氮化镓

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体积更小功率更大 新材料为机器人产业做“镓”衣
Zheng Quan Shi Bao· 2025-07-11 17:24
Core Insights - The year 2025 is projected to be the milestone for mass production of humanoid robots, with Gallium Nitride (GaN) semiconductors playing a crucial role in bridging the gap between laboratory prototypes and commercial applications [1][2] - GaN semiconductors outperform traditional silicon-based chips in terms of high frequency, energy efficiency, and high voltage tolerance, addressing key challenges in robotic joint drive precision, power density, and heat dissipation [1][2] Group 1: GaN Semiconductor Advantages - GaN chips exhibit significantly lower conduction losses (70% reduction compared to silicon devices) and higher switching speeds, making them ideal for robotic wrist joint drives [2][4] - The introduction of GaN technology allows for smaller device sizes, improved motor power, and enhanced dynamic control for humanoid robots, meeting the increasing market demand for higher load-bearing capabilities [3][4] - GaN's high power density enables robots to achieve practical applications, such as lifting heavy objects, which exceeds the capabilities of silicon chips [3][4] Group 2: Industry Developments and Applications - Major companies like Texas Instruments are focusing on GaN applications in humanoid robots, highlighting its potential for high-precision motor control at elevated PWM frequencies [4] - InnoSilicon has successfully integrated GaN products into various core components of humanoid robots, achieving a 30% power increase and a 5% improvement in conversion efficiency [4][8] - The introduction of GaN technology is expected to significantly reduce the size of power supplies by 30%, optimizing the limited space available in robots [8] Group 3: Market Potential and Future Outlook - The humanoid robot industry is on the brink of explosive growth, with projections indicating that the market could be 100 times larger than that of electric vehicles in the next five years [10][11] - Each humanoid robot may require approximately 300 GaN devices, with the potential for this number to exceed 1000 as performance and power density improve [11] - The market for humanoid robots is anticipated to evolve into a multi-billion dollar industry within five years, with long-term projections suggesting a trillion-dollar market for household smart devices [11]
台积电“退出”,谁来接棒?
3 6 Ke· 2025-07-11 10:42
650V 高压平台:聚焦电源适配器、电机控制器、光伏逆变器等对能效要求苛刻的领域; 近期,全球领先的氮化镓(GaN)功率芯片企业纳微半导体(Navitas Semiconductor)提交的一份合作文件,在全球化合物 半导体行业掀起轩然大波。文件披露,其长期核心合作伙伴 —— 全球晶圆代工巨头台积电(TSMC)计划于 2027 年 7 月 正式终止氮化镓晶圆生产业务。与此同时,纳微半导体宣布与力积电达成合作,共同推进业内领先的 8 英寸硅基氮化镓技 术量产。这一系列动态,预示着全球氮化镓代工格局或将迎来重塑。 01 台积电的氮化镓征程 在氮化镓技术从实验室走向产业化的浪潮中,台积电并非简单的追随者,而是凭借深厚的CMOS 制造经验与前瞻视野,成 为硅基氮化镓(GaN-on-Si)技术路线产业化的关键推动者。 台积电的氮化镓布局可追溯至2011 年。当时,氮化镓功率器件尚处于商业化前夜,台积电基于对未来能源效率升级与高频 通信需求爆发的预判,率先启动技术研发。历经四年攻坚,2015 年成功实现 GaN-on-Si 工艺量产,一举构建起覆盖多电压 等级的完善技术平台: 100V 中压平台:瞄准服务器电源、笔记本供 ...
