在前期基于超稀释前驱体溶液赋能化学液相沉积法制备aZIF薄膜策略的基础上，研究团队提出了制备 aZIF薄膜的新方法。经过系列实验和仿真，研究团队得到了薄膜沉积的本征速率，并揭示了薄膜沉积均 匀性的关键影响因素。 研究团队利用该化学液相沉积方法，制备了锌/2-甲基咪唑，锌/苯并咪唑、锌/4,5-二氯咪唑和钴/2-甲基 咪唑等多种aZIF薄膜，并对aZIF薄膜作为正型光刻胶和负型光刻胶的图案化性能进行了测试。他们还验 证了aZIF薄膜作为光刻胶在下一代光刻技术中应用的可行性。 中化新网讯 华东理工大学副教授庄黎伟、美国约翰霍普金斯大学教授迈克尔·萨帕希斯领衔的国际合作 团队，提出了一种间歇性旋涂化学液相沉积制备非晶态沸石咪唑酯骨架(aZIF)薄膜的方法，实现了薄膜 沉积速率和厚度的可控，并进行了电子束光刻和超越极紫外光刻验证。相关研究近日发表于《自然-化 学工程》。 据介绍，近年来，aZIF薄膜被用作先进光刻胶。实现aZIF薄膜的大面积、高精度可控制备，对相关领域 的先进光刻工艺具有重要意义。 ...

Core Viewpoint - The article discusses advancements in chip manufacturing technology, particularly focusing on a new method called "Beyond-EUV" (B-EUV) that utilizes a wavelength of 6.5nm to 6.7nm, potentially allowing for resolutions below 5nm, which could replace the current EUV technology [1][2][5]. Group 1: Technology Development - The B-EUV method aims to improve lithography resolution by using shorter wavelengths and higher numerical apertures, with the current industry standard being EUV at 13.5nm [2][4]. - The evolution of lithography has progressed from UV sources to DUV and now to EUV, with significant advancements in the wavelengths used [2][4]. - The B-EUV technology is still in the research phase, with researchers acknowledging that it will take several years to develop even experimental tools [1][5]. Group 2: Challenges and Considerations - The B-EUV light source is not yet mature, and various methods to generate 6.7nm radiation have been explored without a standardized approach [5][6]. - The efficiency of the B-EUV process is hindered by the need for high reflectivity mirrors, which are challenging to produce for shorter wavelengths [5][6]. - The interaction of high-energy photons with traditional photoresist materials poses additional challenges for B-EUV technology [5][6]. Group 3: Innovations in Materials - Researchers at Johns Hopkins University have discovered that metals like zinc can effectively absorb B-EUV light and trigger chemical reactions in photoresist materials, enabling finer pattern etching on semiconductor wafers [13][15]. - The development of a chemical liquid deposition (CLD) technique allows for the creation of thin films that can be used in conjunction with B-EUV technology, enhancing flexibility in material selection [14][15]. - The findings suggest that various metals could be optimized for different wavelengths, opening new avenues for semiconductor manufacturing [14][15]. Group 4: Industry Implications - The advancements in B-EUV technology and materials could significantly impact the semiconductor industry, potentially leading to lower costs and improved production efficiency [12][15]. - Companies like Inversion and xLight are exploring innovative light sources and technologies that could complement or enhance EUV lithography, indicating a competitive landscape in the chip manufacturing sector [10][12].

