Investment Rating - The report maintains a "Buy" rating for several companies including NAURA, SICC, SUMCO, Shin-Etsu Chemical, Mitsubishi Electric, and Infineon [2]. Core Insights - The report highlights significant growth in local production and demand for silicon wafers and SiC substrates in China, with local coverage expected to increase from 41% to 54% for 12-inch silicon wafers and from 80% to 87% for 6-inch SiC substrates by 2027E [1][6]. - Pricing trends indicate a decline in average selling prices (ASP) for 8-inch silicon wafers at a CAGR of -10% from 2024 to 2026E, while 12-inch wafers are expected to decline at -6% CAGR during the same period. SiC substrate ASP is projected to decrease from US$443 in 2024 to US$384 in 2026E [1][6]. - Capacity expansion is notable, with 12-inch silicon wafer capacity expected to grow at a CAGR of 21% from 2024 to 2027E, significantly outpacing the 3% CAGR for 8-inch silicon wafers. SiC substrate capacity is also set to expand at 26% and 96% CAGR for 6-inch and 8-inch substrates, respectively [1][6]. - The report anticipates a consolidation in the industry, with the top three Chinese silicon wafer suppliers projected to cover 36% of domestic demand by 2027E, up from 26% in 2024 [1]. Summary by Sections China TAM - The total addressable market (TAM) for silicon wafers in China is projected to grow from US$1.999 billion in 2021 to US$4.511 billion by 2030E, with a notable increase in shipments from 36,962k units in 2021 to 103,570k units by 2030E [37]. - The SiC substrate market is expected to grow from US$197 million in 2021 to US$2.770 billion by 2030E, driven by rising EV penetration and SiC adoption rates [39]. - The GaN devices market is projected to expand from US$66 million in 2021 to US$1.611 billion by 2030E, supported by applications in EVs, data centers, and consumer electronics [42]. Supply and Demand Dynamics - Local suppliers' capacity expansion in silicon wafers is primarily driven by logic and memory clients, while SiC substrate capacity is expanding due to increased adoption in EVs and fast charging technologies [43]. - The report notes that local suppliers are expected to cover 75% of SiC substrate demand in China by 2025E, increasing to 84% by 2027E [6][39]. - The demand for SiC and GaN is anticipated to replace IGBT in high power and high frequency applications, with SiC penetration rates projected to reach 75% in EVs by 2030E [52]. Pricing Trends - The ASP for silicon wafers is expected to decline, with 8-inch wafers decreasing at a CAGR of -10% and 12-inch wafers at -6% from 2024 to 2026E [1][6]. - SiC substrate pricing is also expected to narrow, making SiC MOSFETs more competitive against silicon IGBTs [1]. Industry Consolidation - The report indicates a trend towards consolidation in the silicon wafer industry, with the top three suppliers expected to significantly increase their market share in China by 2027E [1].

Investment Rating - The investment rating for CR Micro (688396.SS) has been upgraded from Underweight to Equal-weight with a target price increase from Rmb28.10 to Rmb40.00 [3][5]. Core Insights - The report identifies three key investment themes in the Chinese automotive semiconductor sector: Power Discrete Devices, Advanced Driver Assistance Systems (ADAS), and Microcontrollers (MCU) [4][23]. - China's electric vehicle (EV) market is projected to grow significantly, with EV penetration expected to rise from 28% in 2024 to 42% by 2030, indicating a strong demand for automotive semiconductors [3][27]. - The report emphasizes the importance of localization in the semiconductor supply chain, noting that most global automotive chip companies are still in the early stages of implementing localization strategies in China [4][28]. Summary by Sections Investment Themes - The three key investment areas are: 1. **Power Discrete Devices**: Chinese companies have made solid progress in IGBT and SiC substrates, with opportunities in MOSFET and SiC devices [4][40]. 2. **ADAS**: The ADAS SoC market is expected to have the highest compound annual growth rate (CAGR), benefiting various suppliers including SoC vendors and peripheral chip manufacturers [4][24]. 3. **MCU**: The self-sufficiency rate for automotive MCUs is very low, at less than 5% in 2024, indicating significant growth potential for leading local companies [4][41]. Market Dynamics - China consumed 56% of the global electric vehicle production, and the report forecasts that the domestic automotive semiconductor market will continue to grow faster than global peers due to the increasing demand for EVs and government support for supply chain localization [3][27]. - The report highlights that the automotive semiconductor supply chain in Greater China currently accounts for less than 5% of the global supply, with a self-sufficiency rate of only 15% [37][38]. Company Ratings and Strategies - The report recommends specific companies for investment based on their positions in the identified themes: - **Power Semi**: Companies like Starpower (603290.SS), Yangjie Technology (300373.SZ), and SICC (688234.SS) are highlighted for their growth potential [5][23]. - **ADAS**: Companies such as Horizon Robotics (9660.HK) and Will Semiconductor (603501.SS) are noted for their strong positions in the ADAS market [5][23]. - **MCU**: GigaDevice (603986.SS) is recognized for its potential to benefit from localization trends [5][23]. Future Projections - The report anticipates that by 2027, the self-sufficiency rate for automotive chips in China will reach 28%, reflecting the ongoing efforts to enhance local production capabilities [16][53]. - The expected growth in the electric vehicle market is projected to triple by 2030, with significant implications for the semiconductor industry [33][34].