英伟达,主宰800V时代
半导体芯闻· 2025-07-11 10:29
如果您希望可以时常见面,欢迎标星收藏哦~ 来 源: 内容来自 yolegroup 。 如今,Nvidia,一家甚至不设计或制造功率器件的公司,正在定义未来功率电子器件的特性和功 能。这家 GPU 巨头正在设计下一代 AI 数据中心的动力总成架构。 许多宽带隙 (WBG) 半导体供应商和硅片供应商都在参与其中,愿意投资新技术来满足 Nvidia 的 需求。 英飞凌科技公司系统创新集团负责人 Gerald Deboy将 Nvidia 比作一位大师,指挥"整个世界设计 出一种建设和运营数据中心的新方法"。 Nvidia 邀请的合作伙伴包括英飞凌、MPS、Navitas、罗姆、意法半导体和德州仪器,共同倡导向 800 V 高 压 直 流 (HVDC) 数 据 中 心 电 力 基 础 设 施 过 渡 。 此 外 , 还 有 台 达 、 Flex Power 、 Lead Wealth、光宝科技、Megmee 等电力系统组件供应商,以及伊顿、施耐德电气和 Vertiv 等数据中 心系统建设公司。 Yole Group 电力电子市场和技术分析师 Hassan Cheaito认为,Nvidia 对 AI 数据中心的推动正在 ...
GaN,内卷加剧
半导体芯闻· 2025-07-11 10:29
如果您希望可以时常见面,欢迎标星收藏哦~ 近日,氮化镓(GaN)市场风云再起:台积电正式宣布将在两年内全面退出GaN代工业务; 力积电趁势接下Navitas的订单,填补台积电撤退后的产能缺口;英飞凌则全力推进12英寸 GaN产线进程;瑞萨电子暂停碳化硅(SiC)项目、转而加码GaN;与此同时,ST与英诺赛科 通过战略投资与"锁仓"延长禁售期,进一步深化绑定关系。这一连串动作,正将GaN推向新 一轮的内卷。 GaN凭借更高的开关速度、更低的损耗与更小的尺寸,被视为传统硅器件的"潜在继任者"。在全球 能源转型与高能效驱动的背景下,GaN半导体市场正步入加速成长期。尤其是在亚太、北美、欧洲 等核心市场,相关企业正密集布局,争夺未来制高点。 但在这一轮热度背后,GaN的真正考验正在酝酿——GaN能否从快充、消费电源等边缘应用,迈向 电动汽车主驱系统等高压核心场景? 尽管台积电正在退出GaN代工,但是另一边英飞凌却正在加大投入。据英飞凌新闻稿称,凭借其强 大的IDM模式,英飞凌正在推进其在300毫米晶圆上的可扩展GaN生产,首批客户样品计划于2025 年第四季度发布。 英飞凌已成为首家在其现有量产基础设施内成功开发30 ...
GaN,风云骤变
半导体行业观察· 2025-07-10 01:01
公众号记得加星标⭐️,第一时间看推送不会错过。 近日,氮化镓(GaN)市场风云再起:台积电正式宣布将在两年内全面退出GaN代工业务;力积电趁势接下Navitas 的订单,填补台积电撤退后的产能缺口;英飞凌则全力推进12英寸GaN产线进程;瑞萨电子暂停碳化硅(SiC)项 目、转而加码GaN;与此同时,ST与英诺赛科通过战略投资与"锁仓"延长禁售期,进一步深化绑定关系。这一连串 动作,正将GaN推向新一轮的内卷。 GaN凭借更高的开关速度、更低的损耗与更小的尺寸,被视为传统硅器件的"潜在继任者"。在全球能源转型与高能效驱动 的背景下,GaN半导体市场正步入加速成长期。尤其是在亚太、北美、欧洲等核心市场,相关企业正密集布局,争夺未来 制高点。 但在这一轮热度背后,GaN的真正考验正在酝酿——GaN能否从快充、消费电源等边缘应用,迈向电动汽车主驱系统等高 压核心场景? 台积电抽身,力积电接棒 台积电在7月3日发表声明称,决定在两年内逐步淘汰其GaN半导体代工业务,分析师表示,此举是由于来自中国的竞争侵 蚀了该产品的利润率。由于对GaN低利润前景感到担忧,台积电已决定逐步淘汰其GaN业务,并停止200毫米晶圆生产的 研 ...
