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天岳先进涨超7% 碳化硅应用前景广阔 需求端爆发或推动行业规模快速扩张
Zhi Tong Cai Jing· 2025-12-12 07:32
公开资料显示,作为碳化硅半导体材料行业领军企业,天岳先进目前已实现全系列12英寸碳化硅衬底的 技术攻关,把碳化硅衬底行业带入12英寸时代。据五矿证券研报,碳化硅(SiC)作为第三代宽禁带半导 体,凭借其在击穿电场、禁带宽度、热导率、电子饱和漂移速度和折射率等方面的突出优势,正全面渗 透新能源、AI、通信、AR四大产业,成为推动技术升级与效率革命的关键支撑。 五矿证券认为,需求端的全面爆发推动行业规模快速扩张,预计2027年碳化硅衬底供需紧平衡,甚至存 在出现产能供应紧张的可能性;2030年,全球1676万片的衬底需求量,较2025年的供给,存在约1200万 片的产能缺口。其中,AI中介层、新能源汽车、AR眼镜是三大核心增长点,该行预计到2030年需求占 比分别为37%、26%、23%;其中SiC在AI芯片先进封装散热材料的运用上,若能实现在"基板层"、"中 介层"和"热沉"三个环节的产业化,2030E,全球碳化硅衬底需求量有望达到约3000万片。 天岳先进(02631)涨超7%,截至发稿,涨7.01%,报59.55港元,成交额1.88亿港元。 ...
港股异动 | 天岳先进(02631)涨超7% 碳化硅应用前景广阔 需求端爆发或推动行业规模快速扩张
智通财经网· 2025-12-12 07:29
智通财经APP获悉,天岳先进(02631)涨超7%,截至发稿,涨7.01%,报59.55港元,成交额1.88亿港元。 五矿证券认为,需求端的全面爆发推动行业规模快速扩张,预计2027年碳化硅衬底供需紧平衡,甚至存 在出现产能供应紧张的可能性;2030年,全球1676万片的衬底需求量,较2025年的供给,存在约1200万 片的产能缺口。其中,AI中介层、新能源汽车、AR眼镜是三大核心增长点,该行预计到2030年需求占 比分别为37%、26%、23%;其中SiC在AI芯片先进封装散热材料的运用上,若能实现在"基板层"、"中 介层"和"热沉"三个环节的产业化,2030E,全球碳化硅衬底需求量有望达到约3000万片。 公开资料显示,作为碳化硅半导体材料行业领军企业,天岳先进目前已实现全系列12英寸碳化硅衬底的 技术攻关,把碳化硅衬底行业带入12英寸时代。据五矿证券研报,碳化硅(SiC)作为第三代宽禁带半 导体,凭借其在击穿电场、禁带宽度、热导率、电子饱和漂移速度和折射率等方面的突出优势,正全面 渗透新能源、AI、通信、AR四大产业,成为推动技术升级与效率革命的关键支撑。 ...
半导体板块上扬,晶丰明源20%涨停,燕东微等大涨
Zheng Quan Shi Bao Wang· 2025-12-12 07:16
半导体板块12日盘中强势上扬,截至发稿,晶丰明源20%涨停,燕东微涨近17%,华海诚科、天岳先 进、中科飞测等涨超10%, 行业方面,根据WSTS 2025年秋季发布的最新预测,2025年全球半导体市场规模预计同比增长22.5%, 其中受大型IT企业数据中心投资加速驱动,存储器和逻辑芯片增长尤为强劲。WSTS预计2026年全球半 导体市场规模同比增速或将达到26.3%,数据中心投资有望继续成为市场增长的主要推动力。 华泰证券指出,2025年三季度中国及海外半导体设备企业中国区收入合计145亿美元,同比增长8%;国 产化率22%,同比增长6个百分点。展望2026年,预计中国市场规模同比或将增长2%达到510亿美元; 随着长鑫科技等企业推进上市辅导进程、中芯国际和华虹公司完成收并购动作,预计2026年中国市场先 进工艺逻辑和存储相关投资有望提速。此外,除本土企业有望实现份额提升以外,部分非美企业中国区 市占率或将保持稳定。 ...
