（文章来源：每日经济新闻） 集成电路ETF（159546）跟踪的是集成电路指数（932087），该指数从市场中选取涉及半导体设计、晶 圆制造、封装测试以及相关材料设备等业务的上市公司证券作为指数样本，以全面反映中国集成电路产 业链核心企业的整体表现。该指数具有突出的技术引领性和产业成长性特征，能够有效表征集成电路行 业的发展态势。 国泰海通指出，半导体产业链正加速向封装技术领域倾斜，先进封装与键合技术成为突破"卡脖子"环节 的关键突破口，被视为产业下一阶段增长引擎。混合键合、无助焊剂键合等技术成熟推动3D封装、异 构集成向高密度、高可靠性方向突破，纳米银烧结等新型材料加速落地解决传统键合材料热膨胀系数匹 配难题。5G、AI、汽车电子等领域对芯片散热效率、信号传输速度提出更高要求，在摩尔定律趋缓背 景下，先进封装成为提升算力性价比的重要路径。国内企业正从中低端市场切入HBM、功率半导体等 高端赛道，但关键设备与材料仍依赖ASM Pacific等国际厂商。预计到2027年全球先进封装市场规模将 达650亿美元，混合键合技术增速最快，2026年先进封装有望超越传统封装成为主流技术。 ...

公众号记得加星标⭐️，第一时间看推送不会错过。 蔡先生表示："我们认为所谓的混合-混合键合是实现从微凸点到混合键合过渡的一种可能方式。在这 种方式中，两片晶圆采用混合键合，从而获得互连线更短、信号延迟更低的优势，而下一层级则采用 微凸点技术。" 蔡指出，随着晶圆厚度进一步减薄，翘曲问题日益严重。"HBM公司开始考虑晶圆间键合，因为减薄 后，晶圆级的处理比芯片级的处理要容易得多。" 来 源 ： 内容 编译自 semiengineering 。 高带宽内存（HBM）作为人工智能的关键推动因素，处于多项技术发展的前沿，但它也是最难制造 的模块之一。领先的HBM器件制造商和代工厂必须同时应对多层芯片堆叠、芯片翘曲以及产品生命 周期从两年缩短至一年等诸多挑战。 但或许最严峻的挑战来自于硅通孔（TSV）和微凸点尺寸及间距的不断缩小，它们的良率取决于每一 代高带宽存储器缺陷的快速检出。随着数千个互连线必须完美加工，缺陷数量也随之激增。这些趋势 正将检测工具推向极限。 布鲁克公司X射线部门全球应用和销售经理Alex Tokar表示："小凸起才是问题所在，而不是大凸 起。X射线成像可以检查凸起以及凸起下方的金属化层是否存在缺陷 ...

Core Viewpoint - Adeia has filed two patent infringement lawsuits against AMD, claiming that AMD's chips utilize its patented hybrid bonding technology, which is central to AMD's 3D V-Cache design, enhancing gaming performance and cache density [2][3]. Group 1: Patent Infringement Lawsuit - The lawsuits involve ten patents, including seven related to hybrid bonding technology and three concerning advanced logic and memory manufacturing processes [2]. - Adeia's claims arise after failed licensing negotiations over several years, with the lawsuits announced on November 3 [2]. - AMD has not commented on the lawsuits as of now [2]. Group 2: Hybrid Bonding Technology - Hybrid bonding technology is crucial for AMD's Ryzen X3D processors, allowing for a near-monolithic connection between chips, which enables stacking of 64MB SRAM without exceeding thermal or electrical limits [2]. - This technology utilizes TSMC's SoIC process series, which facilitates ultra-high-density 3D integration [2]. Group 3: Implications of the Lawsuit - The outcome of the lawsuit could redefine the boundaries between proprietary bonding methods and specific implementations by foundries, impacting the ownership of connection aspects in 3D chip designs [4]. - If Adeia's claims withstand early procedural challenges, the case may influence the valuation of all hybrid bonding processors in future licensing transactions [4]. - Historically, injunctions in such patent cases are rarely granted, leading to expectations that AMD's products will not be immediately affected [3].

