Core Viewpoint - Tesla's CEO Elon Musk announced plans to build a large-scale chip factory, driven by concerns over chip shortages and geopolitical factors, aiming to surpass TSMC's production capacity [2][3] Group 1: Reasons for Building the Chip Factory - Geopolitical concerns are a significant factor, as Musk has expressed worries about the concentration of semiconductor production in Taiwan [3] - Tesla is considered a "second-tier customer" by TSMC, resulting in less support and production flexibility compared to first-tier clients like Apple [3] - The anticipated growth in AI chip demand necessitates the establishment of a TeraFab, which would exceed TSMC's Gigafab capacity of over 100,000 wafers per month [2] Group 2: Potential Benefits of the New Factory - The new factory would allow Tesla to customize key design and manufacturing processes, enhancing vertical integration and maximizing output efficiency [4] - There is speculation about a potential joint venture between Tesla and Intel to establish a new foundry, as Tesla may consider significant investments in Intel [4] Group 3: Challenges and Market Reactions - Analysts question whether Tesla can successfully adopt a system product company + IDM model, which even Apple has hesitated to fully embrace [5] - Some industry observers express skepticism about Musk's ability to replicate his success in automotive and aerospace manufacturing within the semiconductor sector [5]

如果您希望可以时常见面，欢迎标星收藏哦~ 来源 ：内容来自半导体芯闻综合 。 对于外界讨论记忆体是否走出以往循环、进入长期荣景，旺宏董事长吴敏求(附图)表示，目前难以 下定论，确实可见AI发展使大型原厂在产能配置上出现变化，带动部分业者营运转佳，但整体市 况可维持多久仍难预测。现阶段可以确定的是价格已有上涨，涨价与某种程度的供需不平衡相关， 不过「缺货」是否真实、缺口多大，目前难以断言。 他指出，数据中心从以CPU为主转向GPU，运算效能明显提升，各家云端服务供应商（CSP）启动 数据中心改造，带来从零到有的扩张动能。要评估这波热度能撑多久，需待主要CSP业者完成高效 能数据中心建置后，再观察是否仍有持续性投入。 存储芯片，正迎来前所未有的繁荣时期 由于英伟达和 OpenAI等公司的人工智能业务，向来以波动性著称的存储芯片行业正在进入一个长 期繁荣期。 以韩国三星电子、SK海力士以及美国美光科技为首的存储芯片制造商，正享受着对用于训练和运 行人工智能模型的各种产品的需求激增。 研究公司 TrendForce 估计，DRAM（一种主要的存储芯片）明年将带来比 2023 年周期低谷时期 多四倍的行业总收入，达到创 ...

Core Insights - The race to build data centers for achieving Artificial General Intelligence (AGI) is accelerating, outpacing manufacturing capacity, leading to significant shortages in DRAM and storage devices [2][3] - The delivery time for enterprise-grade hard drives has extended to two years, forcing companies to turn to QLC NAND flash SSDs to avoid backlogs [2] - The demand for QLC NAND flash is causing shortages, with North American and Chinese cloud service providers competing for supplies, potentially driving up global SSD prices [2][3] Summary by Sections - **AGI and Data Center Investment** - Companies are heavily investing in data centers to support AGI, resulting in a rapid increase in demand for memory and storage solutions [2] - **Current Market Conditions** - DRAM prices have more than doubled in recent months, and enterprise-grade hard drive delivery times have reached 24 months [2] - The shift towards QLC NAND flash SSDs is a response to the long delivery times of traditional storage solutions [2] - **Future Projections** - By early 2027, QLC NAND is expected to surpass TLC in market share, indicating a significant shift in storage technology [3] - NAND flash manufacturers are experiencing unprecedented demand, with some QLC production capacities already booked until 2026 [2][3] - **Impact on Consumers and Companies** - The current shortages are benefiting manufacturers as they sell capacity to AI customers willing to pay high prices, while ordinary consumers face electronic product shortages [3]