半导体设备ETF(561980)午后涨超3%,Omdia:2025年全球半导体营收将站上8000亿美元
Jin Rong Jie· 2025-12-12 06:43
Group 1 - The semiconductor industry is projected to achieve a significant milestone, with global semiconductor revenue expected to reach $216.3 billion in Q3 2025, marking the first time quarterly revenue surpasses $200 billion, and an annual revenue forecast of $800 billion [1] - The strong growth in the semiconductor industry is attributed to the expansion of AI advanced processes and a super cycle in storage, with logic chip revenue expected to grow by 37.1% in 2025 and global storage market growth projected at 39.4% in 2026, surpassing the 27.8% growth expected in 2025 [2] - The semiconductor equipment sector is positioned as a critical upstream component of the industry, with expectations for a significant increase in domestic semiconductor equipment orders and performance in 2025, driven by advancements in AI and the expansion projects of major domestic storage manufacturers [2] Group 2 - The semiconductor equipment ETF (561980) tracks the CSI Semiconductor Industry Index, with over 50% equipment content, and has seen a year-to-date increase of over 55%, outperforming similar indices in the semiconductor sector [2] - The semiconductor equipment segment is recognized as a foundational element of the industry, with a clear long-term growth logic supported by structural strong dynamics [2]
天岳先进:半绝缘碳化硅衬底是GaN-on-SiC技术路线核心基础材料
Ju Chao Zi Xun· 2025-12-11 11:54
针对投资者提及友商在特定领域(如人形机器人伺服电机)的具体产品技术路线,公司表示,宏微科技、英诺赛科等企业是否采用GaN-on-Si 还是GaN-on-SiC属于各自经营细节,建议以相关公司官方披露为准。天岳先进从行业技术逻辑角度进一步说明,GaN-on-Si目前多用于消费电 子及中低压功率器件领域,具有成本优势;而GaN-on-SiC则结合了氮化镓的高频性能和碳化硅的高导热性能,通常应用于对散热和稳定性要 求更高的射频或高端功率领域。 (文/罗叶馨梅)12月11日,天岳先进(688234.SH)在互动平台回复投资者提问时表示,从SiC技术路线本身来看,SiC导电型器件在频率和散 热性能方面具有优势,公司正积极推进相关机器人领域的产业化合作。公司重申,其在碳化硅材料及相关应用方向上将持续深化布局。 从公司披露的整体表述来看,未来其将在既有5G通信、雷达等射频应用基础上,继续结合人形机器人、低空经济等新兴场景推动半绝缘碳化 硅衬底的产业化落地。公司也在围绕相关高端功率及射频器件客户,探索更多合作机会,以把握新一轮技术升级和应用拓展带来的市场机 会。 (校对/秋贤) 公司介绍,天岳先进是全球领先的半绝缘碳化硅衬底 ...
天岳先进(688234.SH):半绝缘碳化硅衬底正是GaN-on-SiC技术路线的核心基础材料
Ge Long Hui· 2025-12-11 08:50
格隆汇12月11日丨天岳先进(688234.SH)在互动平台表示,从SiC技术路线本身来看,SiC导电型器件的 频率和散热性能均非常优秀,SiC导电型器件也有在相关机器人领域方向进行应用拓展,公司目前也正 在积极推进相关产业化合作。 关于您提及的具体问题: 1.关于具体产品的技术路线 对于宏微科技、英 诺赛科等友商在特定领域(如人形机器人伺服电机)的具体产品技术路线(是采用GaN-on-Si还是GaN- on-SiC),属于相关公司的具体经营细节,建议您以相关公司官方披露的信息为准。 2.从行业技术逻辑 来看: GaN-on-Si(硅基氮化镓): 目前在消费电子、中低压功率器件领域应用较多,具有成本优势。 GaN-on-SiC(碳化硅基氮化镓): 结合了氮化镓的高频性能和碳化硅的高导热性能,通常用于对散热 要求极高、稳定性要求严苛的射频(RF)领域或高端功率领域。 天岳先进是全球领先的半绝缘碳化硅 衬底供应商。首先,传统意义上来看,半绝缘碳化硅衬底主要应用于5G通信、雷达等射频领域,随着 人形机器人、低空经济等新兴产业对高性能功率器件需求的提升,确实有助于拓宽公司半绝缘产品的下 游应用场景,为公司带来新的增长 ...