Core Viewpoint - ASML emphasizes the importance of High NA EUV technology for the future of semiconductor manufacturing, with significant advancements already being reported by major clients like Intel and Samsung [2][4]. Group 1: ASML and High NA EUV Technology - ASML confirmed revenue from a High NA EUV machine, which slightly lowered its gross margin but still resulted in a strong overall gross margin of 53.7% [2]. - Intel reported using High NA EUV equipment to expose over 30,000 wafers in a single quarter, significantly improving its process flow by reducing the number of steps from 40 to below 10 [2]. - Samsung noted a 60% reduction in cycle time for a specific layer using High NA EUV technology, indicating its faster maturity compared to earlier low NA EUV devices [2]. Group 2: Samsung's Investment in Next-Gen Lithography - Samsung is increasing its procurement of High NA EUV lithography machines to enhance its competitive edge in the 2nm GAA process, despite the high costs of these machines [4][5]. - The yield for Samsung's Exynos 2600 chip using this technology was reported at 30%, with a target of at least 70% for financial viability in mass production [5]. - Samsung aims to achieve mass production of 1.4nm nodes by 2027, actively evaluating the use of High NA EUV tools in its manufacturing processes [5]. Group 3: SK Hynix's Adoption of High NA EUV - SK Hynix has assembled the industry's first Twinscan NXE:5200B High NA EUV lithography system, which will initially serve as a development platform for next-gen DRAM technology [8][9]. - The new system is expected to enhance productivity and product performance by enabling more complex patterns on wafers, thus increasing chip density and power efficiency [8]. - SK Hynix plans to simplify existing EUV processes and accelerate the development of next-gen memory products, aiming to solidify its technological leadership in the market [9]. Group 4: Industry Perspectives on High NA EUV - Intel's future procurement of High NA EUV machines will depend on its wafer manufacturing strategy, with no immediate changes expected due to current challenges [12]. - TSMC has reiterated that its next-generation processes do not require High NA EUV systems, indicating a cautious approach towards adopting this technology [12][13]. - Micron plans to introduce EUV technology into DRAM production by 2025, with the timeline for High NA EUV adoption remaining uncertain [14]. Group 5: Future Considerations - Despite the high costs associated with High NA EUV machines, there is a growing recognition of their potential benefits in advanced chip manufacturing [16]. - Emerging transistor architectures like GAAFET and CFET may reduce reliance on advanced lithography tools, shifting focus towards etching technologies [16][17]. - The semiconductor industry is at a crossroads, with companies evaluating the balance between lithography and other critical manufacturing processes as they advance towards more complex chip designs [17].

Core Viewpoint - Investment bank Goldman Sachs believes that Chinese lithography companies are at least 20 years behind their American counterparts in advanced lithography technology, which is a critical bottleneck in high-end chip manufacturing [2][4]. Group 1: Lithography Technology - Lithography is one of the steps in chip manufacturing, involving the transfer of chip designs from photomasks to silicon wafers. Advanced equipment like ASML's EUV and high numerical aperture EUV scanners can transfer smaller circuit patterns, enhancing chip performance [4]. - The report from Goldman Sachs emphasizes that ASML invested $40 billion over 20 years to transition from 65nm lithography to below 3nm technology, highlighting the significant time and capital required for such advancements [5]. Group 2: Current Industry Status - Leading chip manufacturers like Taiwan's TSMC are currently mass-producing 3nm chips and are accelerating the production of 2nm products, while Chinese lithography equipment manufacturers are still at the 65nm process stage [5]. - ASML's CEO, Christophe Fouquet, stated that due to the inability to obtain the most advanced EUV lithography equipment, Chinese companies lag behind industry giants like Intel, TSMC, and Samsung Electronics by approximately 10 to 15 years [5]. Group 3: Export Controls and International Relations - The U.S. government is pressuring ASML not to provide maintenance services for advanced DUV systems sold to China, in line with current sanctions against the Chinese semiconductor industry. However, the Dutch government has not agreed to these U.S. requests [6]. - ASML aims to retain control over its equipment to prevent sensitive information leaks, as allowing Chinese companies to take over maintenance could compromise this information [6].