Group 1 - HBM chips have become the standard for AI computing, with their core advantage stemming from the vertical stacking structure of DRAM chips [2] - The main chip stacking technology currently is Thermal Compression Bonding (TCB), which faces limitations as the number of stacked layers exceeds 16, affecting yield and signal integrity [2][4] - Hybrid bonding technology emerges as a revolutionary solution, allowing for direct copper-to-copper bonding between DRAM chips, enhancing interconnect density without the limitations of bumps [2][4] Group 2 - The semiconductor industry is shifting towards small chips and 3D integrated chip (3DIC) technology due to the slowdown of Moore's Law, making packaging a key factor in driving AI chip performance [4][6] - According to Yole Group, the evolution of chip bonding technology is moving towards hybrid bonding as the ultimate goal, with a projected market growth for hybrid bonding equipment to reach $397 million by 2030 [6][9] Group 3 - Hybrid bonding technology offers significant advantages over TCB, including a 15x increase in interconnect density, 11.9x speed improvement, and over 100x energy efficiency performance [9][10] - Despite the higher infrastructure costs, the cost per interconnect is reduced by 10 times with hybrid bonding, and it can lower the HBM stack temperature by 20% [9][10] Group 4 - Currently, no company has successfully achieved mass production of hybrid bonding equipment due to challenges such as existing TCB machines being sufficient, high precision requirements, and the high cost of hybrid bonding machines [12][21] - Predictions indicate that by 2030, the cumulative installation of hybrid bonding equipment will range from 960 to 2000 units, reflecting a 7% increase from previous forecasts [12][14] Group 5 - Major players in the hybrid bonding equipment market include Besi, which has seen significant revenue growth and strategic partnerships, particularly with Applied Materials [21][22] - South Korean companies like Hanmi Semiconductor and Hanwha Semitech are key competitors in the hybrid bonding space, with Hanmi holding a dominant market share in TCB machines [23][24] Group 6 - LG Electronics is entering the hybrid bonding equipment market through a national project aimed at developing HBM hybrid bonding machines, indicating a strategic focus on semiconductor equipment [25][26] - Samsung is also developing its own hybrid bonding machines through its subsidiary SEMES, aiming to reduce reliance on external suppliers [27] Group 7 - In China, companies like Tuojing Technology and Qinghe Crystal Semiconductor are making strides in hybrid bonding equipment, with Qinghe announcing the launch of the world's first dual-mode hybrid bonding equipment [29] - Besi predicts that the hybrid bonding market will reach €1.2 billion by 2030, driven by the transition from TCB to hybrid bonding technology [29]

Core Viewpoint - The storage market is undergoing significant changes, with HBM technology becoming a strategic focal point for leading companies like SK Hynix, Samsung, and Micron, as they compete for future revenue growth [3][4][18]. Group 1: DRAM Market Dynamics - SK Hynix has maintained its position as the global leader in the DRAM market, increasing its market share from 36.9% in Q1 to 39.5% in Q2, while Samsung's share decreased from 34.4% to 33.3% [2]. - In terms of revenue, SK Hynix reported $12.226 billion in Q2, surpassing Samsung's $10.3 billion by over $1.9 billion, marking a significant shift in the competitive landscape [2]. - The ongoing transition in the DRAM market is characterized by a focus on HBM technology, which is expected to drive future growth [3][10]. Group 2: HBM Technology and Customization - HBM has evolved into a critical component for high-performance AI chips, with SK Hynix and Micron entering the final testing phase for the sixth generation of HBM (HBM4), set to supply NVIDIA [3][4]. - SK Hynix is positioned as the primary supplier for NVIDIA's HBM4, with expectations to finalize supply contracts by September [4]. - Customization of HBM products is becoming increasingly important, with SK Hynix already engaging with major clients like NVIDIA and Microsoft to develop tailored solutions [5][6]. Group 3: DDR4 Market Resurgence - The unexpected resurgence of DDR4 memory prices is attributed to supply shortages following announcements from major manufacturers to halt production by the end of 2025 [7][8]. - Current market prices for DDR4 have surged, with the average spot price for DDR4 16Gb reaching $16, significantly higher than DDR5 prices [7]. - Both Samsung and SK Hynix are reconsidering their plans to phase out DDR4, extending production timelines due to the profitability of older chips [8]. Group 4: Equipment and Technological Advancements - The introduction of High NA EUV equipment by SK Hynix is set to enhance DRAM production capabilities, allowing for finer circuit patterns and increased integration [13][14]. - The competition in the semiconductor equipment sector is intensifying, particularly with the development of hybrid bonding technology, which promises to improve performance and efficiency in HBM production [14][15]. - Companies like BESI and Applied Materials are leading the charge in hybrid bonding technology, which is expected to reshape the semiconductor equipment landscape [15][16]. Group 5: Future Outlook - The competition in the DRAM market is expected to escalate, particularly as companies adapt to the evolving demands of the AI era [18]. - The integration of various technologies and collaborative efforts among industry players will be crucial for success in the increasingly complex semiconductor ecosystem [18].