Core Viewpoint - The article discusses the evolution and advancements in NAND flash memory technology, particularly focusing on 3D NAND and its implications for data storage density and efficiency in various applications, including artificial intelligence and data centers [2][10]. Group 1: NAND Flash Memory Evolution - NAND flash memory has transformed data storage and retrieval since its introduction in the late 1980s, becoming essential in devices from smartphones to data centers [2]. - The shift from 2D to 3D NAND technology has allowed semiconductor companies to overcome limitations in traditional memory size reduction, leading to increased storage density [2][10]. - The industry is now focusing on enhancing storage unit density (measured in Gb/mm²) while reducing the cost per bit, with commercial NAND flash reaching up to four bits per cell [2][10]. Group 2: Technological Innovations - A significant advancement is the transition from floating gate transistors to charge trap cells, which improves read/write performance and allows for higher storage density due to smaller manufacturing sizes [3][10]. - The GAA (Gate-All-Around) architecture is being applied in 3D NAND, allowing for vertical stacking of storage units and efficient addressing through horizontal word lines [5][10]. - Future developments aim to achieve over 1000 layers in 3D NAND by 2030, with current chips already exceeding 300 layers, presenting challenges in maintaining uniformity and increasing manufacturing complexity [10][12]. Group 3: Addressing Challenges - The reduction of z-axis spacing between storage layers is crucial for lowering costs while increasing storage capacity, with current spacing around 40 nanometers [15][31]. - Techniques such as integrating air gaps between adjacent word lines are being explored to mitigate cell interference and improve performance [17][22]. - The introduction of charge trap layer separation is being tested to enhance the storage window and prevent charge migration, which could lead to better data retention and performance [26][29]. Group 4: Future Directions - The semiconductor industry is actively researching innovative architectures to maintain advancements in storage density beyond 2030, including horizontal arrangements of conductive channels and trench architectures [32]. - The demand for higher storage capacities is driven by applications in cloud computing and artificial intelligence, pushing the industry towards achieving 100 Gb/mm² storage density [32].

Core Viewpoint - ROHM has announced its mid-term business plan for fiscal years 2026 to 2028, setting ambitious financial targets for fiscal year 2028, including sales exceeding 500 billion yen, an operating profit margin over 20%, and a return on equity (ROE) exceeding 9% [2] Group 1: Growth Strategy - The company aims to focus on growth in the automotive sector, particularly in power and analog circuits, while also strengthening its industrial and consumer electronics businesses to create a balanced product portfolio [2] - ROHM plans to significantly expand its silicon carbide (SiC) power device business while phasing out unprofitable operations [2] - The sales target for the automotive sector is set to reach 275 billion yen, accounting for 55% of total sales, with an emphasis on AI server industrial equipment [2] Group 2: LSI and Power Device Business - The LSI business aims for sales exceeding 110 billion yen and an operating profit margin over 22%, focusing on high-profit and high-growth areas through R&D investment [3] - The power device business targets sales of over 215 billion yen and an operating profit margin exceeding 23%, with a focus on making the SiC business a profit driver [5] Group 3: Market Expansion and Product Development - ROHM has delivered products to 16 automotive manufacturers, expecting to increase inverter deliveries to approximately 3 million units by fiscal year 2028, with a customer base projected to triple [6] - The company is expanding into plug-in hybrid electric vehicles (PHEV) and hybrid electric vehicles (HEV) while enhancing competitiveness through the launch of fifth-generation products [6] Group 4: Manufacturing and Cost Optimization - ROHM plans to improve its substrate business and advance SiC crystal substrate manufacturing processes, primarily managed by its German subsidiary SiCrystal [6] - The company aims to achieve nearly complete in-house production of epitaxial wafers to reduce costs and improve yield, with a focus on transitioning to 8-inch wafers for better quality [7] Group 5: Future Sales Goals - The company has set a target of achieving sales of 30 billion yen for AI server solutions by fiscal year 2030, aiming for over 110 billion yen in sales and an operating profit margin exceeding 22% for general-purpose and other businesses by fiscal year 2028 [7] Group 6: Corporate Restructuring - ROHM announced a restructuring plan to consolidate its four domestic manufacturing subsidiaries and Shiga factory into two companies, focusing on front-end and back-end processing, set to begin operations on April 1, 2026 [8]