Core Viewpoint - The article highlights significant advancements in the domestic photolithography material industry, particularly in EUV and KrF/ArF photoresists, which have historically relied on imports. Recent developments indicate a shift towards self-sufficiency and innovation in this critical sector [2][3][4]. Group 1: Technological Advancements - Tsinghua University's research team has developed a new type of EUV photoresist based on poly-telomer, significantly improving EUV absorption efficiency and meeting stringent requirements for ideal photoresists, providing new solutions for global EUV lithography technology [3]. - The first domestic 100-ton semiconductor KrF photoresist resin production line has been established by Aiyishikong, with plans to gradually expand production capacity to 200-300 tons annually over the next five years [4]. - Hangzhou Hanya Microelectronics has invested 10.15 million yuan to build a new high-end photoresist material production line, achieving initial acceptance for 2.62 tons of high-end photoresist materials [5]. Group 2: Market Developments - Several companies, including Taihe Technology and Jingrui Electric Materials, have reported small-scale sales of their photoresist products, indicating a growing market presence [6]. - Xiamen Hengkang New Materials Technology Co., Ltd. has successfully passed the IPO review, which will enable it to raise 1.007 billion yuan for projects related to advanced materials for integrated circuits, including 500 tons of KrF/ArF photoresists [7][10]. Group 3: Industry Growth Projections - According to Frost & Sullivan, the domestic market for lithography materials is expected to grow to 31.92 billion yuan by 2028, with a compound annual growth rate (CAGR) of 21.2% [16]. - In 2024, Hengkang New Materials is projected to achieve a sales scale of 23.24 million yuan for SOC, with an expected market share exceeding 10% [17]. Group 4: Financial Performance - Hengkang New Materials reported revenues of approximately 322 million yuan, 368 million yuan, and 548 million yuan for the years 2022, 2023, and 2024, respectively, with a notable increase in sales from self-produced products [20]. - The company's self-produced product sales accounted for 63.77% of its main business revenue in 2024, reflecting a significant shift towards domestic production [22].

Core Viewpoint - The company, United Chemical (301209.SZ), reported a revenue of 269 million yuan for the first half of 2025, reflecting a year-on-year growth of 4.15%, and a net profit attributable to shareholders of 33.76 million yuan, which is a 21.62% increase compared to the previous year [1] Group 1: Financial Performance - The company achieved a revenue of 269 million yuan in the first half of 2025, marking a 4.15% increase year-on-year [1] - The net profit attributable to shareholders reached 33.76 million yuan, representing a year-on-year growth of 21.62% [1] Group 2: Product Offerings - The company's wholly-owned subsidiary, Gangjing Optics, offers three categories of optical products: high-end, mid-range, and low-end [1] - High-end optical systems, used in KrF and i-line lithography machines, can achieve a resolution of 110nm, with deliveries expected to start in Q4 2025 [1] - Mid-range optical systems, designed for packaging projection lithography and direct-write lithography machines, feature a large field of view (>120mm x 120mm) to meet advanced packaging needs, with deliveries anticipated in Q1 2026 [1] - Low-end optical systems, utilized in photovoltaic projection lithography machines, have a resolution of 5μm and can support an exposure capacity of 8000 wafers per hour, with 20 sets already shipped in small batches [1]

Core Viewpoint - The article discusses the historical context and current status of Planar (KB-TEM), a Belarusian semiconductor equipment manufacturer, highlighting its significance in the semiconductor industry and the challenges it faces in a competitive landscape. Group 1: Historical Background - The Soviet Union made significant contributions to semiconductor technology, including the development of contact lithography machines, but lagged behind Western advancements [7][10]. - Planar, established in 1963, became a key player in the Soviet semiconductor industry, focusing on lithography equipment and precision instruments [4][5]. - After the dissolution of the Soviet Union, Planar transitioned to a market-oriented operation while maintaining its technological heritage [4][5]. Group 2: Technological Development - Planar's core advantage lies in its low-cost, high-reliability semiconductor manufacturing equipment, which is widely used in research institutions in Russia and Belarus [5]. - The company has developed competitive technologies in contact and proximity lithography, although it has not kept pace with advancements made by companies like ASML and Nikon [5][10]. - Planar's laser direct-write lithography machines are utilized for research and small-scale chip production, providing an alternative to traditional lithography methods [14]. Group 3: Market Position and Challenges - Planar's lithography equipment is considered one of the few "advanced" options available to countries in the CIS region, despite being outdated compared to global standards [10][14]. - The company faces increasing competition as geopolitical dynamics shift, with both China and Russia striving for independent semiconductor manufacturing capabilities [14][19]. - Planar's efforts to market its products, such as participating in trade shows, have not yet translated into a strong competitive position against more established players like V-Technology [19].