Group 1 - SK Hynix is supplying its HBM4 12-Hi stacked memory to NVIDIA at a price approximately 70% higher than the fifth generation HBM (HBM3E) [1] - SK Hynix announced significant technological changes in HBM4, including increased IO counts and improved designs to enhance bandwidth, while also aiming to reflect cost increases in pricing strategies [1] - The current bump bonding method used in HBM limits the vertical spacing between chips, making it difficult to reduce below 40μm, which hinders memory capacity and bandwidth improvements [1] Group 2 - The hybrid bonding technology is expected to be used for next-generation HBM products, allowing for higher interconnect density, smaller pitch, and lower energy consumption, with pitches reaching 10μm or less [1] - HBM4 is set to utilize direct-to-chip liquid cooling (D2C) technology for direct liquid cooling of the chips, as per a roadmap published by KAIST [1] - Yak Technology supplies precursors to major companies including TSMC, SK Hynix, and SMIC [2] - Taiji Industry provides semiconductor backend services to SK Hynix and its affiliates [3]

Group 1 - LG Electronics has initiated the development of hybrid bonding equipment, aiming for mass production by 2028. This technology is crucial for constructing 16+ layer stacked HBM memory, utilizing copper-copper bonding without bumps to reduce the spacing between DRAM dies and achieve higher stacking with lower heat generation [1] - Heilongjiang Province has implemented a subsidy policy for manufacturing innovation centers, providing 30% reimbursement on research equipment purchases, with a maximum annual subsidy of 3 million yuan at the provincial level and a one-time national award of 10 million yuan to accelerate the commercialization of R&D results [1] - The SQX-3 rocket's sub-stage methane tank successfully completed a low-temperature static test, marking a significant achievement for the company in the aerospace sector [1] Group 2 - The first humanoid robot sports science joint laboratory has been established in Beijing Yizhuang, in collaboration with Li Ning Group, indicating a significant advancement in the field of humanoid robotics [1] - Panasonic has postponed the full operation of its new electric vehicle battery factory in the U.S. due to sluggish sales reported by its main customer, Tesla. The factory, located in Kansas, was initially set to begin operations by the end of the 2026 fiscal year, reflecting a broader slowdown in the global electric vehicle market [1]

Core Viewpoint - The article discusses the significant transformation in data centers from a "compute-centric" approach to a "bandwidth-driven" model, highlighting the rise of High Bandwidth Memory (HBM) as a crucial infrastructure for large model computations [1][2]. Group 1: HBM Market Dynamics - HBM has evolved from being a standard component in high-performance AI chips to a strategic focal point in the semiconductor industry, with major players like Samsung, SK Hynix, and Micron viewing it as a key driver for future revenue growth [2][4]. - SK Hynix has established a dominant position in the HBM market, holding approximately 50% market share, with a staggering 70% share in the latest HBM3E products [6][10]. - Samsung is also actively pursuing custom HBM supply agreements with various clients, indicating a competitive landscape among these semiconductor giants [6][10]. Group 2: Customization Trends - Customization of HBM is becoming a necessity, driven by cloud giants seeking tailored AI chips, with SK Hynix already engaging with major clients like NVIDIA and Microsoft for custom HBM solutions [4][5]. - The integration of base die functions into logic chips allows for greater flexibility and control over HBM core chip stacks, optimizing performance, power consumption, and area [7][9]. Group 3: Hybrid Bonding Technology - Hybrid bonding is emerging as a critical technology for future HBM development, addressing challenges posed by traditional soldering techniques as stacking layers increase [12][18]. - Major companies, including Samsung and SK Hynix, are exploring hybrid bonding for their next-generation HBM products, which could lead to significant advancements in performance and efficiency [13][18]. Group 4: Future HBM Innovations - The article outlines the anticipated evolution of HBM technology from HBM4 to HBM8, detailing improvements in bandwidth, capacity, and power efficiency, with HBM8 expected to achieve a bandwidth of 64 TB/s and a capacity of up to 240 GB per module [20][21][27]. - Key innovations include the introduction of 3D integration technologies, advanced cooling methods, and AI-driven design optimizations, which are set to enhance the overall performance and efficiency of HBM systems [29][30]. Group 5: Competitive Landscape - The competition among DRAM manufacturers and bonding equipment suppliers is intensifying, with companies needing to collaborate across various domains to succeed in the evolving HBM market [33]. - The future of HBM technology will likely be shaped by the ability of companies to integrate diverse processes and resources, with the race for dominance in the post-AI era just beginning [33].

