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驰拓科技MRAM将重磅亮相2025深圳国际电子展
半导体行业观察· 2025-08-13 01:38
Core Viewpoint - MRAM technology is emerging as a new generation of storage solutions, with Zhejiang Chituo Technology leading the development and manufacturing of MRAM chips in China, showcasing its latest products at the 2025 Shenzhen International Electronics Exhibition [1][9]. Group 1: MRAM Technology Advantages - MRAM utilizes magnetic materials to represent binary data, offering advantages such as high speed, low power consumption, high endurance, radiation resistance, and reliability [1]. - Chituo's MRAM products maintain data integrity for over ten years at 125°C, operate in a temperature range of -40 to +125°C, support over one trillion write cycles, and achieve a yield rate of 95% for large capacity arrays with sub-ppm failure rates [1]. Group 2: Embedded and Standalone MRAM - The embedded eMRAM can replace eFlash in MCU/SoC applications, with industry consensus indicating that 28/22nm will be the last cost-effective nodes for eFlash, while eMRAM can extend to 28nm and beyond [2]. - Chituo's eMRAM combines DRAM-like read/write speeds, non-volatility of flash memory, and SRAM-compatible interface characteristics, making it suitable for high-performance applications in industrial control, automotive electronics, identity authentication, and smart wearables [2]. Group 3: Product Series and Applications - Chituo's standalone MRAM is categorized into multiple series based on capacity, interface, and packaging, and has been adopted by leading users in various industries such as industrial control, power, and metering [5]. - The company is also at the forefront of research on the next generation of MRAM, specifically Spin-Orbit Torque MRAM (SOT-MRAM), and has proposed a groundbreaking device structure suitable for large-scale manufacturing [7]. Group 4: Company Overview - Zhejiang Chituo Technology is the first company in China to achieve mass production of MRAM, with a 12-inch MRAM pilot production line and a comprehensive platform for the research and industrialization of new storage chips [8].