Core Viewpoint - SK Hynix emphasizes that the commercialization of the next generation of High Bandwidth Memory (HBM) requires technological advancements across various fields, particularly in power efficiency, and closer collaboration with major foundries [1][2]. Group 1: Development Focus - The three main tasks for the development of the next generation HBM are bandwidth, power, and capacity [1]. - Bandwidth is a critical measure of data transfer speed, with the next generation HBM4 expected to double the I/O ports to 2,048 compared to HBM3E [1]. - Customers are demanding even higher bandwidth, with some discussions mentioning up to 4,000 I/O ports, necessitating careful design considerations [1]. Group 2: Power and Capacity Improvements - Power consumption is closely related to logic processes, with HBM now requiring logic chips for controlling the stacked DRAM core chips [1][2]. - The capacity of HBM is directly linked to the number of DRAM stacks, with current commercial HBM supporting up to 12 layers, and future expansions expected to reach 16 to 20 layers [2]. - To achieve more layers within the height limit of 775 micrometers, the spacing between each DRAM must be reduced significantly [2]. Group 3: Technological Challenges - SK Hynix is advancing hybrid bonding technology, which connects DRAMs without using bumps, thereby reducing chip thickness and improving power efficiency [2]. - However, the commercialization of hybrid bonding faces challenges due to high technical difficulty and the need for reliable mass production [2]. - The company identifies cost reduction in manufacturing as a crucial task for the next generation HBM market [2].

Core Viewpoint - Major semiconductor companies like Samsung Electronics and SK Hynix are accelerating facility investments to increase the production capacity of advanced DRAM and NAND, driven by rising demand for these products [1][2]. Group 1: Investment Strategies - Samsung Electronics is transforming and investing in key regions, introducing equipment for DRAM production since Q1 this year, and is constructing a new production line for 10nm-class DRAM in Pyeongtaek [2]. - SK Hynix is focusing on building the M15X facility in Cheongju, which will be responsible for advanced DRAM and HBM, with a total investment of 20 trillion KRW, expected to start operations in Q4 this year [2][3]. - The investment pace for SK Hynix's M15X has accelerated, with infrastructure investments moved up to Q2 early [3]. Group 2: Market Trends - The DRAM market is experiencing a significant turnaround, with general DRAM prices rebounding due to increased demand from PC and smartphone markets, supported by China's subsidy policy [5]. - The average spot price for DDR4 8Gb products rose to $1.762, while DDR5 prices increased from $4.773 to $5.088, reflecting a 6.6% rise [5][6]. - The recovery in the RAM market is occurring earlier than expected, with predictions of a surge in AI PC market size from 43.02 million units last year to 114.22 million units this year, driving further DRAM demand [6]. Group 3: Price Adjustments - NAND price increases are becoming a consensus in the industry, with reports indicating a potential 10% price hike from major manufacturers like Micron and SanDisk [8][9]. - Micron's price increase is attributed to supply tightness caused by a factory outage, while other manufacturers are also expected to follow suit to stabilize supply-demand balance [9][10].