Core Viewpoint - The article highlights the significant advancements in semiconductor advanced packaging technology, particularly the introduction of domestic D2W hybrid bonding equipment, marking a breakthrough for Chinese companies in the high-end packaging sector [1][4]. Market Overview - The hybrid bonding technology transitions from solder bump to copper-copper direct bonding, achieving nano-level precision interconnection and addressing the bottlenecks of traditional micro-bump technology in high-density packaging. The global hybrid bonding equipment market was valued at $320 million in 2020 and is projected to reach $230 million for CoW (Chip-on-Wafer) and $510 million for WoW (Wafer-on-Wafer) by 2027, with CAGRs of 69% and 16% respectively, indicating strong growth potential in this field [2]. Supplier Landscape - The hybrid bonding equipment market has been dominated by international giants such as EVG and Besi. The latest Yole report includes the D2W hybrid bonding equipment from ACCURACY, the first Chinese D2W supplier to be featured, and also includes Piotech's W2W equipment set to be released in 2024. This reflects a technological breakthrough for China's semiconductor equipment industry, showcasing its capability to compete with international manufacturers [4]. Application Growth - The demand for high-density packaging is increasing due to the explosion of AI computing power, leading to a rising penetration of hybrid bonding in high-end packaging scenarios such as HBM (High Bandwidth Memory) and 3D ICs. For instance, the penetration rate of hybrid bonding in the HBM market is expected to surge from 1% in 2025 to 36% by 2028 [6]. International Players' Strategies - Major international players are actively positioning themselves in the hybrid bonding space: - Samsung signed a hybrid bonding patent licensing agreement with Yangtze Memory Technologies in February 2025, planning to mass-produce the next generation V10 NAND flash using W2W hybrid bonding technology [8]. - Micron established a dedicated HBM business unit in April 2025 to accelerate its HBM4 mass production plans, with expectations to launch HBM4 products using hybrid bonding technology in 2026 [8]. - SK Hynix plans to incorporate hybrid bonding technology into its HBM4 production process by 2026 [8]. - TSMC and Intel are also advancing their hybrid bonding capabilities, with TSMC supporting HBM4 integration and Intel achieving breakthroughs in CoW technology [8]. Industry Implications - The technological breakthroughs by Chinese packaging equipment companies provide diversified equipment options for the global semiconductor packaging industry, promoting a more open competitive landscape in high-density interconnection technology [9].

Core Viewpoint - The article discusses the increasing importance of High Bandwidth Memory (HBM) in the AI chip sector, highlighting its advantages and the competitive landscape among major players like SK Hynix, Samsung, and Micron. Group 1: Importance of HBM - HBM is crucial in the era of generative AI as memory bandwidth often limits model training rather than computational power [4] - The memory demand in Transformer models grows quadratically with sequence length, making bandwidth a significant bottleneck [4] - HBM offers superior performance, with bandwidth reaching several terabytes per second, over 20 times faster than conventional DDR memory [5] Group 2: HBM Technology Development - Each generation of AI chip upgrades relies on HBM iterations for performance enhancement, with NVIDIA GPUs showing significant capacity increases [9] - HBM capacity has increased by 50% from H100 to H200 and B200 to B300, with HBM4 doubling the channel count from 8 to 16 [9] - The HBM market is expected to grow rapidly, with a projected CAGR of 50% from 2024 to 2028 [10] Group 3: Market Leaders and Competitive Landscape - SK Hynix currently leads the HBM market with over 60% market share, primarily supplying high-end HBM to NVIDIA [14] - The MR-MUF technology used by SK Hynix offers better thermal performance and higher yield compared to Samsung's TC-NCF technology [15][18] - Samsung faces challenges in HBM production due to issues with its front-end technology and lower yield rates [20][22] Group 4: Future Trends and Innovations - The shift from planar DRAM processes to advanced FinFET logic nodes in HBM4 is expected to enhance performance and energy efficiency [23] - Samsung plans to manufacture HBM4 base chips using its 4nm process, while SK Hynix and Micron will outsource to TSMC [25] - Hybrid bonding technology is emerging as a disruptive innovation in HBM, potentially changing the competitive landscape [32] Group 5: Chinese Market Developments - Chinese companies like ChangXin Memory Technologies (CXMT) and Yangtze Memory Technologies (YMTC) are making strides in HBM technology, although they currently lag behind global leaders [42] - CXMT aims to start mass production of HBM2 by late 2024, with plans for HBM3 and HBM3E in subsequent years [44] - The ability of Chinese firms to adopt hybrid bonding technology could significantly accelerate their HBM development [48][49]