触底中的碳化硅,搭上AI顺风车
2 1 Shi Ji Jing Ji Bao Dao· 2025-12-09 13:15
业内人士对21世纪经济报道记者分析,虽然今年碳化硅衬底价格依然在下滑,但态势已经与2024年有所不同。而在应用层面, 除了新能源汽车依然是碳化硅当前最大应用市场之外,AI数据中心和AR眼镜等新场景也在静待爆发,有望打开行业新的成长曲 线。逐渐筑底 从宏观来看,碳化硅衬底领域公司依然面临价格竞争带来的阶段性压力,但相比前一年似乎已经有所改善。 国内碳化硅衬底头部企业天岳先进此前发布的三季度财报显示,期内公司实现营业收入3.18亿元,同比下降13.76%,前三个季 度营收合计下降13.21%;三季度公司实现归母净利润为亏损976万元,同比下滑123.72%,前三个季度合计下滑99.22%。 公告指出,营收下降的原因在于,为应对激烈的市场竞争,扩大碳化硅产品的市场应用,争取更高市场份额,公司战略性调降 了产品销售价格。 净利润下行,则是主要受到产品销售价格下降影响,营业收入及毛利减少;同时新产品客户测试送样使销售费用增加,大尺 寸、新应用产品研发投入使研发费用增加,外汇汇率变动产生汇兑损益使财务费用同比增长。 天岳先进的表现也是当前碳化硅衬底行业普遍面临的竞争情况缩影。 21世纪经济报道记者骆轶琪 经历2024年产 ...
半导体板块12月8日涨2.82%,赛微微电领涨,主力资金净流入44.29亿元
Zheng Xing Xing Ye Ri Bao· 2025-12-08 09:04
| 代码 | 名称 | 收盘价 | 涨跌幅 | 成交量(手) | 成交额(元) | | --- | --- | --- | --- | --- | --- | | 688325 | 赛微微电 | 101.20 | 18.82% | 4.75万 | 4.60亿 | | 688048 | 长光华芯 | 148.48 | 15.26% | 24.68万 | 34.62亿 | | 301308 | 江波龙 | 273.00 | 14.64% | 25.21万 | 65.41亿 | | 688498 | 源杰科技 | 668.00 | 11.54% | 5.02万 | 33.06亿 | | 300456 | 赛微电子 | 53.65 | 11.35% | 129.50万 | 67.69亿 | | 001309 | 德明利 | 222.42 | 10.00% | 17.14万 | 37.15亿 | | 688110 | 东芯股份 | 124.19 | 9.70% | 30.44万 | 36.64亿 | | 688525 | 佰维存储 | 117.57 | 8.85% | 32.82万 | 37.87亿 | | 68823 ...