山东天岳先进科技股份有限公司 （山东省济南市槐荫区天岳南路 99 号） （证券代码：688234 证券简称：天岳先进） 2025 年第二次临时股东大会 会议资料 二〇二五年七月 | | | 2025 年第二次临时股东大会会议须知 益的提问，主持人或其指定有关人员有权拒绝回答。 2、出席会议的股东及股东代理人须在会议召开前 20 分钟到会议现场办理签 到手续，并请按规定出示证券账户卡、身份证明文件或法人单位证明、授权委托 书等，经验证后领取会议资料，方可出席会议。 会议开始后，由会议主持人宣布现场出席会议的股东人数及其所持有表决权 的股份总数，在此之后进场的股东无权参与现场投票表决。 3、会议按照会议通知上所列顺序审议、表决议案。 4、股东及股东代理人参加股东大会依法享有发言权、质询权、表决权等权 利。股东及股东代理人参加股东大会应认真履行其法定义务，不得侵犯公司和其 他股东及股东代理人的合法权益，不得扰乱股东大会的正常秩序。 5、要求发言的股东及股东代理人，应提前在股东大会签到处进行登记，会 议进行中只接受股东及股东代理人发言或提问，股东现场提问请举手示意，经会 议主持人许可方可发言。有多名股东及股东代理人同 ...

山东天岳先进科技股份有限公司 关于香港联交所审议公司发行 境外上市外资股（H 股）的公告 本公司董事会及全体董事保证本公告内容不存在任何虚假记载、误导性陈述 或者重大遗漏，并对其内容的真实性、准确性和完整性依法承担法律责任。 山东天岳先进科技股份有限公司（以下简称"公司"）正在进行申请发行境 外上市外资股（H 股）股票并在香港联合交易所有限公司（以下简称"香港联交 所"）主板挂牌上市（以下简称"本次发行上市"）的相关工作。香港联交所上市 委员会于 2025 年 6 月 19 日举行上市聆讯，审议公司本次发行上市的申请。 公司本次发行上市的联席保荐人已于 2025 年 6 月 20 日收到香港联交所向其 发出的信函，其中指出香港联交所上市委员会已审阅公司的上市申请，但该信函 不构成正式的上市批准，香港联交所仍有对公司的上市申请提出进一步意见的权 力。 证券代码：688234 证券简称：天岳先进 公告编号：2025-046 山东天岳先进科技股份有限公司 董 事 会 2025 年 6 月 21 日 公司本次发行上市尚需取得香港证券及期货事务监察委员会和香港联交所 等相关监管机构、证券交易所的核准和/或批准，该事项仍 ...

Core Viewpoint - Tianyue Advanced, known as the "first stock of silicon carbide substrates," is planning to issue up to 87.21 million H-shares to accelerate international expansion and enhance its capital strength and competitive advantage [1][2]. Group 1: Company Overview - Tianyue Advanced was established in November 2010 and focuses on the research, production, and sales of silicon carbide substrates, which are widely used in microwave electronics and power electronics [2]. - The company ranked third globally in the semi-insulating silicon carbide substrate market by sales from 2019 to 2020, according to Yole report [2]. Group 2: Financial Performance - The actual issuance price of Tianyue Advanced's shares was 82.79 CNY per share, nearly double the previously expected price of 46.54 CNY, resulting in a total fundraising of 3.203 billion CNY, exceeding the target by 1.203 billion CNY [3]. - Despite increased production capacity, Tianyue Advanced reported a total net loss of 221 million CNY from 2022 to 2023, with a significant drop in gross margin from 25%-35% to -5.75% in 2022 [4][5]. - In the first quarter of 2025, the company recorded a net profit of 8.52 million CNY, a year-on-year decrease of 81.52%, with a net margin of 2.09% [5]. Group 3: Stock Performance - Tianyue Advanced's stock has been underperforming, with approximately 70% of the time trading below its initial public offering price, and as of June 20, 2025, the stock price was 57.38 CNY, down 30.69% from the IPO price [6][7]. - The stock price fell to a low of 41.00 CNY within four months of listing, indicating a significant decline from the initial offering price [6]. Group 4: Shareholder Activity - Major shareholders, including those associated with Haitong Securities, have reduced their holdings twice, cashing out approximately 760 million CNY, raising concerns about the company's future prospects [8].