英诺赛科称年底将扩产8英寸GaN至2万片/月
Di Yi Cai Jing· 2025-07-08 13:19
英诺赛科将提升8英寸氮化镓产能,预计年底从1.3万片/月扩至2万片/月。 8日,第一财经从国内氮化镓(GaN)龙头企业英诺赛科(02577.HK)处确认,公司将进一步提升8英 寸(200nm)产能,预计年底将从1.3万片/月扩产至2万片/月。此前公司表示,要在未来五年内提升到7 万片/月。 英诺赛科是实现大规模量产8英寸晶圆的氮化镓集成器件制造商(IDM),产品覆盖晶圆制造、分立器 件、智能氮化镓IC、驱动控制芯片和氮化镓功率模块。目前氮化镓(GaN)在充电器或者其他消费电子 产品里的占比越来越高。凭借高效能和小体积,也在电池的双向电能转换、光伏的光储互补、数据中心 功率密度提升领域发挥重要作用,有望成为替代硅的重要材料。 英诺赛科透露扩产的时间点恰逢台积电退出氮化镓代工业务,英飞凌不久前也刚高调宣布在300mm晶 圆上的可扩展GaN生产已步入正轨,首批样品将于2025年第四季度向客户提供。现有的知名功率半导体 企业不愿错过这样快速增长的市场是对氮化镓未来发展的认可,但在工程可实现方面,显然存在分歧。 根据Yole Group的预测,到2030年,GaN在功率应用领域的收入将以每年36%的速度增长,达到约25 ...
罗马仕溃败、安克失血,极致内卷后避不开的苦果|焦点分析
36氪· 2025-07-07 14:03
以下文章来源于硬氪 ,作者张子怡 硬氪 . 专注全球化、硬科技报道。36kr旗下官方账号。 充电宝行业经历十多年发展,早已成为一个极其红海的市场。廉价的材料、极限的性能和轻巧的外观其实是"不可能三角",但因为充电宝不是什么高技术 附加值的产品,链条上的人都只能无穷逼近材料的极限,在外观、充电效率上挤出些差异化。 在这场风暴中,责任无法单独归咎于任意一方,这其实是一个极度内卷行业必然会发生的劫难。 充电宝的问题不止在电芯。 文 | 张子怡 编辑 | 袁斯来 来源| 硬 氪 (ID: south_36kr ) 封面来源 | 企业官方 从爆炸到召回,半个月时间内,移动电源行业经历巨震,几乎波及所有大厂。 作为事件导火索,曾被誉为"国民充电宝"的罗马仕已濒临绝境。 7月6日凌晨1点左右,罗马仕正式发布停工停产放假通知。通知称,随着市场环境的不断变化和公司业务的发展需要,经公司股东会研究决定,近段时间 公司停工停产。停工时间为自2025年7月7日起持续6个月。 此前,已有多为消费者在在社交平台上反映,罗马仕淘宝官方旗舰店在处理充电宝召回退款时出现异常,部分退款申请已被卡顿超过数十天,且迟迟未能 到账。原因系为罗马仕店铺 ...
横琴五年产业发展蓝图出炉;无人配送车落地横琴丨横琴财报③
2 1 Shi Ji Jing Ji Bao Dao· 2025-07-07 12:43
镓未来携手联想打造拯救者245W氮化镓充电器 近期联想旗下LEGION拯救者品牌推出了一款245W氮化镓电源适配器,相比传统游戏本同功率电源,这款的机身显著缩小,重 量大幅减轻,同时还支持245W输出,能够让拯救者的游戏本性能得到充分发挥。 近日,珠海顺丰速运有限公司、京东物流的智能网联功能型无人驾驶车辆正式落地横琴,这是继Robobus、Robotaxi以及自动驾 驶环卫车之后,横琴在智能网联自动驾驶领域的又一创新应用载体,标志着横琴粤澳深度合作区进入无人配送新赛道。 横琴首批9台无人配送车目前已上路测试,顺丰速运无人配送车已于7月1日正式投入运营,京东物流无人配送车将于7月中旬在 横琴运营,运营路线覆盖澳门青年创意谷、创新方、澳门新街坊、横琴总部大厦、励骏庞都、颂琴、长隆等热门景区、住宅、 商圈及办公园区。 这款明星产品之所以能同时实现"小身材、高性能、大能量"的三重突破,其核心模块正是由镓未来(GaNext)集成式Cascode氮 化镓功率器件强力驱动!其中PFC开关管和LLC开关管均来自于镓未来,分别采用一颗G2N70R150PD-H功率器件和两颗 G2N70R240PB-H功率器件。 镓未来是行业领 ...