Core Insights - The report addresses key issues regarding the types and principles of core components in lithography machines, the market potential, ASML's industry collaboration model, and the current status and recommendations for domestic lithography machine components [1]. Investment Logic - Lithography machines are essential for chip manufacturing, directly influencing the miniaturization of chips. Key performance indicators include resolution, depth of focus, overlay accuracy, and yield. The global lithography machine market is projected to reach $29.37 billion by 2025, with specific segments such as illumination and optics, light sources, and stages having estimated market sizes of $4.78 billion, $2.86 billion, and $2.15 billion respectively [2]. - The EUV lithography machine market is expected to reach $9.6 billion by 2025, with its core components also showing significant market potential [2]. ASML's Success Factors - ASML's success is attributed to technological innovation and industry collaboration, with key partners including Zeiss, Cymer, Gigaphoton, and TRUMPF. The company has a global supply chain that enhances its competitive edge [3]. Core Components and Market Barriers - The core components of lithography machines, such as light sources, optics, and stages, represent significant barriers to entry in the industry. The complexity of manufacturing these components contributes to the competitive landscape [2][3]. - The report emphasizes the importance of domestic supply chains in China, particularly in light sources, optics, and stages, which are expected to benefit from government support [3]. Key Indicators of Lithography Machines - The report outlines critical indicators for lithography machines, including resolution, overlay accuracy, yield, and depth of focus. The resolution is determined by the Rayleigh formula, and advancements in technology are necessary to improve these metrics [11][14][36]. - The depth of focus is crucial for accommodating wafer surface irregularities, and improvements in immersion lithography technology have enhanced both resolution and depth of focus [34]. Core Component Analysis - The report details the main components of lithography machines, including light sources, illumination systems, optics, and stages. The collaboration among these components is essential for achieving high imaging quality [42][46]. - The light source is identified as a key factor influencing resolution, with various types of light sources being utilized over the years, including mercury lamps and excimer lasers [52][55]. Conclusion - The lithography machine industry is characterized by high technical barriers and significant market potential, particularly in the context of domestic supply chain development in China. The focus on core components and technological advancements will be critical for future growth and competitiveness in the semiconductor manufacturing sector [3][42].

Summary of Key Points from the Conference Call Industry Overview - The conference call focuses on the **high-end optical equipment industry**, specifically the **lithography machine sector** which is crucial for semiconductor manufacturing [1][2]. Core Insights and Arguments - **Resolution Factors**: The resolution of lithography machines is influenced by wavelength, numerical aperture (NA), and process factors. EUV lithography machines utilize a wavelength of 13.5 nm, requiring reflective optics, which presents significant R&D challenges [1][2]. - **Illumination System**: Key metrics for the illumination system include uniformity (within 1%) and off-axis illumination, which enhances resolution by filtering out fundamental frequency light [1][9]. - **Optical System Costs**: The cost of the optical system in DUV lithography machines accounts for approximately 50% of the total machine cost, with this proportion likely higher in EUV machines due to increased complexity [1][16]. - **Machine Pricing**: The price of lithography machines escalates significantly from i-line to DUV to EUV, with EUV machines costing hundreds of millions of dollars [1][16]. - **Process Node Applications**: DUV machines can achieve process nodes down to 7 nm and even 5 nm with advanced techniques, while EUV machines are primarily used for nodes below 10 nm, including 7 nm, 5 nm, 4 nm, 3 nm, and potentially 2 nm in the future [1][15]. Additional Important Content - **Material Requirements**: DUV and EUV technologies have stringent material requirements due to the scarcity of materials that can transmit short wavelengths. EUV systems rely entirely on reflective optics [1][7]. - **Domestic Capabilities**: Domestic manufacturers have made significant progress in optical processing capabilities, reaching levels comparable to foreign manufacturers, although high-end lens processing still largely depends on state-owned enterprises [1][19]. - **Emerging Technologies**: The LDI (Laser Direct Imaging) lithography machines are gaining traction for advanced packaging applications, offering lower costs but requiring multiple laser heads for simultaneous exposure due to smaller exposure areas [1][22]. - **System Design and Collaboration**: Domestic companies are developing complete system design capabilities but still engage in collaborative efforts to leverage specialized expertise across different firms [1][23]. Technical Challenges - **Optical Component Precision**: The design and manufacturing of optical components, particularly lenses, require nanometer-level precision, presenting significant technical challenges throughout the entire process from design to assembly [1][10][14]. - **Maintenance and Lifespan**: Different lithography machine models have varying lifespans for consumable parts, with components needing replacement every three to five years [1][21]. This summary encapsulates the critical aspects of the conference call, highlighting the complexities and advancements within the lithography machine industry, as well as the competitive landscape and domestic capabilities.