证券代码：688234 证券简称：天岳先进 公告编号：2025-045 山东天岳先进科技股份有限公司 本公司董事会及全体董事保证公告内容不存在任何虚假记载、误导性陈述或 者重大遗漏，并对其内容的真实性、准确性和完整性依法承担法律责任。 重要内容提示： ? 股东大会召开日期：2025年7月2日 ? 本次股东大会采用的网络投票系统：上海证券交易所股东大会网络投票 系统 一、 召开会议的基本情况 （一） 股东大会类型和届次 （二） 股东大会召集人：董事会 （三） 投票方式：本次股东大会所采用的表决方式是现场投票和网络投票相结 合的方式 （四） 现场会议召开的日期、时间和地点 召开日期时间：2025 年 7 月 2 日 14 点 30 分 召开地点：山东省济南市槐荫区天岳南路 99 号天岳先进公司会议室 （五） 网络投票的系统、起止日期和投票时间。 二、 会议审议事项 本次股东大会审议议案及投票股东类型 序号 议案名称 网络投票系统：上海证券交易所股东大会网络投票系统 网络投票起止时间：自2025 年 7 月 2 日 至2025 年 7 月 2 日 采用上海证券交易所网络投票系统，通过交易系统投票平台的投票时间为股 ...

Core Points - Shandong Tianyue Advanced Technology Co., Ltd. won the "Gold Award" in the "Semiconductor Electronic Materials" category at the 31st Semiconductor of the Year Awards in Tokyo, marking the first time a Chinese company has received this award [1][3] - The company outperformed leading competitors such as Mitsui Chemicals and Mitsubishi Materials, indicating its successful entry into the global semiconductor industry elite [3] Company Achievements - Tianyue Advanced has received a total of 194 invention patents and 308 utility model patents, with 14 of these being granted overseas as of December 31, 2024 [3] - The company reported a revenue of 1.768 billion yuan in 2024, representing a year-on-year growth of 41.37% [3] - Net profit attributable to the parent company reached 180.464 million yuan, an increase of 226.1845 million yuan, marking a turnaround from losses [3] - The company specializes in the production of third-generation wide bandgap semiconductor substrate materials, including semi-insulating and conductive SiC substrates, and is one of the few companies capable of mass production of 8-inch SiC substrates [3]

证券代码：688234 证券简称：天岳先进 公告编号：2025-044 特此公告。 山东天岳先进科技股份有限公司 董 事 会 山东天岳先进科技股份有限公司 关于补选第二届董事会非独立董事的公告 本公司董事会及全体董事保证本公告内容不存在任何虚假记载、误导性陈述 或者重大遗漏，并对其内容的真实性、准确性和完整性依法承担法律责任。 山东天岳先进科技股份有限公司（以下简称"公司"）于 2025 年 6 月 16 日 召开第二届董事会第十三次会议，审议通过了《关于补选第二届董事会非独立董 事的议案》，现将相关情况公告如下： 一、补选第二届董事会非独立董事情况 鉴于公司原董事王欢先生已辞去公司第二届董事会董事职务，为保障公司董 事会工作的正常运行，公司开展了董事补选工作。经董事会提名，并经公司提名 委员会审核同意，公司董事会同意提名王俊国先生（简历见附件）为第二届董事 会非独立董事候选人，任期自公司股东大会审议通过之日起至第二届董事会届满 之日止。 同时为符合《香港联合交易所有限公司证券上市规则》等境内外监管法规的 要求，公司确认王俊国先生董事角色为执行董事，自公司股东大会审议通过并自 公司发行的 H 股股票在香港联合 ...

证券代码：688234 证券简称：天岳先进 公告编号：2025-045 一、 召开会议的基本情况 （一） 股东大会类型和届次 2025年第二次临时股东大会 （四） 现场会议召开的日期、时间和地点 召开日期时间：2025 年 7 月 2 日 14 点 30 分 召开地点：山东省济南市槐荫区天岳南路 99 号天岳先进公司会议室 （五） 网络投票的系统、起止日期和投票时间。 网络投票系统：上海证券交易所股东大会网络投票系统 山东天岳先进科技股份有限公司 关于召开2025年第二次临时股东大会的通知 本公司董事会及全体董事保证公告内容不存在任何虚假记载、误导性陈述或 者重大遗漏，并对其内容的真实性、准确性和完整性依法承担法律责任。 重要内容提示： 网络投票起止时间：自2025 年 7 月 2 日 至2025 年 7 月 2 日 采用上海证券交易所网络投票系统，通过交易系统投票平台的投票时间为股 东大会召开当日的交易时间段，即 9:15-9:25,9:30-11:30，13:00-15:00；通过互联 网投票平台的投票时间为股东大会召开当日的 9:15-15:00。 （六） 融资融券、转融通、约定购回业务账户和沪股通投资 ...

Core Viewpoint - Tianyue Advanced has received approval from the China Securities Regulatory Commission for its plan to issue up to 87,206,050 overseas listed shares and list on the Hong Kong Stock Exchange, pending further regulatory approvals [1][3]. Group 1: Company Overview - Tianyue Advanced specializes in the research, production, and sales of silicon carbide semiconductor materials [3]. - The company is one of the few globally capable of mass-producing 8-inch silicon carbide substrates and has pioneered the commercialization of silicon carbide substrates from 2 inches to 8 inches, as well as being among the first to produce 12-inch silicon carbide substrates [3]. Group 2: Recent Achievements - Tianyue Advanced won the "Gold Award" in the semiconductor electronic materials category at the 31st Semiconductor of the Year 2025 awards, marking a historic breakthrough for Chinese companies in the critical foundational materials sector of semiconductors [4].