Core Viewpoint - TSMC is experiencing a surge in demand for AI chips, leading to increased capital expenditures and expansion plans for new facilities to meet this demand [2][4][5]. Group 1: TSMC's Supply Chain Management Forum - TSMC will hold its 2025 Supply Chain Management Forum on the 13th, which is considered a significant event in the semiconductor supply chain, with attendance from major international equipment and materials companies [2][3]. - The forum will feature TSMC's leadership, including Chairman Wei Zhejia and other senior executives, and is expected to attract hundreds of suppliers and partners [3]. Group 2: Capital Expenditure and Expansion Plans - TSMC's capital expenditure for next year is projected to increase to between $45 billion and $50 billion, with plans to build 12 new facilities in Taiwan, including advanced process wafer fabs and advanced packaging plants [2][4][5]. - Approximately 70% of the capital expenditure will be allocated to advanced processes, while 10% to 20% will be for special processes and the remaining for advanced packaging and testing [4]. Group 3: AI Chip Demand and Market Dynamics - The demand for AI chips is described as extremely strong, with TSMC's 3nm process facing tight supply and the newly launched 2nm process also in high demand [4][5]. - Despite a slowdown in TSMC's revenue growth in October, industry leaders remain optimistic about AI-driven growth, with significant investments planned by major tech companies [6][7]. Group 4: Industry Sentiment and Future Outlook - Industry executives, including NVIDIA's CEO Jensen Huang, express confidence in the ongoing demand for AI chips, indicating that the market is still growing month by month [6][7]. - TSMC's stock has risen approximately 37% since the beginning of the year, reflecting positive market sentiment despite recent concerns about high valuations in the semiconductor sector [6].

Core Insights - The storage module industry is experiencing a significant shortage driven by AI demand, with NAND Flash prices increasing by approximately 50% this month, and DRAM prices for DDR4 and DDR5 also rising [2] - NAND Flash applications in AI have surged recently, leading to a shift in supplier capacity towards AI applications, with expectations of a substantial market opportunity due to HDD shortages [2] - The major DRAM manufacturers have no plans to increase DDR4 production, anticipating a gradual exit from the DDR4 market by 2026, which limits supply and drives prices up [2] Group 1: Company Performance - In Q3, the company reported revenues of 4.109 billion, a quarter-over-quarter increase of 27.2% and a year-over-year increase of 63.2%, with a net profit of 1.511 billion, reflecting a quarter-over-quarter increase of 259% and a year-over-year increase of 334% [3] - The company is primarily focused on industrial control, with DDR4 still dominating product shipments, while expecting an increase in DDR5 shipments as customers transition [2] Group 2: Market Trends - SanDisk predicts that the NAND Flash supply shortage will persist until at least the end of 2026, with indications that the tight supply situation may extend into 2027 [4] - The demand for NAND Flash is driven by long-term trends, capital investments, and industry transitions, with data centers expected to become the largest segment for NAND Flash by 2026 [4] - SanDisk's wafer fabs are operating at full capacity to replenish significantly reduced inventories, and the company is optimistic about the long-term growth of the data center market [4][6] Group 3: Future Outlook - SanDisk's revenue guidance for Q2 FY2026 is projected between 2.55 billion and 2.65 billion, exceeding market expectations, with adjusted earnings per share forecasted between 3.00 and 3.40 [6] - The company reported a 26% quarter-over-quarter growth in data center revenue, with ongoing collaborations with major data center clients [7] - BiCS8 technology is expected to dominate production by the end of FY2026, currently accounting for 15% of total shipments [7]

Core Insights - Samsung Group has publicly disclosed the achievements of its Future Technology Development Program, which has been ongoing for 12 years, emphasizing a technology-focused management approach [3][4] - The program aims to support the entire cycle of technology commercialization, resulting in significant outcomes, including the nurturing of companies listed on the KOSDAQ [3][4] Group 1: Program Overview - The Future Technology Development Program, initiated in 2013, is the first private sector-led basic science research support project in South Korea, focusing on foundational science, materials technology, ICT, and interdisciplinary research [4][5] - Samsung has invested 15 trillion KRW (approximately 11.4 billion USD) over 12 years, selecting 880 research projects, with a total investment of 11.419 trillion KRW (approximately 8.6 billion USD) in research funding [4][5] Group 2: Researcher Support and Outcomes - More than 16,000 researchers from 91 institutions have received support from the program, including around 1,200 professors and over 14,000 STEM graduate students [4][5] - The program provides end-to-end development solutions, offering phased expert guidance and support extending to industrial technology exchange and technology entrepreneurship [5] Group 3: Notable Achievements - 65 research projects have led to the establishment of startups, with Protina being a notable example, which received five years of research support and recently went public on KOSDAQ [5][6] - The program has facilitated the development of various technologies, including AI sleep coaching integrated into Galaxy Watch8 and semiconductor technology addressing data center bottlenecks [6] Group 4: Future Directions and Collaborations - The newly established Future Science and Technology Forum featured 64 presentations on foundational science and engineering projects, highlighting significant research advancements [6][7] - Samsung aims to enhance support for researchers to focus on their studies and contribute to sustainable development, with ongoing initiatives like the Samsung Youth SW·AI Academy and C-Lab [7]