Core Viewpoint - Photolithography is a crucial component of semiconductor manufacturing technology, serving as the starting process for each mask layer. The importance of photolithography lies not only in the demand for mask layers but also in its role in determining the limiting factors for the next technology node [1][9]. Group 1: Photolithography Process - The basic flow of photolithography includes spin coating photoresist, pre-baking, exposure, and development. The prerequisite for device photolithography is the design and manufacturing of the mask [3][26]. - Photolithography technology can be divided into mask-based and maskless lithography. Maskless lithography is currently limited by production efficiency and photolithographic precision, making it unsuitable for large-scale semiconductor manufacturing [3][26]. - The production of photomasks involves three main stages: CAM layout processing, photolithography, and inspection. The mask patterns are typically generated directly on blank mask substrates using direct-write lithography [41][42]. Group 2: Market Trends and Projections - In 2024, the combined market size for wafer exposure equipment, photolithography processing equipment, and mask manufacturing equipment is projected to be approximately $29.367 billion. With the introduction of 2nm processes, the demand for EUV lithography is expected to increase, with related equipment projected to reach $31.274 billion by 2025 [7]. - The server, data center, and storage market is expected to grow at a compound annual growth rate (CAGR) of 9% from 2025 to 2030, driven by the explosive growth of AI, big data, and cloud computing applications. The total semiconductor sales scale is anticipated to exceed $1 trillion [7]. Group 3: Differences in Logic and Memory Chip Lithography - Logic chip metal interconnect layers are more complex, while memory chips (DRAM and NAND) have core storage arrays composed of highly regular line/space structures. The line width and spacing in memory chips are typically pushed to their limits and are very uniform [2][17]. - In DRAM, the word lines and bit lines are designed with the minimum possible line width to achieve maximum capacitance and minimal area occupancy. The challenges in pitch differ between logic circuits and storage arrays [2][17]. Group 4: Equipment and Technology - The imaging system of photolithography machines is critical to semiconductor photolithography technology, with lenses determining the resolution and imaging quality. DUV lenses typically use fluoride materials to ensure low absorption and high laser damage thresholds [6]. - The light source is a key factor determining the wavelength of photolithography machines. For wavelengths above 365nm, high-pressure mercury lamps are commonly used, while KrF and ArF lasers are used for shorter wavelengths [5][6]. Group 5: Advanced Lithography Techniques - Phase shift masks (PSM) introduce phase modulation elements in the light regions of the mask to enhance imaging contrast through interference. PSM can significantly improve resolution by nearly doubling it under the same numerical aperture/wavelength conditions [43][44]. - Attenuated PSMs allow a small portion of light to pass through the opaque regions, enhancing imaging contrast while maintaining a high degree of light absorption [44]. Group 6: Challenges in Lithography - The complexity of logic devices increases the difficulty of interconnecting devices in very small areas, necessitating multiple photolithography steps. Critical layers in logic devices require new processes to ensure performance and yield [24][30]. - The introduction of new technology nodes typically requires new equipment and materials, which are developed in tandem with new processes to produce higher-performance devices [30].