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第六代高带宽内存(HBM4)
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美股异动 | 存储概念股集体大涨 希捷科技(STX.US)涨逾9%
智通财经网· 2025-11-05 15:05
Core Viewpoint - The U.S. storage sector stocks experienced a significant surge, driven by SK Hynix's successful negotiations with NVIDIA regarding the pricing of the sixth-generation high bandwidth memory (HBM4), which increased by over 50% to approximately $560 per unit [1] Group 1: Stock Performance - Major storage stocks such as Seagate Technology (STX.US) and SanDisk (SNDK.US) rose by over 9%, while Micron Technology (MU.US) increased by nearly 8%, and Western Digital (WDC.US) saw a rise of over 5% [1] Group 2: SK Hynix's Market Position - SK Hynix has strengthened its dominant position in the high-end storage chip market by successfully negotiating a price increase for HBM4, which is expected to lead to a record operating profit of over 70 trillion Korean Won next year [1] Group 3: Pricing Dynamics - Initially, NVIDIA resisted the significant price hike due to potential competition from Samsung and Micron, but ultimately agreed to the price set by SK Hynix at approximately $560 per unit [1] - A SK Hynix executive indicated that advancements in technology and increased input costs justified the substantial price increase for HBM4 [1]
报道:SK海力士与英伟达谈判后宣布HBM4较前代产品提价超50%
Hua Er Jie Jian Wen· 2025-11-05 11:43
SK海力士已证实其作为HBM市场最强厂商的地位——其向全球最大人工智能半导体公司英伟达供应的 第六代高带宽内存(HBM4)价格较前代产品(HBM3E)涨幅超过50%。通过成功完成与英伟达关于明 年HBM4供应的谈判,SK海力士已为创造破纪录的业绩铺平道路。 今年3月,SK海力士率先向英伟达 交付全球首款12层堆叠的HBM4样品。在获得积极评估后,该公司于6月开始初期供货。与此同时,SK 海力士就英伟达计划明年下半年发布的下一代AI芯片"Rubin"所需HBM4展开了价格谈判。(韩国媒体 BusinessKorea) 风险提示及免责条款 市场有风险,投资需谨慎。本文不构成个人投资建议,也未考虑到个别用户特殊的投资目标、财务状况或需要。用户应考虑本文中的任何 意见、观点或结论是否符合其特定状况。据此投资,责任自负。 ...
三星代工发力,HBM4弯道超车海力士?
半导体芯闻· 2025-10-20 10:40
如果您希望可以时常见面,欢迎标星收藏哦~ *免责声明:文章内容系作者个人观点,半导体芯闻转载仅为了传达一种不同的观点,不代表半导体芯闻对该 观点赞同或支持,如果有任何异议,欢迎联系我们。 10万亿,投向半导体 芯片巨头,市值大跌 来源: 内容来自半导体芯闻综合 。 三星电子即将对英伟达的第六代高带宽内存(HBM4)进行最终质量测试之际,负责生产HBM"大 脑"——"逻辑芯片(Logic Die)"的代工(半导体委托生产)事业部也正全力支援。为了与正在大 幅增加HBM4产量的存储事业部保持步调一致,代工事业部正在扩大逻辑芯片晶圆的投入量,并将 良率提升至最大水平,以建立稳定的生产体系。 从HBM4开始,负责HBM大脑功能的逻辑芯片将采用先进制程。HBM4的逻辑芯片安装在由多个 DRAM堆叠而成的HBM底部。逻辑芯片作为控制器部件,连接堆叠的DRAM与在人工智能(AI) 半导体中负责运算的图形处理器(GPU),起到电力供应和数据信号控制的作用,是核心部件。 据业界20日消息,三星电子代工事业部生产的4纳米(nm)工艺逻辑芯片的良率已超过90%。逻辑 芯片良率达到90%意味着通过4纳米工艺生产的10个逻辑芯片中有9 ...