its next-generation AI semiconductor, AI6, which will utilize a 2nm process [2][3] - Samsung is also preparing to mass-produce 8nm MCUs for Hyundai, with plans to complete development by 2028 and start production by 2030 [2] Group 2 - There is a high likelihood that Samsung will win the contract for Hyundai's high-end 5nm autonomous driving chips, as the selection process is set to take place next year [3] - The project, "K-on-Device AI Semiconductor," has been delayed but is expected to favor Samsung due to its established capabilities in advanced process technologies [3] - Samsung's foundry has gained reference standards for various automotive chip processes, including advanced nodes (2nm, 5nm, and 8nm) and mature processes (14nm) [3]

Core Insights - The article discusses the shift in memory technology for Microcontroller Units (MCUs) as embedded flash memory (eFlash) reaches its limits at 28nm, prompting manufacturers to explore new storage types like MRAM, PCM, RRAM, and FRAM [1][3][6]. Group 1: Industry Trends - The industry is moving towards new types of memory to enhance MCU performance, with MRAM being particularly favored due to its diverse types and broad application prospects [1][6]. - Major companies such as Huawei, TSMC, Samsung, Intel, and NXP are investing in MRAM technology, indicating strong industry interest and potential growth [1][6][19]. Group 2: Technical Advantages of MRAM - MRAM offers a combination of speed, low power consumption, and high durability, making it suitable for various applications, including automotive and AI accelerators [10][15][20]. - The technology allows for word-level erase and program capabilities, providing an energy-efficient non-volatile memory solution [15][16]. Group 3: Product Developments - Infineon has launched the AURIX TC4x series MCU using RRAM technology, while STMicroelectronics has introduced the xMemory Stellar series MCU with PCM [5][6]. - NXP's S32K5 MCU, the first 16nm FinFET+MRAM MCU, features high performance and low power consumption, integrating multiple ECUs into a single system [19][20]. - Renesas has released the RA8P1 series MCU with MRAM, emphasizing high performance and durability compared to traditional flash memory [22][28]. Group 4: Future Outlook - The article suggests that MRAM's integration into MCUs is accelerating, with TSMC making strides in the industrialization of third-generation SOT-MRAM technology [33]. - While MRAM presents significant advantages, it also faces challenges such as material complexity and sensitivity to strong magnetic fields, which may limit its application in certain environments [18][33].

Core Viewpoint - MRAM technology is emerging as a new generation of storage solutions, with Zhejiang Chituo Technology leading the development and manufacturing of MRAM chips in China, showcasing its latest products at the 2025 Shenzhen International Electronics Exhibition [1][9]. Group 1: MRAM Technology Advantages - MRAM utilizes magnetic materials to represent binary data, offering advantages such as high speed, low power consumption, high endurance, radiation resistance, and reliability [1]. - Chituo's MRAM products maintain data integrity for over ten years at 125°C, operate in a temperature range of -40 to +125°C, support over one trillion write cycles, and achieve a yield rate of 95% for large capacity arrays with sub-ppm failure rates [1]. Group 2: Embedded and Standalone MRAM - The embedded eMRAM can replace eFlash in MCU/SoC applications, with industry consensus indicating that 28/22nm will be the last cost-effective nodes for eFlash, while eMRAM can extend to 28nm and beyond [2]. - Chituo's eMRAM combines DRAM-like read/write speeds, non-volatility of flash memory, and SRAM-compatible interface characteristics, making it suitable for high-performance applications in industrial control, automotive electronics, identity authentication, and smart wearables [2]. Group 3: Product Series and Applications - Chituo's standalone MRAM is categorized into multiple series based on capacity, interface, and packaging, and has been adopted by leading users in various industries such as industrial control, power, and metering [5]. - The company is also at the forefront of research on the next generation of MRAM, specifically Spin-Orbit Torque MRAM (SOT-MRAM), and has proposed a groundbreaking device structure suitable for large-scale manufacturing [7]. Group 4: Company Overview - Zhejiang Chituo Technology is the first company in China to achieve mass production of MRAM, with a 12-inch MRAM pilot production line and a comprehensive platform for the research and industrialization of new storage chips [8].