Core Viewpoint - The article highlights the significance of the 2025 Jiufengshan Forum as a premier event in the global compound semiconductor industry, focusing on innovation and technological advancements across various sectors [2][4]. Group 1: Forum Overview - The 2025 Jiufengshan Forum will take place from April 23-25 at the Wuhan Optics Valley Convention and Exhibition Center, featuring keynote speeches and 11 parallel forums covering topics from key materials to AI-enabled EDA toolchains [2][4]. - Over 100 high-quality reports have been confirmed for the forum, with early bird ticket sales ending on March 20 [4]. Group 2: Key Themes of Parallel Forums - The forum will address cutting-edge technologies such as neuromorphic computing, two-dimensional material devices, silicon photonic quantum integration, and wide bandgap semiconductors, focusing on disruptive technologies and industry development directions [5]. - A comprehensive ecosystem will be constructed, covering the entire chain from material preparation to system integration, promoting collaborative innovation within the semiconductor industry [6]. - The integration of heterogeneous technologies will unlock multiplier effects in technological innovation, combining materials, packaging, and circuit design [7]. - The forum will showcase breakthroughs in domestic technologies, including transmission electron microscopes and compound semiconductor equipment, revealing paths to overcome technical barriers [8]. - Insights into emerging demands in sectors like 5G communication, smart driving, and quantum computing will be shared, along with semiconductor technology solutions for scenarios such as electric vehicles and data centers [9]. - The event will gather leading global companies, research institutions, and investment firms to discuss key topics such as third-generation semiconductor capacity layout and testing technology standards [10].

Core Viewpoint - Silicon carbide (SiC) is a compound material composed of carbon and silicon, known for its high hardness and excellent physical and chemical properties, making it a key material for cost reduction and efficiency improvement across various industries [2] Group 1: Characteristics and Advantages of Silicon Carbide - SiC materials possess characteristics such as high pressure resistance, high frequency tolerance, high thermal conductivity, high temperature stability, and high refractive index, which are crucial for transforming the semiconductor industry and supplementing silicon-based technologies [2] - Compared to silicon-based semiconductors, wide bandgap semiconductors represented by SiC and gallium nitride (GaN) exhibit significant performance advantages from material to device level, including high frequency, high efficiency, high power, high pressure resistance, and high temperature tolerance [2] Group 2: Market Potential and Applications - SiC materials have vast market application potential in power semiconductor devices, radio frequency semiconductor devices, and emerging application fields, with significant usage in xEV, photovoltaics, energy storage systems, power grids, rail transportation, communication, AI glasses, smartphones, and semiconductor lasers [3] - The global penetration rate of SiC power semiconductor devices in the overall power semiconductor market increased from 1.1% in 2019 to 5.8% in 2023, with expectations to reach 22.6% by 2030 [4] Group 3: Growth Trends and Projections - From 2019 to 2023, the compound annual growth rate (CAGR) of global revenue from SiC power semiconductor devices in the xEV sector reached 66.7%, with a projected CAGR of 36.1% from 2024 to 2030, indicating continued leadership in market growth [4] - The photovoltaic storage, power grid, and rail transportation sectors also show strong growth momentum, with projected CAGRs of 27.2%, 24.5%, and 25.3% respectively during the forecast period [4]