Core Viewpoint - The research team at the University of Tokyo has confirmed the potential of a new class of magnetic materials, known as "alternating magnetic materials," which can read and write digital information at speeds over 100 times faster than traditional magnetic memory, with the possibility of reducing size to 1/100 of current technologies [1][3]. Group 1: Material Characteristics - The newly discovered "third class of magnetic materials" is made from abundant elements like iron and sulfur, which offers cost advantages and resource availability [1][3]. - This material operates at room temperature and retains information even when the power is turned off, making it suitable for various electronic applications [3][4]. Group 2: Market Potential and Trends - The market for MRAM (Magnetoresistive Random Access Memory) is projected to grow from approximately $2 billion in 2024 to about $22.6 billion by 2029, indicating a significant shift towards energy-efficient magnetic storage solutions [5]. - The new alternating magnetic MRAM is expected to overcome current limitations in capacity and speed, potentially increasing integration density by up to 100 times compared to traditional MRAM [5][6]. Group 3: Applications and Future Development - High-performance memory is crucial for enhancing computing performance, particularly in complex AI calculations and extending battery life in devices like smartphones [6]. - The research team is focused on developing thin films on substrates to facilitate practical applications, with the potential for rapid advancement in production techniques [6].