如果您希望可以时常见面，欢迎标星收藏哦~ 来源 ：内容来自 BBC 。 周五，日本软银集团（SoftBank Group）的股价再次开始下滑，此前人工智能（AI）相关股票普 遍暴跌，原因是投资者再次对该板块过高的估值产生警惕。 该 集 团 广 泛 投 资 于 基 础 设 施 、 半 导 体 和 应 用 公 司 等 领 域 的 人 工 智 能 公 司 ， 其 股 价 收 盘 下 跌 了 6.87%，从盘中早些时候的跌幅中有所收复。 在此之前，软银股价在前一个交易日上涨了近3%，但周三曾暴跌10%，创下自四月以来的最差单 日 表 现 。 本 周 ， 其 市 值 蒸 发 了 近 500 亿 美 元 ， 并 录 得 自 2020 年 3 月 以 来 最 差 的 周 跌 幅 ， 跌 幅 近 20%。 在人工智能相关股票面临新一轮压力后，软银集团的股价下跌。软银持有英国半导体设计公司Arm Holdings的控股权，该公司的芯片为全球移动和人工智能处理器提供动力。在纳斯达克上市的Arm 股价隔夜下跌了1.21%。 另外，彭博社最近援引知情人士的消息报道称，该集团曾在今年早些时候考虑收购美国芯片制造商 美满电子科技（Mar ...

Core Insights - The article emphasizes the rapid development of embedded non-volatile memory (eNVM) as a foundational technology in the AI era, highlighting its critical role in various applications from microcontrollers (MCUs) to automotive controllers and security components [2][4]. Market Overview and Growth - Emerging embedded non-volatile memories, including MRAM, RRAM/ReRAM, and PCM, are entering a broader adoption phase, particularly in microcontrollers, connectivity, and edge AI devices, with strong momentum in automotive and industrial markets. Yole Group projects that by 2030, the embedded emerging memory market will exceed $3 billion, driven by increased availability in mainstream process nodes and strong demand for NVM in areas where eFlash is no longer suitable [4][8]. Technological Advancements - Embedded flash (eFlash) remains foundational, but limitations in size scaling at advanced nodes have pushed MRAM, ReRAM, and embedded PCM to the forefront. Foundries and integrated device manufacturers (IDMs) are expanding embedded options from 28/22 nm planar CMOS to 10–12 nm platforms, including FinFET. TSMC has established high-volume production for MRAM/ReRAM and is preparing for 12nm FinFET ReRAM/MRAM beyond 2025. Other companies like Samsung, GlobalFoundries, UMC, and SMIC are accelerating the adoption of embedded MRAM/ReRAM/PCM in general MCUs and high-performance automotive designs [6][7]. Drivers, Challenges, and Use Cases - The automotive sector remains a focal point for emerging embedded NVM, with significant increases in applications for safety ICs and industrial microcontrollers expected by 2025. ReRAM, MRAM, and PCM each play distinct roles, with ReRAM gaining attention in high-volume categories, while MRAM and PCM are attractive for speed and durability applications. Challenges include integrating eNVM at advanced logic nodes, balancing durability and data retention, achieving automotive-grade reliability certification, and maintaining cost-effective density as embedded code and AI parameters grow. However, trends are positive, with increasing availability of PDK/IP and rising capacity addressing these issues [8][9]. Future Outlook - By 2030, embedded NVM is expected to support more on-chip AI functionalities and practical in-memory/near-memory computing modules, with broader applications in edge neuromorphic-inspired accelerators. Yole's forecasts indicate that the embedded emerging memory sector is now a primary growth engine, with ReRAM leading in high-volume microcontrollers and analog ICs, while MRAM and embedded PCM solidify their positions in performance-critical niche markets. As edge data grows, the role of eNVM is evolving from mere storage to becoming an integral part of computing architectures, redefining efficiency and making embedded memory more central to device intelligence than ever before [9].