中国功率半导体,逆袭
3 6 Ke· 2025-12-08 00:07
近日,全球半导体巨头安森美(onsemi)宣布与英诺赛科达成深度合作,双方将依托英诺赛科领先的8 英寸硅基GaN工艺平台,联合开发下一代高效功率器件;而早在今年8月,英诺赛科已作为唯一中国芯 片企业,跻身英伟达800V直流电源架构合作伙伴名录,为其AI数据中心提供全链路氮化镓解决方案, 助力单机柜功率密度突破300kW。 国际巨头争相与中国技术领军者牵手,预示着一场深刻的产业变局正在上演。 从被动跟随到被主动选择,从技术依赖到反向赋能,近年来发生的行业热点与产业动态,共同指向了一 个无可争议的趋势:在支撑新能源汽车、光伏储能、AI数据中心等未来产业的核心硬件——功率半导 体赛道上,中国企业正以前所未有的速度和力度完成"逆袭",从全球产业的边缘走向舞台中央。 回顾过往,过去几十年来,中国半导体产业长期深陷高端依赖进口、核心技术缺失的困境,功率半导体 领域尤为突出,关键器件的供应长期被国际巨头把持,产业发展受制于人。 然而,近年来,随着全球贸易格局演变,叠加国内自主可控战略与国产替代浪潮的深入推进,中国半导 体行业迎来加速突破的关键期,在多个细分赛道实现突破。其中,功率半导体作为支撑众多战略性新兴 产业的核心器件 ...
中国功率半导体,逆袭!
半导体行业观察· 2025-12-07 02:33
Core Viewpoint - The article highlights the significant transformation in the global semiconductor industry, particularly in the power semiconductor sector, where Chinese companies are rapidly advancing from a position of dependency to becoming key players in the global market [1][2][3]. Group 1: Industry Dynamics - Onsemi and Innoscience have formed a deep collaboration to develop next-generation efficient power devices based on Innoscience's 8-inch silicon-based GaN technology, indicating a shift in global partnerships towards Chinese technology leaders [1][3]. - The global power semiconductor giants are increasingly engaging in comprehensive collaborations with Chinese firms, including joint R&D and supply chain integration, reflecting a recognition of China's industrial strength [2][8]. - The power semiconductor sector is identified as a leading area for China's semiconductor industry to achieve breakthroughs, supported by a growing number of domestic companies emerging in this field [2][9]. Group 2: Market Opportunities - The global market for GaN power semiconductors is projected to reach approximately $2.9 billion by 2030, with a compound annual growth rate of 42% from 2024 to 2030, highlighting the growth potential in this segment [3][12]. - The Chinese power semiconductor market is expected to reach 105.775 billion yuan in 2024, maintaining its position as the largest consumer market globally, with a significant increase in domestic production rates [11][12]. - The domestic market for low-end power devices has surpassed 80% in localization, with expectations for SiC manufacturers' market share to increase by 10-15 percentage points this year [11][12]. Group 3: Technological Advancements - Innoscience has become the first global company to achieve mass production of 8-inch GaN wafers, with a market share exceeding 42.4% in 2024, showcasing its technological and production capabilities [12]. - Chinese companies have made significant advancements in SiC substrate and epitaxial wafer technologies, with Tianyu Semiconductor leading in market share for carbon silicon epitaxial wafers [11][12]. - The collaboration between international firms and Chinese manufacturers is evolving from technology licensing to joint R&D and supply chain binding, indicating a deeper integration of Chinese firms into the global semiconductor ecosystem [8][9]. Group 4: Strategic Collaborations - STMicroelectronics and Sanan Optoelectronics are collaborating to build a SiC manufacturing facility in Chongqing, with an expected investment of approximately 23 billion yuan, marking a significant step in localizing SiC production [5][6]. - Infineon has established long-term supply agreements with domestic SiC substrate manufacturers to secure competitive materials for its semiconductor production, further integrating Chinese suppliers into its supply chain [6][7]. - Other international companies, such as ROHM and Panasonic, are also forming strategic partnerships with Chinese firms to enhance their product offerings and market reach in the power semiconductor sector [7][8]. Group 5: Future Outlook - The article emphasizes that the rise of China's power semiconductor industry is not coincidental but a result of multiple factors, including strong market demand, strategic opportunities in third-generation semiconductors, and supportive policies [12][13][14]. - The industry is transitioning from a focus on domestic market replacement to actively participating in global competition, with Chinese firms expanding their international presence and capabilities [14][15]. - The future competition in the power semiconductor sector will hinge on technological endurance, ecosystem development, and global operational capabilities, as Chinese companies aim to lead in key areas like SiC and GaN [15][16].