1200亿灰飞烟灭,半导体鼻祖破产
商业洞察· 2025-07-07 09:21
Core Viewpoint - Wolfspeed, a pioneer in the semiconductor industry, has filed for bankruptcy due to overwhelming debt and inability to adapt to market changes, particularly the rise of Chinese competitors [3][22]. Group 1: Company Background - Wolfspeed was once the largest manufacturer of silicon carbide (SiC) substrates, with a peak market value of $16.5 billion (approximately 120 billion RMB) [3]. - The company originated from Cree Research, founded in 1987, and became a leader in the LED market before transitioning to SiC technology [8][12]. - Wolfspeed's market share in SiC substrates was as high as 80% in the past, but it has significantly declined to 33.7% by 2024 due to increased competition from Chinese firms [16]. Group 2: Financial Struggles - As of March, Wolfspeed had approximately $1.33 billion in cash reserves but faced $6.5 billion in debt, leading to severe liquidity issues [20]. - The company has reported net losses for ten consecutive years, with losses escalating from $280 million in FY 2018 to $864 million in FY 2024 [21]. - In May 2025, Wolfspeed's stock plummeted by 57%, resulting in a market value loss exceeding $1 billion [21]. Group 3: Market Dynamics - The demand for SiC semiconductors surged in sectors like electric vehicles and renewable energy, with over 60% of the demand coming from the EV market [20]. - Despite the high demand, Wolfspeed's expansion efforts did not yield the expected orders, particularly as the EV market faced a slowdown [20]. - The company's strategy of aggressive capacity expansion did not align with market realities, leading to underutilization of its new facilities [22][23]. Group 4: Competitive Landscape - Chinese competitors have leveraged their mature manufacturing capabilities to challenge Wolfspeed, which failed to adequately address the Chinese market's dynamics [3][24]. - Other global players, such as STMicroelectronics and Infineon, have pursued vertical integration and partnerships with Chinese firms, further intensifying competition [17].
传台积电或将停产GaN;深圳新设50亿元半导体产业投资基金;16Gb DDR4持续上涨…一周芯闻汇总(6.30-7.6)
芯世相· 2025-07-07 04:04
Core Insights - The article discusses significant developments in the semiconductor industry, highlighting investments, policy changes, and market trends that could impact future growth and competition in the sector. Group 1: Investment and Policy Initiatives - Shenzhen has established a semiconductor and integrated circuit investment fund with a total scale of 5 billion yuan to support the optimization and quality improvement of the industry chain [5] - Shanghai has implemented joint support policies for key industrial chains, including integrated circuits and aerospace, to accelerate the cultivation of these sectors [5] - Hong Kong has approved the construction of its first 8-inch silicon carbide wafer factory, marking a significant step in semiconductor manufacturing [5] Group 2: Market Trends and Projections - South Korea's semiconductor exports increased by 11.6% year-on-year in June, reaching a record high of $14.97 billion [7] - The U.S. Senate has passed a tax bill that could increase tax credits for semiconductor companies building new factories from 25% to 35% [8] - By 2030, mainland China is projected to surpass Taiwan and become the largest semiconductor wafer foundry center globally, capturing 30% of the total installed capacity [8] Group 3: Company Developments - TSMC is reportedly planning to cease production on its GaN production line to focus on advanced packaging [6] - Samsung's semiconductor division is expected to report a 39% drop in operating profit for Q2 due to delays in supplying advanced memory chips to Nvidia [11] - The bankruptcy review application for the advanced packaging equipment company, Paixin Semiconductor, has been filed, indicating financial distress [9][10] Group 4: Technology and Innovation - Tokyo University has developed a new gallium-doped indium oxide crystal material that could replace silicon, enhancing performance in AI and big data applications [19] - The upcoming LPDDR6 memory is set to be mass-produced by Samsung in late 2025, with Qualcomm as the first adopter [19] Group 5: Market Analysis - TrendForce reports that the price of 16Gb DDR4 DRAM chips continues to rise, while PC-grade DRAM prices are losing momentum [16] - CFM forecasts that LPDDR4X prices will increase by over 20% in Q3 2025, while LPDDR5X prices will see slight increases [17]